Publications

• Communication dans un congrès

Toward a better understanding of the interfacial growth mechanism of dairy fouling at a stainless steel surface : a multiscale approach

M. Jimenez, Guillaume Delaplace, N. Nuns, S. Bellayer, D. Deresmes, G. Ronse, G. Alogaili, M. Traisnel

27th Conference of European Colloid and Interface Society, ECIS 2013, 2013, Sofia, Bulgaria. ⟨hal-00878881⟩

• Communication dans un congrès

Etude de la cinétique des espèces principales induites par un plasma N2/O2 dans un réacteur de dépôt de couches minces organosiliciés

Adriana Annusova, Corinne Foissac, Pavel Veis, Philippe Supiot

Journée UGéPE Nord Pas-de-Calais, 2013, Villeneuve d'Ascq, France. ⟨hal-00878891⟩

• Communication dans un congrès

Dielectric polarization 1/f noise in 0D MOS transistors and ion-sensitive field-effect transistors

N. Clement, K. Nishiguchi, A. Fujiwara, D. Vuillaume

22nd International Conference on Noise and Fluctuations, ICNF 2013, 2013, Montpellier, France. ⟨hal-00820950⟩

• Communication dans un congrès

News from the non-polar GaN(10-10) surface : hidden surface states and intrinsic versus extrinsic Fermi-level pinning

L. Lymperakis, P.H. Weidlich, H. Eisele, M. Schnedler, J.P. Nys, B. Grandidier, D. Stievenard, R.E. Dunin-Borkowski, J. Neugebauer, P. Ebert

European Materials Research Society Spring Meeting, E-MRS Spring 2013, Symposium L - Group III nitrides, 2013, Strasbourg, France. ⟨hal-00819689⟩

• Article dans une revue

BCB cap packaging of MEMS switches integrated with 100-m MMIC wafer

S. Seok, J. Kim, M. Fryziel, N. Rolland, B. Grandchamp, W. Simon, R. Baggen

IEEE Transactions on Components, Packaging and Manufacturing Technology, 2013, 3, pp.1799-1803. ⟨10.1109/TCPMT.2013.2278713⟩. ⟨hal-00903757⟩

• Article dans une revue

The Faraday threshold in small cylinders and the sidewall non-ideality

William R. Batson, Farzam Zoueshtiagh, Raviprasad Narayanan

In this work we investigate, by way of experiments and theory, the Faraday instability threshold in cylinders at low frequencies. This implies large wavelengths where effects from mode discretization cannot be ignored. Careful selection of the working fluids has resulted in an immiscible interface…

Journal of Fluid Mechanics, 2013, 729, pp.496-523. ⟨10.1017/jfm.2013.324⟩. ⟨hal-00871919⟩

• Article dans une revue

Delay time calculation for dual-wavelength quantum cascade lasers

A. Hamadou, S. Lamari, Jean-Luc Thobel

Journal of Applied Physics, 2013, 114, 203102, 7 p. ⟨10.1063/1.4829914⟩. ⟨hal-00912357⟩

• Article dans une revue

Radio-frequency and low noise characteristics of SOI technology on plastic for flexible electronics

A. Lecavelier Des Etangs-Levallois, Marie Lesecq, Francois Danneville, Y. Tagro, Sylvie Lepilliet, Virginie Hoel, David Troadec, D. Gloria, C. Raynaud, Emmanuel Dubois

In this work, we report on the HF performance and noise characteristics of 65 nm SOI-CMOS technology transferred onto plastic films. After transfer-bonding onto a thin flexible substrate, RF-SOI-MOSFETs are shown to feature high unity-current-gain cutoff and maximum oscillation frequencies f T /f…

Solid-State Electronics, 2013, 90, pp.73-78. ⟨10.1016/j.sse.2013.02.049⟩. ⟨hal-00914203⟩

• Article dans une revue

Guided-wave electro-optic characterization of BaTiO3 thin films using the prism coupling technique

Floriane Leroy, Anthony Rousseau, Sandrine Payan, El Hadj Dogheche, David Jenkins, Didier Decoster, Mario Maglione

Ferroelectric BaTiO3 (BTO) thin films are grown by RF sputtering onto an indium tin oxide bottom electrode on a MgO single-crystal substrate. We have studied here the optical properties by the prism coupling technique. We report the ordinary and extraordinary refractive indices of the films, the…

Optics Letters, 2013, 38 (7), pp.1037-1039. ⟨10.1364/OL.38.001037⟩. ⟨hal-00804978⟩

• Article dans une revue

Effect of surface passivation by SiN/SiO2 of AlGaN/GaN high-electron mobility transistors on Si substrate by deep level transient spectroscopy method

M. Gassoumi, H. Mosbahi, M.A. Zaidi, Christophe Gaquière, H. Maaref

Semiconductors, 2013, 47, pp.1002-1005. ⟨hal-00806585⟩