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Communication dans un congrès

Strain relaxation and thermal effects on the drain conductance in AlGaN/GaN HEMT

A. Telia, A. Bellakhdar, L. Semra, A. Soltani

In this work the effects of technological and electrical parameters of Al m Ga 1-m N/GaN High Electron Mobility Transistors (HEMT) on the output conductance "gd" was studied in the first part. In the second part, the effect on gd of thermal and self heating in the device was analyzed.…

2nd Saudi International Electronics, Communications and Photonics Conference, SIECPC 2013, 2013, Riyadh, Saudi Arabia. 6 p., ⟨10.1109/SIECPC.2013.6550780⟩. ⟨hal-00877787⟩

Article dans une revue

Acoustic techniques for concrete evaluation: improvements, comparisons and consistency

Vincent Garnier, Bogdan Piwakowski, Odile Abraham, Géraldine Villain, Cédric Payan, Jean François Chaix

In civil engineering, the testing of structures allows a large number of chemical, mechanical and micro–macro structural parameters to be determined. Within the scope of ultrasonic Non-Destructive Testing (NDT), which is often used to evaluate concrete, many different techniques can be employed to…

Construction and Building Materials, 2013, 43, pp.598-613. ⟨10.1016/j.conbuildmat.2013.01.035⟩. ⟨hal-00813152⟩

Article dans une revue

Temperature and damping effects on the frequency dependence of electrostatic force microscopy force gradients

R. Arinero, J. Trasobares, Pascal Girard, M. Ramonda, N. Clément

In this paper we demonstrate that depending on the surrounding ambient, which may be manifested by different damping conditions, a "bump" in frequency response of Electric Force Microscope (EFM) cantilevers may be observed, either in electrical amplitude or phase signals of AC gradients.…

Journal of Applied Physics, 2013, 114 (21), pp.214315. ⟨10.1063/1.4843835⟩. ⟨hal-00916277⟩

Communication dans un congrès

Design and simulation of Cd1-xZnxTe thin films epitaxied on CdTe substrate for photovoltaic devices applications

A. Aissat, M. Fathi, Jean-Pierre Vilcot

This work concerns the study and the simulation of a structure containing II-VI semiconductor for photovoltaic application. We studied the influence of the zinc concentration on the various parameters of the alloy Cd1-xZnxTe epitaxied on a CdTe substrate. Indeed, the insertion of zinc increases the…

TerraGreen 13 International Conference 2013 - Advancements in Renewable Energy and Clean Environment, 2013, Beirut, Lebanon. pp.86-93, ⟨10.1016/j.egypro.2013.07.011⟩. ⟨hal-00877760⟩

Communication dans un congrès

Blind primary user identification in MIMO cognitive networks

A. Ghosh, W. Hamouda, Iyad Dayoub

Early detection of primary users presence is one of the most important tasks for cognitive communication. Also, in cognitive settings cognitive nodes may receive signals from primary users and from other cognitive users simultaneously. For such scenario, we propose primary user signal detection…

IEEE International Conference on Communications, IEEE ICC 2013, 2013, Budapest, Hungary. pp.4546-4550, ⟨10.1109/ICC.2013.6655285⟩. ⟨hal-00921193⟩

Communication dans un congrès

Theoretical and experimental study of multilayer piezo-magnetic structure based surface acoustic wave devices for high sensitivity magnetic sensor

Huan Zhou, Abdelkrim Talbi, Nicolas Tiercelin, Olivier Bou Matar

This study addresses the experimental and theoretical investigations of piezomagnetic acoustic waves propagating along the surface of a piezoelectric substrate on which a magnetostrictive thin film is deposited. The main objective of this work is to design high sensitivity surface acoustic wave…

IEEE International Ultrasonics Symposium, IUS 2013, Jul 2013, Prague, Czech Republic. paper IUS3-C-2, 212-215, ⟨10.1109/ULTSYM.2013.0055⟩. ⟨hal-00944036⟩

Communication dans un congrès

A 285 GHz sub-harmonic injection locked oscillator in 65nm CMOS technology

J. Moron Guerra, A. Siligaris, Jean-Francois Lampin, Francois Danneville, P. Vincent

A 285 GHz Sub Harmonic Injection Locked Oscillator (SHILO) is presented using a standard 65nm CMOS process. The architecture of this oscillator is based on the differential LC tank with push-push but adapted to obtain a third harmonic oscillation. The output power is -19 dBm at 285 GHz for a dc…

61st IEEE MTT-S International Microwave Symposium, IMS 2013, 2013, Seattle, WA, United States. paper WE1F-4, 3 p., ⟨10.1109/MWSYM.2013.6697345⟩. ⟨hal-00944033⟩

Communication dans un congrès

Rotational temperatures in RF plasma of Ar-H2O mixtures at low and moderated pressure

Adriana Annusova, Jaroslav Krištof, Corinne Foissac, Pavel Veis, Philippe Supiot

An Ar-H2O discharge with Ar content from 0 to 95 % at 67 and 266 Pa have been studied by optical emission spectroscopy. The plasma was excited at 27 MHz by a helical cavity with a power set at 30 W. The rotational temperatures of N2(C3Πu) and OH(A2 Σ + ) emitters were determined through spectral…

XXXI International Conference on Phenomena in Ionized Gases, XXXI ICPIG, 2013, Granada, Spain. paper PS1-036, 4 p. ⟨hal-00922590⟩

Communication dans un congrès

Doped semiconductor nanocrystal junctions studied by Kelvin probe and non-contact atomic force microscopy

Lukasz Borowik, Thuat Nguyen-Tran, D. Deresmes, Heinrich Diesinger, Pere Roca I Cabarrocas, Thierry Melin

Semiconductor junctions are the basis of electronic and photovoltaic devices. Here, we investigate junctions formed from highly doped (ND~10^20-10^21 cm-3) hydrogen-passivated silicon nanocrystals (NCs) in the 2-50nm size range, using non-contact atomic force microscopy coupled to Kelvin probe…

Materials Research Society Fall Meeting, MRS Fall 2013, Symposium LL : Advances in Scanning Probe Microscopy, 2013, Boston, MA, United States. ⟨hal-00944018⟩

Communication dans un congrès

High frequency noise characterisation of graphene FET Device

D. Mele, S. Fregonese, Sylvie Lepilliet, E. Pichonat, Gilles Dambrine, H. Happy

RF GFET devices have been processed on SiC wafer using Al2O3 as a gate oxide. These devices have been characterised with DC, S parameter and high frequency noise measurement (NF50). The noise parameters have been extracted in order to evaluate the graphene material for RF applications. This GFET…

61st IEEE MTT-S International Microwave Symposium, IMS 2013, 2013, Seattle, WA, United States. paper TU3C-1, 4 p., ⟨10.1109/MWSYM.2013.6697561⟩. ⟨hal-00944030⟩