Publications

• Article dans une revue

Fast slot characterization using laser ultrasonics and mode conversion

F. Faëse, Frédéric Jenot, Mohammadi Ouaftouh, Marc Duquennoy, Mohamed Ourak

Measurement Science and Technology, 2013, 24, 095602, 7 p. ⟨10.1088/0957-0233/24/9/095602⟩. ⟨hal-00877664⟩

• Article dans une revue

Lysozyme detection on aptamer functionalized graphene-coated SPR interfaces

P. Subramanian, A. Lesniewski, I. Kaminska, Alexis Vlandas, A. Vasilescu, J. Niedziolka-Jonsson, E. Pichonat, H. Happy, Rabah Boukherroub, Sabine Szunerits

Biosensors and Bioelectronics, 2013, 50, pp.239-243. ⟨10.1016/j.bios.2013.06.026⟩. ⟨hal-00877645⟩

• Communication dans un congrès

A new photomechanical molecular switch based on a linear π-conjugated system

S. Lenfant, D. Demeter, M. Oçafrain, P. Blanchard, David Guérin, Christophe Krzeminski, F. Cleri, J. Roncali, D. Vuillaume

12th European Conference on Molecular Electronics, ECME 2013, 2013, London, United Kingdom. ⟨hal-00878937⟩

• Communication dans un congrès

Functionalized gold nanoparticles with electropolymerizable conjugated systems for organic transistors behaving as biological synapse

A. Yassin, M. Oçafrain, David Guérin, S. Lenfant, D. Vuillaume, J. Roncali, P. Blanchard

Matériaux et Nanostructures π-Conjugués, MNPC 13, 2013, Annecy, France. ⟨hal-00878944⟩

• Autre publication scientifique

Advances in Historical Studies [Editor in Chief 2/4]

Raffaele Pisano

2013. ⟨hal-04511051⟩

• Proceedings/Recueil des communications

Notes on the historical conceptual streams for mathematics and physics teaching

Raffaele Pisano

Proceedings of the Lithuanian Mathematical Society, Ser. A, Serie A (54), Vilnius university, pp.vii-xvii, 2013, 0132-2818. ⟨hal-04513852⟩

• Communication dans un congrès

AlN/SI interfaces properties revealed by broadband characterization of coplanar waveguides

Adrien Cutivet, Alain Agboton, Philippe Altuntas, François Lecourt, Marie Lesecq, Nicolas Defrance, Yvon Cordier, Magdalena Chmielowska, Stephanie Rennesson, Julien Camus, Keltouma Aït Aïssa, Laurent Le Brizoual, Mohamed Abdou Djouadi, Jean-Claude de Jaeger, François Boone, Hassan Maher

This paper focuses on the electrical investigation of various AlN/Si interfaces by means of broadband characterization and modeling of CPW (coplanar waveguide) for frequencies up to 50 GHz. These electric measurements are performed under different biases and temperatures in order to investigate the…

37th Workshop on Compound Semiconductor Devices and Integrated Circuits held in Europe, WOCSDICE 2013, 2013, Warnemünde, Germany. pp.37-38. ⟨hal-00828412⟩

• Article dans une revue

Theoretical and experimental evidence of Fano-like resonances in simple monomode photonic circuits

A. Mouadili, E.H. El Boudouti, A. Soltani, Abdelkrim Talbi, Abdellatif Akjouj, Bahram Djafari-Rouhani

A simple photonic device consisting of two dangling side resonators grafted at two sites on a waveguide is designed in order to obtain sharp resonant states inside the transmission gaps without introducing any defects in the structure. This results from an internal resonance of the structure when…

Journal of Applied Physics, 2013, 113 (16), pp.164101. ⟨10.1063/1.4802695⟩. ⟨hal-00819665⟩

• Article dans une revue

Global transmission and reflection coefficients of the ultrasonic component in porous media : a new approach

Georges Nassar, Amina Medjdoub, N. Saad

The purpose of this paper is to propose a new approach to determining the global ultrasonic transmission and reflection coefficients in a random porous medium. Boundary conditions at the interface of the medium were used to determine local transmission and reflection coefficients. A study of the…

Ultrasonics, 2013, 53, pp.1097-1103. ⟨10.1016/j.ultras.2013.02.004⟩. ⟨hal-00823965⟩

• Communication dans un congrès

Electron delay analysis and image charge effect in AlGaN/GaN HEMT on silicon substrate

Alain Agboton, N. Defrance, Philippe Altuntas, Vanessa Avramovic, Adrien Cutivet, Rezki Ouhachi, Jean-Claude de Jaeger, Samira Bouzid-Driad, Maher, Hassan, M. Renvoise, Peter Frijlink

A delay time analysis is carried out for SiN-passivated AlGaN/GaN High Electron Mobility Transistors (HEMTs) on silicon substrate featuring gate length of 90 nm. The influence of high parasitics in the access pads is considered using de-embedding procedure from the measured S parameters. From the…

43rd Conference on European Solid-State Device Research, Sep 2013, Bucharest, Romania. ⟨hal-03285110⟩