Publications

Affichage de 7821 à 7830 sur 16471


  • Communication dans un congrès

Caractérisation et étude du temps de transit des électrons dans une structure HEMT à hétérojonction InAlN/GaN

Alain Agboton

16èmes Journées Nationales du Réseau Doctoral en Micro-Nanoélectronique, JNRDM 2013, 2013, Grenoble, France. 4 p. ⟨hal-00957791⟩

  • Communication dans un congrès

Phase change memory for neuromorphic systems and applications

M. Suri, O. Bichler, D. Querlioz, V. Sousa, L. Perniola, D. Vuillaume, C. Gamrat, B. de Salvo

12th European-Phase Change and Ovonics Symposium, E-PCOS 2013, 2013, Berlin, Germany. ⟨hal-00957793⟩

  • Article dans une revue

Characteristics of the surface microstructures in thick InGaN layers on GaN

Y. El Gmili, G. Orsal, K. Pantzas, A. Ahaitouf, T. Moudakir, S. Gautier, G. Patriarche, David Troadec, Jean-Paul Salvestrini, A. Ougazzaden

This paper focuses on a comparative study of optical, morphological, microstructural and microcompositional properties of typical InGaN samples which exhibit V-defects but also two additional surface defects features, referred to as inclusion#1 (Ic1) and inclusion#2 (Ic2). HR-XRD, AFM, SEM, STEM…

Optical Materials Express, 2013, 3, pp.1111-1118. ⟨10.1364/OME.3.001111⟩. ⟨hal-00815384⟩

  • Communication dans un congrès

Extraordinary room temperature THz heterodyne detector: the self-switching nanodiode

J. Torres, P. Nouvel, A. Penot, L. Varani, P. Sangare, B. Grimbert, M. Faucher, Guillaume Ducournau, Christophe Gaquière, I. Iniguez-De-La-Torre, J. Mateos, T. Gonzalez

18th International Conference on Electron Dynamics in Semiconductors, Optoelectronics and Nanostructure, 2013, Matsue, Japan. ⟨hal-01926264⟩

  • Communication dans un congrès

InAlAs/InGaAa HEMTs on polyimide flexible substrate with high cut-off frequencies

J.S. Shi, Nicolas Wichmann, Yannick Roelens, S. Bollaert

Journées Nationales Technologies Emergentes en Micro-Nanofabrication, JNTE 2013, 2013, Evian, France. ⟨hal-00813609⟩

  • Autre publication scientifique

Vers une électronique terahertz : contribution à la technologie des transistors III-V

Mohammed Zaknoune

2013. ⟨hal-00813614⟩

  • Communication dans un congrès

Laser ultrasonics and mode conversion for flaw depth gauging

Frédéric Faëse, Frédéric Jenot, Mohammadi Ouaftouh, Marc Duquennoy, Mohamed Ourak

Compared to earliest non destructive testing and evaluation methods based on transducers, laser ultrasonics shows specific advantages. It is a non-contact method combining a high spatial resolution and a large bandwidth, allowing high temperature and/or geometrically complex materials testing. In…

13th International Symposium on Nondestructive Characterization of Materials, NDCM-XIII, 2013, Le Mans, France. paper 15509, 9 p. ⟨hal-00971600⟩

  • Communication dans un congrès

Interferometric scanning microwave microscope for nanotechnology application

N. Clement, Thomas Dargent, H. Tanbakuchi, K. Nishiguchi, R. Sivakumarasamy, F. Wang, A. Fujiwara, D. Ducatteau, Gilles Dambrine, D. Vuillaume, Bernard Legrand, D. Theron

American Physical Society March Meeting, APS March Meeting 2013, 2013, Baltimore, MD, United States. ⟨hal-00811777⟩