Publications

Affichage de 7831 à 7840 sur 16175


  • Communication dans un congrès

Terahertz negative index metamaterials by means of stacked subwavelength hole arrays

N. Soltani, Guillaume Ducournau, Eric Lheurette, Jean-Francois Lampin, D. Lippens

7th International Congress on Advanced Electromagnetic Materials in Microwaves and Optics, Metamaterials 2013, 2013, Bordeaux, France. Poster session II, 3 p., published by Metamorphose-VI, CD-ISBN 978-952-67611-5-2. ⟨hal-00881305⟩

  • Communication dans un congrès

Surface acoustic wave scattering matrix evaluation using COMSOL Multiphysics®: application to surface acoustic wave transmission through 2D surface phononic crystal

S. Yankin, Abdelkrim Talbi, Vladimir Preobrazhensky, Philippe Pernod, Olivier Bou Matar, A. Pavlova

COMSOL Conference 2013, 2013, Rotterdam, Netherlands. 3 p. ⟨hal-00881296⟩

  • Communication dans un congrès

Bending effect on frequency performance of InAlAs/InGaAs HEMT transferred on flexible substrate

S. Bollaert, J.S. Shi, Nicolas Wichmann, Yannick Roelens

71st Annual Device Research Conference, DRC 2013, 2013, Notre Dame, IN, United States. paper III-31, 111-112, ⟨10.1109/DRC.2013.6633818⟩. ⟨hal-00904681⟩

  • Communication dans un congrès

Confocal Raman spectroscopy of graphene on hexagonal boron nitride

Sylvain Engels, F. Forster, A. Molina-Sanchez, A. Epping, K. Watanabe, T. Taniguchi, L. Wirtz, C. Stampfer

XXVIIth International Winterschool on Electronic Properties of Novel Materials, IWEPNM 2013, 2013, Kirchberg, Austria. ⟨hal-00903354⟩

  • Communication dans un congrès

THz wireless communications at high data rate using plasma-wave field-effect transistors for detection: State of the art and perspectives

S. Blin, L. Tohme, P. Nouvel, A. Pénarier, D. Coquillat, W. Knap, Guillaume Ducournau, Jean-Francois Lampin, S. Bollaert, S. Hisatake, T. Nagatsuma

GDRI – THz, 2013, Montpellier, France. ⟨hal-01929183⟩

  • Communication dans un congrès

Strain relaxation and thermal effects on the drain conductance in AlGaN/GaN HEMT

A. Telia, A. Bellakhdar, L. Semra, A. Soltani

In this work the effects of technological and electrical parameters of Al m Ga 1-m N/GaN High Electron Mobility Transistors (HEMT) on the output conductance "gd" was studied in the first part. In the second part, the effect on gd of thermal and self heating in the device was analyzed.…

2nd Saudi International Electronics, Communications and Photonics Conference, SIECPC 2013, 2013, Riyadh, Saudi Arabia. 6 p., ⟨10.1109/SIECPC.2013.6550780⟩. ⟨hal-00877787⟩