Publications

• COUV

Electrostatic force microscopy and Kelvin force microscopy as a probe of the electrostatic and electronic properties of carbon nanotubes

Thierry Melin, Mariusz Zdrojek, David Brunel

This chapter addresses recent experimental studies on carbon nanotubes and nanotube devices using electrical techniques derived from atomic force microscopy. Electrostatic force microscopy (EFM), Kelvin force microscope (KFM), and their variants are introduced. We show how EFM-related techniques…

B. Bhushan. Scanning probe microscopy in nanoscience and nanotechnology, Springer, chapitre 4, 89-128, 2010, ⟨10.1007/978-3-642-03535-7_4⟩. ⟨hal-00575864⟩

• COMM

Millimeter-wave frequency tunable microstrip antenna on ultraflexible PDMS substrate

S. Hage-Ali, Nicolas Tiercelin, P. Coquet, R. Sauleau, Vladimir Preobrazhensky, Philippe Pernod

IEEE International Symposium on Antennas and Propagation and CNC/USNC/URSI Radio Science Meeting, APS-URSI 2010, 2010, Toronto, Canada. pp.1-4, ⟨10.1109/APS.2010.5561288⟩. ⟨hal-00549963⟩

• ART

Coulomb energy determination of a single Si dangling bond

T.H. Nguyen, G. Mahieu, Maxime Berthe, B. Grandidier, C. Delerue, D. Stievenard, P. Ebert

Physical Review Letters, 2010, 105, pp.226404-1-4. ⟨10.1103/PhysRevLett.105.226404⟩. ⟨hal-00549059⟩

• ART

New magnetic micro-actuator design based on PDMS elastomer and MEMS technologies for tactile display

J. Streque, Abdelkrim Talbi, Philippe Pernod, Vladimir Preobrazhensky

IEEE Transactions on Haptics (ToH), 2010, 3, pp.88-97. ⟨10.1109/TOH.2009.61⟩. ⟨hal-00548961⟩

• ART

Atomistic modeling of electron-phonon coupling and transport properties in n-type [110] silicon nanowires

Wenxing Zhang, Christophe Delerue, Yann-Michel Niquet, Guy Allan, Enge Wang

Using a sp3d5s∗ tight-binding model for electrons and a valence force-field model for phonons, we study the transport properties of [110]-oriented silicon nanowires including all electron-phonon interactions. Using a full resolution of the Boltzmann transport equation, the low-field mobility is…

Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2010, 82, pp.115319-1-7. ⟨10.1103/PhysRevB.82.115319⟩. ⟨hal-00549040⟩

• ART

AlGaN/GaN HEMTs on (001) silicon substrate with power density performance of 2.9 W/mm at 10 GHz

J.C. Gerbedoen, A. Soltani, S. Joblot, Jean-Claude de Jaeger, Christophe Gaquière, Y. Cordier, F. Semond

IEEE Transactions on Electron Devices, 2010, 57, pp.1497-1503. ⟨10.1109/TED.2010.2048792⟩. ⟨hal-00549455⟩

• ART

Synchronization sensitivity of block-IFDMA systems

E.P. Simon, D.P. Gaillot, Virginie Degardin

IEEE Transactions on Wireless Communications, 2010, 9, pp.256-267. ⟨10.1109/TWC.2010.01.090173⟩. ⟨hal-00549481⟩

• ART

Enhancement of biosensing performance in a droplet-based bioreactor by in situ microstreaming

O. Ducloux, E. Galopin, Farzam Zoueshtiagh, A. Merlen, V. Thomy

Biomicrofluidics, 2010, 4, pp.011102-1-5. ⟨10.1063/1.3310930⟩. ⟨hal-00549490⟩

• COMM

Effects of the drain width on the electrical behavior of deep defect in AlGaN/GaN/SiC HEMTs

O. Fathallah, M. Gassoumi, S. Saadaoui, B. Grimbert, Christophe Gaquière, H. Maaref

27th International Conference on Microelectronics, MIEL 2010, 2010, pp.479-481, ⟨10.1109/MIEL.2010.5490440⟩. ⟨hal-00550032⟩

• COMM

High transconductance AlGaN/GaN HEMT with thin barrier on Si(111) substrate

F. Lecourt, Y. Douvry, N. Defrance, Virginie Hoel, Jean-Claude de Jaeger, S. Bouzid, M. Renvoise, D. Smith, H. Maher

40th European Solid-State Device Research Conference, ESSDERC 2010, 2010, Spain. pp.281-284, ⟨10.1109/ESSDERC.2010.5618362⟩. ⟨hal-00549999⟩