Publications

Affichage de 41 à 50 sur 15028


  • Article dans une revue

A digital image processing tool for characterizing dendritic trunks

S. Diwakar, Mohand Salah Moussa, Antonella Al Najjar, Sarathy Gopalakrishnan, Kirk Ziegler, Abdelkrim Talbi, Ranga Narayanan, Farzam Zoueshtiagh

Signal, Image and Video Processing, 2024, ⟨10.1007/s11760-024-03070-y⟩. ⟨hal-04525179⟩

  • Article dans une revue

Importing Experimental Results via S2D Model in ADS Tool for Power Amplifier Design

Gaurav Bhargava, Shubhankar Majumdar, Farid Medjdoub

IETE journal of research, 2024, pp.1-8. ⟨10.1080/03772063.2024.2326588⟩. ⟨hal-04500396⟩

  • Communication dans un congrès

A Quantum Annealing Solution to the Job Shop Scheduling Problem with Availability Constraints

Riad Aggoune, Samuel Deleplanque

25ème édition du congrès annuel de la Société Française de Recherche Opérationnelle et d'Aide à la Décision ROADEF 2024, Mar 2024, Amiens, France. ⟨10.1007/978-3-031-37105-928⟩. ⟨hal-04532374⟩

  • Communication dans un congrès

Cross-Layer Architecture design for High-Speed Internet of Things in Healthcare

Namarig Mohemed Taha Abdelrahman Ahmed, El Hadj Dogheche, Amin Babiker, Iyad Dayoub, Ahmed Mohamed Alhassan

COST Action CA19111 NEWFOCUS, Mar 2024, Athena, Greece. ⟨hal-04548804⟩

  • Article dans une revue

Control of microstructure and composition of reactively sputtered vanadium nitride thin films based on hysteresis curves and application to microsupercapacitors

Allan Lebreton, Marie-Paule Besland, Pierre-Yves Jouan, Tatiana Signe, Cédric Mannequin, Mireille Richard-Plouet, Maryline Le Granvalet, Christophe Lethien, Thierry Brousse, Jérémy Barbé

Vanadium nitride (VN) thin films were prepared by reactive DC magnetron sputtering of a vanadium target using nitrogen as reactive gas. The structural, morphological, and compositional evolution of these films is described based on hysteresis diagrams plotting the sputtering power versus nitrogen…

Journal of Vacuum Science & Technology A, 2024, 42 (2), pp.023405. ⟨10.1116/5.0177028⟩. ⟨hal-04423908⟩

  • Article dans une revue

Highlighting the role of 3C–SiC in the performance optimization of (Al,Ga)N‒based High‒Electron mobility transistors

Micka Bah, Daniel Alquier, Marie Lesecq, Nicolas Defrance, Damien Valente, Thi Huong Ngo, Eric Frayssinet, Marc Portail, Jean-Claude de Jaeger, Yvon Cordier

AlN nucleation layer is the key issue for the performance of GaN high frequency telecommunication and power switching systems fabricated after heteroepitaxy on Silicon or Silicon Carbide. In this work, we demonstrate and explain both the low level and the origin of propagation losses in GaN/3C–SiC/…

Materials Science in Semiconductor Processing, 2024, 171, pp.107977. ⟨10.1016/j.mssp.2023.107977⟩. ⟨hal-04378667⟩