Publications

Affichage de 41 à 50 sur 15027


  • Article dans une revue

Borophene Quantum Dots as Novel Peroxidase-Mimicking Nanozyme: A Dual-Mode Assay for the Detection of Oxytetracycline and Tetracycline Antibiotics

Devipriya Gogoi, Chayanika Hazarika, Gayatri Neog, Prosenjit Mridha, Himangsu Bora, Manash Das, Sabine Szunerits, Rabah Boukherroub

ACS Applied Materials & Interfaces, 2024, ⟨10.1021/acsami.3c12108⟩. ⟨hal-04517327⟩

  • Article dans une revue

A digital image processing tool for characterizing dendritic trunks

S. Diwakar, Mohand Salah Moussa, Antonella Al Najjar, Sarathy Gopalakrishnan, Kirk Ziegler, Abdelkrim Talbi, Ranga Narayanan, Farzam Zoueshtiagh

Signal, Image and Video Processing, 2024, ⟨10.1007/s11760-024-03070-y⟩. ⟨hal-04525179⟩

  • Article dans une revue

Importing Experimental Results via S2D Model in ADS Tool for Power Amplifier Design

Gaurav Bhargava, Shubhankar Majumdar, Farid Medjdoub

IETE journal of research, 2024, pp.1-8. ⟨10.1080/03772063.2024.2326588⟩. ⟨hal-04500396⟩

  • Communication dans un congrès

A Quantum Annealing Solution to the Job Shop Scheduling Problem with Availability Constraints

Riad Aggoune, Samuel Deleplanque

25ème édition du congrès annuel de la Société Française de Recherche Opérationnelle et d'Aide à la Décision ROADEF 2024, Mar 2024, Amiens, France. ⟨10.1007/978-3-031-37105-928⟩. ⟨hal-04532374⟩

  • Communication dans un congrès

Cross-Layer Architecture design for High-Speed Internet of Things in Healthcare

Namarig Mohemed Taha Abdelrahman Ahmed, El Hadj Dogheche, Amin Babiker, Iyad Dayoub, Ahmed Mohamed Alhassan

COST Action CA19111 NEWFOCUS, Mar 2024, Athena, Greece. ⟨hal-04548804⟩

  • Article dans une revue

Highlighting the role of 3C–SiC in the performance optimization of (Al,Ga)N‒based High‒Electron mobility transistors

Micka Bah, Daniel Alquier, Marie Lesecq, Nicolas Defrance, Damien Valente, Thi Huong Ngo, Eric Frayssinet, Marc Portail, Jean-Claude de Jaeger, Yvon Cordier

AlN nucleation layer is the key issue for the performance of GaN high frequency telecommunication and power switching systems fabricated after heteroepitaxy on Silicon or Silicon Carbide. In this work, we demonstrate and explain both the low level and the origin of propagation losses in GaN/3C–SiC/…

Materials Science in Semiconductor Processing, 2024, 171, pp.107977. ⟨10.1016/j.mssp.2023.107977⟩. ⟨hal-04378667⟩