Publications

• Communication dans un congrès

Fabrication and characterization of 200-nm self-aligned In0.53Ga0.47As MOSFET

Aurélien Olivier, Nicolas Wichmann, Jiongjong Mo, Albert M.D. Noudeviwa, Yannick Roelens, L. Desplanque, X. Wallart, Francois Danneville, Gilles Dambrine, S. Bollaert, François Martin, O. Desplats, Jérôme Saint-Martin, Minghua Shi, Y. Wang, M-P Chauvat, P. Ruterana, Hassan Maher

In this paper, a 200 nm n-channel inversion-type self-aligned In 0.53 Ga 0.47 As MOSFET with a Al 2 O 3 gate oxide deposited by Atomic Layer Deposition (ALD) is demonstrated. Two ion implantation processes using silicon nitride side-wall are performed for the fabrication of the n-type source and…

22nd IEEE Conference on Indium Phosphide and Related Materials, IPRM'10, May 2010, Takamatsu, Japan. pp.41-43, ⟨10.1109/ICIPRM.2010.5515926⟩. ⟨hal-00549921⟩

• Communication dans un congrès

La formation pratique en nanotechnologie : l'approche mise en place par le GIP CNFM

Laurence Ressier, F. Marchi, H. Sellier, A. Bournel, A. Dazzi, S. Retailleau, F. Bendriaa, Virginie Hoel, H. Happy

8ème Colloque sur l'Enseignement des Technologies et des Sciences de l'Information et des Systèmes, CETSIS 2010, 2010, Grenoble, France. ⟨hal-00574466⟩

• Article dans une revue

Charged impurity scattering and mobility in gated silicon nanowires

M.P. Persson, H. Mera, Y.M. Niquet, C. Delerue, M. Diarra

We study the effects of charged impurity scattering on the electronic transport properties of h110i-oriented Si nanowires in a gate-all-around geometry, where the impurity potential is screened by the gate, gate oxide and conduction band electrons. The electronic structure of the doped nanowires is…

Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2010, 82 (11), pp.115318. ⟨10.1103/PhysRevB.82.115318⟩. ⟨hal-00549048⟩

• Communication dans un congrès

Electronic properties of the Al0.56In0.44Sb/Ga0.5In0.5Sb heterostructure

L. Desplanque, D. Vignaud, S. Godey, E. Cadio, P. Liu, H. Sellier, X. Wallart

22nd IEEE Conference on Indium Phosphide and Related Materials, IPRM'10, 2010, Kagawa, Japan. ⟨hal-00573576⟩

• Communication dans un congrès

Imaging electron transport by scanning gate microscopy

P. Liu, H. Sellier, S. Huant, X. Wallart, L. Desplanque, B. Hackens, F. Martins, V. Bayot

Forum des Microscopies à Sonde Locale, 2010, Mittelwihr, France. ⟨hal-00574035⟩

• Article dans une revue

Further studies on the lithium phosphorus oxynitride solid electrolyte

T. Pichonat, C. Lethien, Nicolas Tiercelin, S. Godey, E. Pichonat, P. Roussel, Marie Colmont, P.A. Rolland

First step in the way to the fabrication of an all-solid microbattery for autonomous wireless sensor node, amorphous thin solid films of lithium phosphorus oxynitride (LiPON) were prepared by radio-frequency sputtering of a mixture target of P₂O₅/Li<…

Materials Chemistry and Physics, 2010, 123, pp.231 - 235. ⟨10.1016/j.matchemphys.2010.04.001⟩. ⟨hal-00514193⟩

• Article dans une revue

Interface structure of silicon nanocrystals embedded in an amorphous silica matrix

R. Soulairol, F. Cleri

Solid State Sciences, 2010, 12, pp.163-171. ⟨10.1016/j.solidstatesciences.2009.05.004⟩. ⟨hal-00549076⟩

• Article dans une revue

Metamaterials-inspired technologies applied to ultra high-frequency filtering structures

Alejandro Borja, Jorge Carbonell, Vicente Boria, Michel Chaubet, Didier Lippens

In this letter, the design and comparative study of metamaterial-inspired bandpass filters operating at G-band (150 GHz) is presented. To this aim, filters based on split ring resonators (SRRs) and complementary SRRs are studied and compared on a scale compliant with MMIC technology. Technological…

Microwave and Optical Technology Letters, 2010, 52 (8), pp.1868-1872. ⟨10.1002/mop.25300⟩. ⟨hal-00548688⟩

• Article dans une revue

Enhanced high data rate communication system using embedded cooperative radar for intelligent transports systems

Yassin El Hillali, C. Tatkeu, P. Deloof, Laila Sakkila, Atika Rivenq, Jean-Michel Rouvaen

Transportation research. Part C, Emerging technologies, 2010, 18, pp.429-439. ⟨10.1016/j.trc.2009.05.013⟩. ⟨hal-00549912⟩

• Article dans une revue

Analysis of deep levels in AlGaN/GaN/Al2O3 heterostructures by CDLTS under a gate pulse

M. Gassoumi, O. Fathallah, Christophe Gaquière, H. Maaref

Physica B: Condensed Matter, 2010, 405, pp.2337-2339. ⟨10.1016/j.physb.2010.02.042⟩. ⟨hal-00549453⟩