Publications

• Communication dans un congrès

[Invited] Nonlinear acoustic imaging of isoechogenic phantoms using wave phase conjugation

L. Krutyansky, Vladimir Preobrazhensky, Philippe Pernod, Olivier Bou Matar

Linear and Nonlinear Acoustic Wave Propagation in Heterogeneous Media : Modern Trends and Applications, 2008, Les Houches, France. ⟨hal-00811712⟩

• Communication dans un congrès

Application of chaotic cavities to localized nonlinearity imaging with time reversal

Olivier Bou Matar, Y. Li, Vladimir Preobrazhensky, Philippe Pernod

IEEE International Ultrasonics Symposium, 2008 IEEE IUS, 2008, Beijing, China. ⟨hal-00811717⟩

• Communication dans un congrès

Correlation between the kink effect, collapse effect and traps in AlGaN/GaN HEMT on sapphire substrate

M. Gassoumi, O. Fathallah, Christophe Gaquière, G. Guillot, H. Maaref

International Conference on Extended Defects in Semiconductors, EDS 2008, 2008, Poitiers, France. ⟨hal-00811736⟩

• Article dans une revue

Molecular-scale electronics

D. Vuillaume

Comptes Rendus. Physique, 2008, 9, pp.78-94. ⟨10.1016/j.crhy.2007.10.014⟩. ⟨hal-00357286⟩

• Article dans une revue

Resistivity and surface states density of n and p type silicon nanowires

Francois Vaurette, J.P. Nys, D. Deresmes, B. Grandidier, D. Stiévenard

Journal of Vacuum Science and Technology, 2008, 26, pp.945-948. ⟨10.1116/1.2908438⟩. ⟨hal-00357381⟩

• Article dans une revue

Tight-binding description of the quasiparticle dispersion of graphite and few-layer graphene

A. Grüneis, Claudio Attaccalite, L. Wirtz, H. Shiozawa, R. Saito, T. Pichler, A. Rubio

A universal set of third–nearest neighbour tight–binding (TB) parameters is presented for calculation of the quasiparticle (QP) dispersion of N stacked sp2 graphene layers (N = 1 . . . ∞) with AB stacking sequence. The QP bands are strongly renormalized by electron–electron interactions which…

Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2008, 78, pp.205425-1-16. ⟨10.1103/PhysRevB.78.205425⟩. ⟨hal-00357778⟩

• Article dans une revue

Band-edge photoluminescence and reflectivity of nonpolar (11-20) and semipolar (11-22) GaN formed by epitaxial lateral overgrowth on sapphire

T. Gühne, Z. Bougrioua, S. Laügt, M. Nemoz, P. Vennegues, B. Vinter, M. Leroux

Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2008, 77, pp.075308-1-10. ⟨10.1103/PhysRevB.77.075308⟩. ⟨hal-00356987⟩

• Communication dans un congrès

Block and convolutional turbo codes over non gaussian multiple access interference ad hoc networks

A. Goalic, Patrick Adde, H. El Ghannudi, Laurent Clavier

4th International Symposium on Image/Video Communications over fixed and mobile networks, ISIVC 2008, 2008, Bilbao, Spain. paper 147, 1-4. ⟨hal-00811199⟩

• Article dans une revue

Characterization of ultrathin SOI film and application to short channel MOSFETs

Xing Tang, N. Reckinger, G. Larrieu, Emmanuel Dubois, D. Flandre, J.P. Raskin, B. Nysten, A.M. Jonas, V. Bayot

In this study, a very dilute solution (NH4OH:H2O2:H2O 1:8:64 mixture) was employed to reduce the thickness of commercially available SOI wafers down to 3 nm. The etch rate is precisely controlled at 0.11 Å s−1 based on the self-limited etching speed of the solution. The thickness uniformity of the…

Nanotechnology, 2008, 19, pp.165703-1-7. ⟨10.1088/0957-4484/19/16/165703⟩. ⟨hal-00356972⟩

• Article dans une revue

Integration of PtSi in p-type MOSFETs using a sacrificial low-temperature germanidation process

Nicolas Breil, Emmanuel Dubois, Aomar Halimaoui, Arnaud Pouydebasque, Guilhem Larrieu, Adam Laszcz, J. Ratajcak, Thomas Skotnicki

In this letter, an original selective etching method of Pt with respect to PtSi using a sacrificial low-temperature germanidation process is used for the integration of valence band edge contacts in p-type MOSFET devices. After silicidation annealing, the excess of Pt due to incomplete reaction…

IEEE Electron Device Letters, 2008, 29, pp.152-154. ⟨10.1109/LED.2007.914090⟩. ⟨hal-00356971⟩