Sébastien Aroulanda, Olivier Patard, Philippe Altuntas, Nicolas Michel, Jorge Pereira, Cédric Lacam, Piero Gamarra, Sylvain L. Delage, N. Defrance, Jean-Claude de Jaeger, Christophe Gaquière

This paper reports on atomic layer etching of several III-N materials such as GaN, AlN, AlGaN, and InAlGaN based on a sequential surface modification by chlorine adsorption followed by a low energy Ar plasma exposure to remove the modified layer using a reactive ion etching system. A study on the…

Communication dans un congrès

Micro-Electro-Mechanical-Systems advances for measurements at small scales: the vertical silicon probes technology extended to nearfield optics

B. Walter, E. Mairiaux, Sophie Eliet, Jean-Francois Lampin, Marc Faucher

Instrumentation intending to go beyond the limits of current Atomic Force Microscope setups (AFM), and applications requiring AFM to be integrated in non-standards environmental conditions need sensors that overcome limitations given by available probes. We show that the vertical probe technology…

2019 International Conference on Manipulation, Automation and Robotics at Small Scales (MARSS 2019), Jul 2019, Helsinki, Finland. pp.1-5, ⟨10.1109/MARSS.2019.8860980⟩. ⟨hal-03321928⟩

Article dans une revue

The Effects of AlN and Copper Back Side Deposition on the Performance of Etched Back GaN/Si HEMTs

Georges Pavlidis, Samuel Kim, Idriss Abid, Malek Zegaoui, F Medjdoub, Samuel Graham

The breakdown voltage of GaN/Si high electron mobility transistors (HEMTs) for power electronics has shown to be improved by removing the silicon substrate. The drawback to this approach is the increase in the device's thermal resistance which limits the power dissipation that the device can…

IEEE Electron Device Letters, 2019, 40 (7), pp.1060-1063. ⟨10.1109/LED.2019.2915984⟩. ⟨hal-02356736⟩

Article dans une revue

Second-order autoregressive model-based Kalman filter for the estimation of a slow fading channel described by the Clarke model: Optimal tuning and interpretation

Ali Houssam El Husseini, Eric Pierre Simon, Laurent Ros

This paper treats the estimation of a flat fading Rayleigh channel with Jakes' Doppler spectrum model and slow fading variations. A common method is to use a Kalman filter (KF) based on an auto-regressive model of order p (AR(p)). The parameters of the AR model can be simply tuned by using the…

Digital Signal Processing, 2019, 90 (July), pp.125-141. ⟨10.1016/j.dsp.2019.04.008⟩. ⟨hal-02112635⟩

Article dans une revue

Digital RF transmitter with single-bit ΔΣ M-driven switched-capacitor RF DAC and embedded band filter in 28-nm FD-SOI

Razvan-Cristian Marin, Antoine Frappé, Bruno Stefanelli, Philippe Cathelin, Andreia Cathelin, Andreas Kaiser

This paper presents a single-bit RF transmitter based on single-bit switched-capacitor RF digital-to-analog converters (DACs) embedded in an finite-impulse response (FIR) filter (FIR-DACs). The transmitter system comprises a single-bit quadrature delta-sigma modulator (M), a digital mixer, and a…

IEEE Transactions on Microwave Theory and Techniques, 2019, 67 (7), pp.3200-3209. ⟨10.1109/TMTT.2019.2897929⟩. ⟨hal-02314498⟩

Article dans une revue

Toxicity Effect of Silver Nanoparticles on Photosynthetic Pigment Content, Growth, ROS Production and Ultrastructural Changes of Microalgae Chlorella vulgaris

Layla Hazeem, Gamze Kuku, Etienne Dewailly, Christian Slomianny, Alexandre Barras, Abderrahmane Hamdi, Rabah Boukherroub, Mustafa Culha, Mohamed Bououdina

Silver nanoparticles (Ag NPs) exhibit antibacterial activity and are extensively used in numerous applications. The aim of this study was to examine the toxic effect of Ag NPs on the marine microalga, Chlorella vulgaris. The microalgae, at the exponential growth phase, were treated with different…

Nanomaterials, 2019, 9 (7), pp.914. ⟨10.3390/nano9070914⟩. ⟨hal-02373174⟩

Article dans une revue

Intrinsic transport properties of nanoporous graphene highly suitable for complementary field-effect transistors

Jing Li, Christophe Delerue

The recent success to synthesize an ordered array of pores in graphene by a bottom-up approach (Moreno et al 2018 Science 360 199) yields a semiconducting nanoporous graphene with a bandgap of 0.6 eV. In this paper, we present calculations of the intrinsic carrier mobility in this new type of two-…

2D Materials, 2019, 6 (3), pp.035026. ⟨10.1088/2053-1583/ab1c25⟩. ⟨hal-02133315⟩