Publications

• Communication dans un congrès

A compact coplanar waveguide metamaterial-inspired line and its use in tunable narrow bandpass filters

Alejandro Borja, Jorge Carbonell, Vicente Boria, Angel Belenguer, Didier Lippens

In this paper, novel cells, arrays, and reconfigurable metamaterial-inspired coplanar waveguide lines are studied. The novelty stems from the control of the so-called electric and magnetic plasma frequencies by properly designing the loading elements. In particular, wide shunt wires permit one to…

40th European Microwave Conference, EuMC 2010, Sep 2010, Paris, France. pp.922-925, ⟨10.23919/EUMC.2010.5616941⟩. ⟨hal-00549943⟩

• Communication dans un congrès

Temperature dependent degradation modes in AlGaN/GaN HEMTs

Y. Douvry, Virginie Hoel, Jean-Claude de Jaeger, N. Defrance, N. Malbert, N. Labat, A. Curutchet, C. Sury, C. Dua, M. Oualli, M. Piazza, J. Bluet, W. Chikhaoui, C. Bru-Chevallier

5th European Microwave Integrated Circuits Conference, EuMIC 2010, 2010, Paris, France. pp.114-117. ⟨hal-00550022⟩

• Article dans une revue

Charged impurity scattering and mobility in gated silicon nanowires

M.P. Persson, H. Mera, Y.M. Niquet, C. Delerue, M. Diarra

We study the effects of charged impurity scattering on the electronic transport properties of h110i-oriented Si nanowires in a gate-all-around geometry, where the impurity potential is screened by the gate, gate oxide and conduction band electrons. The electronic structure of the doped nanowires is…

Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2010, 82 (11), pp.115318. ⟨10.1103/PhysRevB.82.115318⟩. ⟨hal-00549048⟩

• Communication dans un congrès

Influence de la température et de l'efficacité d'injection sur les caractéristiques physiques des lasers à cascades quantiques

A. Hamadou, D. Nehari, S. Lamari, Jean-Luc Thobel

International Conference on Optics, Photonics and their Applications, ICOPA 2010, 2010, Algiers, Algérie. ⟨hal-00591740⟩

• Article dans une revue

A novel design of a multiband microstrip antenna for the 3G cellular phones applications

M. Ben Ahmed, M. Bouhorma, F. El Ouaai, A. Mamouni, A.A. Boudhir

International Journal of Information and Communication Technologies, 2010, 3, pp.1-7. ⟨hal-00591736⟩

• Communication dans un congrès

Bottom-up approach to designing nanostructured materials for a variety of applications

D. Hourlier

7th International Conference on Inorganic Materials, 2010, Biarritz, France. ⟨hal-00591743⟩

• Article dans une revue

Asymmetric Franck-Condon factors in suspended carbon nanotube quantum dots

F. Cavaliere, E. Mariani, Renaud Leturcq, C. Stampfer, M. Sassetti

Electronic states and vibrons in carbon nanotube quantum dots have in general different location and size. As a consequence, the conventional Anderson-Holstein model, coupling vibrons to the dot total charge only, may no longer be appropriated in general. Here we explicitly address the role of the…

Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2010, 81 (20), pp.201303(R). ⟨10.1103/PhysRevB.81.201303⟩. ⟨hal-00549039⟩

• Article dans une revue

Nonequilibrium fluctuation relations in a quantum coherent conductor

S. Nakamura, Y. Yamauchi, M. Hashisaka, K. Chida, K. Kobayashi, T. Ono, R. Leturcq, K. Ensslin, K. Saito, Y. Utsumi, A.C. Gossard

We experimentally demonstrate the validity of non-equilibrium fluctuation relations by using a quantum coherent conductor. In equilibrium the fluctuation-dissipation relation leads to the correlation between current and current noise at the conductor, namely, Johnson-Nyquist relation. When the…

Physical Review Letters, 2010, 104 (8), pp.080602. ⟨10.1103/PhysRevLett.104.080602⟩. ⟨hal-00549432⟩

• Article dans une revue

AlGaN/GaN high electron mobility transistors as a voltage-tunable room temperature terahertz sources

A. El Fatimy, N. Dyakonova, Y. Meziani, T. Otsuji, W. Knap, S. Vandenbrouk, K. Madjour, Didier Theron, Christophe Gaquière, M.A. Poisson, S. Delage, P. Pristawko, C. Skierbiszewski

We report on room temperature terahertz generation by a submicron size AlGaN/GaN-based high electron mobility transistors. The emission peak is found to be tunable by the gate voltage between 0.75 and 2.1 THz. Radiation frequencies correspond to the lowest fundamental plasma mode in the gated…

Journal of Applied Physics, 2010, 107 (2), pp.024504. ⟨10.1063/1.3291101⟩. ⟨hal-00549452⟩

• Article dans une revue

Dielectric microwave characterizations of (Ba,Sr)TiO3 film deposited on high resistivity silicon substrate : analysis by two-dimensional tangential finite element method

Freddy Ponchel, J. Midy, Jean-François Legier, Caroline Soyer, Denis Remiens, T. Lasri, G. Gueguan

Journal of Applied Physics, 2010, 107, pp.054112-1-5. ⟨10.1063/1.3309423⟩. ⟨hal-00549504⟩