Publications

• Communication dans un congrès

Hexagonal boron nitride nanowalls synthesized by unbalanced RF magnetron sputtering

B. Ben Moussa, J. d'Haen, C. Borschel, M. Saitner, A. Soltani, V. Mortet, C. Ronning, M. d'Olieslaeger, H.G. Boyen, K. Haenen

Materials Research Society Fall Meeting, MRS Fall 2010, Symposium CC : Boron and boron compounds - From fundamentals to applications, 2010, Boston, MA, United States. pp.mrsf10-1307-cc06-09, 1-6, ⟨10.1557/opl.2011.505⟩. ⟨hal-00800885⟩

• Article dans une revue

Characterization of ytterbium silicide formed in ultra high vacuum

Adam Laszcz, Jacek Ratajczak, Andrzej Czerwinski, Jerzy Katcki, Vesna Srot, Fritz Phillipp, Peter A. van Aken, Dmitri Yarekha, Nicolas Reckinger, Guilhem Larrieu, Emmanuel Dubois

The formation of ytterbium silicide fabricated by annealing at 480 °C for one hour has been studied by means of high resolution transmission electron microscopy (HRTEM) and energy dispersive X-ray spectroscopy (EDS). The annealing process has been performed under ultra high vacuum (UHV) conditions…

Journal of Physics: Conference Series, 2010, 209 : 16th International Conference on Microscopy of Semiconducting Materials, pp.012056 (1--4). ⟨10.1088/1742-6596/209/1/012056⟩. ⟨hal-00549559⟩

• Article dans une revue

A theoretical and experimental study of the BCB thin-film cap zero-level package based on FEM simulations

S. Seok, N. Rolland, P.A. Rolland

Journal of Micromechanics and Microengineering, 2010, 20, pp.095010-1-7. ⟨10.1088/0960-1317/20/9/095010⟩. ⟨hal-00548602⟩

• Article dans une revue

Low microwave noise of AlGaN/GaN HEMTs fabricated on SiCopSiC substrates

Virginie Hoel, N. Defrance, Y. Douvry, Jean-Claude de Jaeger, N. Vellas, Christophe Gaquière, M.A. Di Forte-Poisson, J. Thorpe, R. Langer

Electronics Letters, 2010, 46, pp.84-85. ⟨10.1049/el.2010.2576⟩. ⟨hal-00549457⟩

• Article dans une revue

High frequency modelling of power transformer : application to railway substation in scale model

H. Ouaddi, S. Baranowski, N. Idir

Przeglad Elektrotechniczny , 2010, 86, pp.165-169. ⟨hal-00549475⟩

• Article dans une revue

AlInN/AlN/GaN HEMT technology on SiC with 10-W/mm and 50% PAE at 10 GHz

N. Sarazin, E. Morvan, M.A. Di Forte Poisson, M. Oualli, Christophe Gaquière, O. Jardel, O. Drisse, M. Tordjman, M. Magis, S.L. Delage

IEEE Electron Device Letters, 2010, 31, pp.11-13. ⟨10.1109/LED.2009.2035145⟩. ⟨hal-00549451⟩

• Article dans une revue

Thermal resistance of AlGaN/GaN HEMTs on SopSiC composite substrate

N. Defrance, Y. Douvry, Virginie Hoel, J.C. Gerbedoen, A. Soltani, Michel Rousseau, Jean-Claude de Jaeger, R. Langer, H. Lahreche

Electronics Letters, 2010, 46, pp.949-950. ⟨10.1049/el.2010.0431⟩. ⟨hal-00549463⟩

• Article dans une revue

Statistical channel model based on alpha-stable random processes and application to the 60 GHz ultra wide band channel

N. Azzaoui, Laurent Clavier

IEEE Transactions on Communications, 2010, 58, pp.1457-1467. ⟨10.1109/TCOMM.2010.05.090069⟩. ⟨hal-00548612⟩

• Communication dans un congrès

Development of a functional model for the nanoparticle-organic memory transistor

O. Bichler, W. Zhao, G. Gamrat, F. Alibart, S. Pleutin, D. Vuillaume

IEEE International Symposium on Circuits and Systems, ISCAS 2010, 2010, France. pp.1663-1666, ⟨10.1109/ISCAS.2010.5537487⟩. ⟨hal-00549960⟩

• Communication dans un congrès

Continuous wave terahertz photomixer from low temperature grown GaAs with high carrier mobility

H. Tanoto, Q.Y. Wu, J.H. Teng, M. Sun, Z.N. Chen, T. Htoo, S.J. Chua, Jean-Francois Lampin, A. Gokarna, El Hadj Dogheche

35th International Conference on Infrared, Millimeter and THz Waves, IRMMW-THz 2010, 2010, Italy. pp.1-2, ⟨10.1109/ICIMW.2010.5612417⟩. ⟨hal-00549948⟩