Publications

• Communication dans un congrès

Efficient spreading code allocation strategy for a downlink MC-CDMA system in a time varying frequency selective channel

H. El Ghazi, C. Garnier, Y. Delignon

2006, 5 pp. ⟨hal-00154925⟩

• Article dans une revue

Room-temperature Terahertz Emission from Nanometer Field Effect Transistors

N. Dyakonova, A. El Fatimy, J. Lusakowski, W. Knap, Michel Dyakonov, M.-A. Poisson, E. Morvan, S. Bollaert, A. Shchepetov, Yannick Roelens, Christophe Gaquière, D. Theron, A. Cappy

Room-temperature generation of terahertz radiation in nanometer gate length InAlAs/InGaAs and AlGaN/GaN high-mobility transistors is reported. A well-defined source-drain voltage threshold for the emission exists, which depends on the gate bias. Spectral analysis of the emitted radiation is…

Applied Physics Letters, 2006, 88 (14), pp.141906. ⟨10.1063/1.2191421⟩. ⟨hal-00264792⟩

• Article dans une revue

Water exclusion at the nanometer scale provides long term passivation of silicon(111) grafted with alkyl monolayers

P. Gorostiza, C. Henry de Villeneuve, Q.Y. Sun, F. Sanz, X. Wallart, Rabah Boukherroub, P. Allongue

Journal of Physical Chemistry B, 2006, 110, pp.5576-5585. ⟨hal-00127062⟩

• Article dans une revue

Self assembled monolayers on silicon for molecular electronics

D.K. Aswal, S. Lenfant, David Guérin, J.V. Yakhmi, D. Vuillaume

Analytica Chimica Acta, 2006, 568, pp.84-108. ⟨hal-00127116⟩

• Article dans une revue

Excitons in boron nitride nanotubes : dimensionality effects

L. Wirtz, A. Marini, A. Rubio

Physical Review Letters, 2006, 96, pp.126104/1-4. ⟨hal-00127833⟩

• Communication dans un congrès

Switching properties at nanoscale : on the influence of the intrinsic finite size effect

Laurent Baudry

International Symposium on Integrated Ferroelectrics, ISIF 2006, 2006, Honolulu, Hawaii, United States. ⟨hal-00128182⟩

• Communication dans un congrès

Large signal microwave characterization of GaN HEMTs

D. Theron, M. Werquin, B. Grimbert, D. Ducatteau, S. Vandenbrouck, Christophe Gaquière

Workshop on Compound Semiconductor Materials and Devices, WOCSEMMAD'06, 2006, Phoenix, AZ, United States. ⟨hal-00128163⟩

• Article dans une revue

High order explicit versus quasi-linear implicit finite-difference approximation for semiconductor device time-domain macroscopic modelling on parallel computer

A. El Moussati, Christophe Dalle

Journal of Computational Electronics, 2006, 5, pp.235-240. ⟨hal-00128187⟩

• Communication dans un congrès

On the crucial role of the insulator-semiconductor interface in organic thin film transistors

G. Horowitz, M. Mottaghi, P. Lang, F. Rodriguez, A. Yassar, S. Lenfant, D. Vuillaume

SPIE Annual Meeting, Symposium on Organic Field-Effect Transistors V, 2006, San Diego, CA, United States. ⟨hal-00127155⟩

• Communication dans un congrès

Role of interfaces on the direct tunneling and the inelastic tunneling behaviors in metal/alkylsilane/silicon junctions

D. Vuillaume, D. K. Aswal, David Guérin, S. Lenfant, C. Petit, G. Salace, J. V. Yakhmi

Materials Research Society Spring Meeting, 2006, San Francisco, CA, United States. ⟨hal-00127160⟩