Publications

• Article dans une revue

Fabrication and characterization of 1.1 GHz blade nanoelectromechanical resonator

Vincent Agache, Bernard Legrand, Dominique Collard, Lionel Buchaillot, Hiroyuki Fujita

An electromechanical resonator based on a blade geometry is proposed in this letter. This particular geometry allows self-alignment of the mechanical resonator structure to its lateral electrodes while achieving high eigenfrequencies in the GHz range. This letter reports both the fabrication…

Applied Physics Letters, 2005, 86, pp.213104-1-3. ⟨10.1063/1.1929873⟩. ⟨hal-00125633⟩

• Proceedings/Recueil des communications

Aggregati and congiunti

Raffaele Pisano

Proceedings of XCI SIF National Congress Italian Society of Physics, SIF, pp.45-46, 2005. ⟨hal-04515843⟩

• Communication dans un congrès

Composition modulation and local structure in strained diluted GaInNAs nitride alloy thin layers

C. Priester, A. Metsue

2005, pp.0891-EE10-29.1 - 0891-EE10-29.6. ⟨hal-00126205⟩

• Communication dans un congrès

A metamorphic GaAs HEMT distributed amplifier with 50 GHz bandwidth and low noise for 40 Gbits/s photoreceiver

G. Wolf, H. Happy, S. Demichel, R. Leblanc, F. Blache, R. Lefevre, Gilles Dambrine

2005, pp.27-29. ⟨hal-00125306⟩

• Communication dans un congrès

Noise in SOI MOSFETs and gate-all-around transistors

B. Iniguez, A. Lazaro, H.A. Hamid, G. Pailloncy, Gilles Dambrine, Francois Danneville

18th International Conference on Noise and Fluctuations, ICNF 2005, 2005, Salamanca, Spain. ⟨hal-00125321⟩

• Communication dans un congrès

Metamorphic growth of InAs/InAlAs heterostructures on InP(001) substrates

X. Wallart, J. Lastennet, F. Mollot

13th European Molecular Beam Epitaxy Workshop, Euro-MBE, 2005, Grindelwald, Switzerland. ⟨hal-00125392⟩

• Communication dans un congrès

Hydrous profile modeling in porous materials from reflection coefficient measurement at 2.45 GHz

D. Glay, T. Lasri

2005, pp.206-213. ⟨hal-00125334⟩

• Article dans une revue

High power and linearity performances of gallium nitride HEMT devices on sapphire substrate

M. Werquin, Christophe Gaquière, Y. Guhel, N. Vellas, D. Theron, B. Boudart, Virginie Hoel, Marie Germain, Jean-Claude de Jaeger, S. Delage

The benefit of high drain-source bias voltages of GaN devices on sapphire substrates for high linearity applications is demonstrated. Whatever the output power densities considered, the corresponding intermodulation ratio is at least 20 dB better than usual PHEMT devices on GaAs substrates for the…

Electronics Letters, 2005, 41 (1), ⟨10.1049/el:20056735⟩. ⟨hal-01646906⟩

• Communication dans un congrès

High mobility InAs/AlInAs metamorphic heterostructures on InP (001)

X. Wallart, J. Lastennet, F. Mollot

2005, pp.94-97. ⟨hal-00125391⟩

• Communication dans un congrès

Modèles numériques en acoustique non-linéaire – Application aux ultrasons de puissance

Bertrand Dubus, C. Campos-Pozuelo, C. Vanhille

Journée du GDR Ondes - Modèles de propagation en acoustique, 2005, Paris, France. ⟨hal-00125901⟩