Publications
Affichage de 13971 à 13980 sur 16256
Depth dependence of defect evolution and TED during annealing
B. Colombeau, N.E.B. Cowern, Fuccio Cristiano, P. Calvo, Y. Lamrani, Nikolay Cherkashin, E. Lampin, Alain Claverie
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 2004, 216, pp.90-94. ⟨hal-00140976⟩
Transistor MOSFET Schottky en régime nanométrique
G. Larrieu, Emmanuel Dubois
Journées Nationales Nanoélectronique, 2004, Aussois, France. ⟨hal-00140994⟩
Reliability of polycrystalline MEMS : prediction of the debugging-time
O. Millet, Pierre Bertrand, Bernard Legrand, D. Collard, L. Buchaillot
International Symposium for Testing and Failure Analysis, ISTFA 2004, 2004, Worcester, MA, United States. ⟨hal-00141030⟩
850 nm transmission type electroabsorption modulator on SiO2 substrate
Jean-Pierre Vilcot, C. Lethien, Didier Decoster
2004, pp.123-126. ⟨hal-00141188⟩
Mesures pulsées haute température en mode DC et RF de HEMTs AlGaN/GaN sur substrat silicium haute résistivité
M. Werquin, D. Ducatteau, N. Vellas, D. Jambon, D. Theron, E. Delos, N. Caillas, Y. Cordier, Jean-Claude de Jaeger, S. Delage, Christophe Gaquière
GDR Grand Gap, 2004, Fréjus, France. ⟨hal-00141965⟩
Analyse des propriétés électromagnétiques des écrans cylindriques, application à la caractérisation de l'efficacité de blindage des câbles
Frédéric Broydé
2004. ⟨hal-00142006⟩
AlGaN/GaN HEMTs : technology and microwave performance
Jean-Claude de Jaeger
Microwave Engineering Europe, 2004, mai, pp.30. ⟨hal-00141996⟩
Analysis of hot carrier aging degradation in GaN MESFETs
R. Pierobon, F. Rampazzo, D. Pacetta, Christophe Gaquière, D. Theron, B. Boudart, G. Meneghesso, E. Zanoni
2004, pp.143-146. ⟨hal-00141969⟩
Detection of gold colloid adsorption at a solid/liquid interface using micromachined piezoelectric resonators
M. Guirardel, Liviu Nicu, Daisuke Saya, Y. Tauran, Eric Cattan, Denis Remiens, C. Bergaud
Japanese Journal of Applied Physics, part 2 : Letters, 2004, 43, pp.L111-L114. ⟨hal-00141179⟩
Physical analysis of the breakdown phenomenon between single or double step gate recess HEMTs
M. Elkhou, Michel Rousseau, H. Gerard, Jean-Claude de Jaeger
2004, pp.571-574. ⟨hal-00142307⟩