Publications

• Communication dans un congrès

Towards terahertz circuits via InP micromachining techniques

S. Arscott, T. David, X. Melique, P. Mounaix, D. Lippens

2000, pp.561-564. ⟨hal-00158203⟩

• Article dans une revue

Resonant and localized electromagnetic modes in finite superlattices

M. Lahlaouti, Abdellatif Akjouj, B. Djafari-Rouhani, Leonard Dobrzynski

Physical Review B, 2000, 61 (3), pp.2059-2064. ⟨10.1103/PhysRevB.61.2059⟩. ⟨hal-04070077⟩

• Communication dans un congrès

Finite element modeling of damping using piezoelectric materials

Anne-Christine Hladky, C. Granger

2000, pp.64-65. ⟨hal-00157823⟩

• Article dans une revue

Ultrasonic cavitation monitoring by acoustic noise power measurement

J. Frohly, S. Labouret, C. Bruneel, I. Looten-Baquet, R. Torguet

Journal of the Acoustical Society of America, 2000, 108, pp.2012-2020. ⟨hal-00159071⟩

• Article dans une revue

Conical radiating waves in immersed wedges

Anne-Christine Hladky, P. Langlet, M. de Billy

Journal of the Acoustical Society of America, 2000, 108, pp.3079-3083. ⟨hal-00157821⟩

• Article dans une revue

In situ deposition of sputtered PZT films: control of the growth temperature by the sputtered lead flux

G. Velu, Denis Remiens

Vacuum, 2000, 56, pp.199-204. ⟨hal-00158556⟩

• Article dans une revue

Strong isotope effects in the UV light-induced reactivation of dopants in hydrogenated or deuterated n-GaAs : Si

Jacques Chevallier, M. Barbe, M. Constant, D. Bernard-Loridant, S. Silvestre, E. Constant

Superlattices and Microstructures, 2000, 27, pp.447-452. ⟨hal-00158584⟩

• Communication dans un congrès

Optical millimeter-wave system using sub-carrier local oscillator generation

Samuel Dupont, Christophe Loyez, Jean-Pierre Vilcot, N. Haese, Didier Decoster

2000, pp.Session 3-13. ⟨hal-00158605⟩

• Article dans une revue

Formation of silicon islands on a silicon on insulator substrate upon thermal annealing

Bernard Legrand, Vincent Agache, Jean-Philippe Nys, Vincent Senez, Didier Stiévenard

Starting from silicon on insulator substrates, we show that a thermal treatment (in the 600–900 °C range) induces the creation of silicon islands. To characterize the island formation as well as the initial silicon layer thickness, we use in situ Auger electron spectroscopy analysis in an ultrahigh…

Applied Physics Letters, 2000, 76, pp.3271-3273. ⟨10.1063/1.126603⟩. ⟨hal-00158537⟩

• Article dans une revue

Design and simulation of a dual mode semiconductor laser using sampled grating DFB structure

M. Hussein-Mourad, Jean-Pierre Vilcot, Didier Decoster, D. Marcenac

IEE Proceedings. Optolectronics, 2000, 147, pp.37-42. ⟨hal-00158552⟩