Publications

• Article dans une revue

Quantum confinement in germanium nanocrystals

Yann-Michel Niquet, Guy Allan, Christophe Delerue, Michel Lannoo

The electronic structure of Ge nanocrystals is studied using a sp3 tight binding description. Analytical laws for the confinement energies, valid over the whole range of sizes, are derived. We validate our results with ab initio calculations in the local density approximation for smaller clusters.…

Applied Physics Letters, 2000, 77, pp.1182-1184. ⟨10.1063/1.1289659⟩. ⟨hal-00158666⟩

• Communication dans un congrès

Impact of inductance on timing characteristics of VLSI interconnects

Gregory Servel, Fabrice Huret, Erick Paleczny, P. Kennis, Denis Deschacht

2000, pp.C17/1-6. ⟨hal-00158602⟩

• Autre publication scientifique

Structure électronique et propriétés thermoélectriques des skudttérudites

M. Lassalle

2000. ⟨hal-00158639⟩

• Article dans une revue

Nature of impurity states in doped amorphous silicon

Guy Allan, Christophe Delerue, Michel Lannoo

We calculate the electronic structure of doped amorphous silicon in a tight-binding framework. Substitutional impurities are randomly introduced at fourfold-coordinated sites of a previously published model of a-Si:H. Our most important result is that single impurities have much larger binding…

Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2000, 61, pp.10206-10210. ⟨10.1103/PhysRevB.61.10206⟩. ⟨hal-00158663⟩

• Autre publication scientifique

Conception, réalisation et caractérisation de transistors à effet de champ et d'amplificateurs pour des applications de puissance à haute linéarité en bandes K et Ka

X. Hue

2000. ⟨hal-00158969⟩

• Communication dans un congrès

Excitonic and quasiparticle gaps in Si nanocrystals

Christophe Delerue, Michel Lannoo, Guy Allan

We present calculations of the one- and two-particle excitations in silicon nanocrystals. The one-particle properties are handled in the GW approximation, and the excitonic gap is obtained from the Bethe-Salpeter equation. We develop a tight binding version of these methods to treat clusters up to…

CECAM Workshop on Excited States and Electronic Spectra, 2000, Lyon, France. ⟨10.1103/PhysRevLett.84.2457⟩. ⟨hal-00158952⟩

• Article dans une revue

Spatial mapping of electroluminescence due to impact ionization effect in high electron mobility transistors

Christophe Gaquière, B. Boudart, P.A. Dhamlincourt

Applied Spectroscopy, 2000, 54, pp.1423-1428. ⟨hal-00158981⟩

• Communication dans un congrès

AlGaInP barrier layer grown by gas source molecular beam epitaxy for V-band AlGaInP/InGaAs/GaAs power pseudomorphic HEMT

M. Zaknoune, O. Schuler, X. Wallart, S. Piotrowicz, F. Mollot, D. Theron, Y. Crosnier

2000, pp.353-356. ⟨hal-00159004⟩

• Communication dans un congrès

Charge control and electron transport properties in InAlAs/InGaAs metamorphic HEMT's : effect of indium content

Y. Cordier, M. Zaknoune, S. Bollaert, A. Cappy

2000, pp.102-105. ⟨hal-00159005⟩

• Communication dans un congrès

HEMT structures on GaAs or InP substrates for millimeter wave power amplification

Didier Theron, Yvon Cordier, X. Wallart, S. Bollaert, Mohammed Zaknoune, Mustafa Boudrissa, Bertrand Bonte, Christophe Gaquière, Francis Mollot, A. Cappy, R. Fauquembergue, Jean-Claude de Jaeger

24th Workshop on Compound Semiconductor Devices and Integrated Circuits held in Europe, WOCSDICE'2000, May 2000, Aegean Sea, Greece. ⟨hal-00159030⟩