Publications
Affichage de 16081 à 16090 sur 16558
Détection par micro-ondes de défauts dans les matériaux diélectriques
D. Glay, T. Lasri, A. Mamouni, Y. Leroy
6èmes Journées Caractérisation Microondes et Matériaux, JCMM 2000, 2000, Paris, France. ⟨hal-00158162⟩
Towards terahertz circuits via InP micromachining techniques
S. Arscott, T. David, X. Melique, P. Mounaix, D. Lippens
2000, pp.561-564. ⟨hal-00158203⟩
Resonant and localized electromagnetic modes in finite superlattices
M. Lahlaouti, Abdellatif Akjouj, B. Djafari-Rouhani, Leonard Dobrzynski
Physical Review B, 2000, 61 (3), pp.2059-2064. ⟨10.1103/PhysRevB.61.2059⟩. ⟨hal-04070077⟩
Finite element modeling of damping using piezoelectric materials
Anne-Christine Hladky, C. Granger
2000, pp.64-65. ⟨hal-00157823⟩
Deep traps related effects in GaN MESFET's grown on saphire substrate
A. Chini, G. Meneghesso, E. Zanoni, M. Manfredi, M. Pavesi, B. Boudart, Christophe Gaquière
10th European Workshop on Heterostructure Technology, HeTech 2000, 2000, Ulm, Germany. ⟨hal-00159037⟩
Dry etching for gate recessing on AlGaN/GaN HEMTs
Y. Guhel, B. Boudart, M.A. Poisson, Jean-Claude de Jaeger
10th European Workshop on Heterostructure Technology, HeTech 2000, 2000, Ulm, Germany. ⟨hal-00159034⟩
GaN MESFETs for power and high temperature applications
B. Boudart, S. Trassaert, Christophe Gaquière, D. Theron, Y. Crosnier, François Huet, M.A. Poisson, I. Daumiller, E. Kohn
NearEst Miniworkshop on Advances in the Wide Bandgap Electronics and Opto-Electronics, 2000, Padova, Italy. ⟨hal-00159032⟩
Raman characterization of GaN synthetised by N implantation in GaAs substrate
B. Boudart, J.C. Pesant, Jean-Claude de Jaeger, P.A. Dhamelincourt
Journal of Raman Spectroscopy, 2000, 31, pp.615-618. ⟨hal-00158978⟩
Vector and parallel implementations for the FDTD analysis of millimeter wave planar antennas
H. Hoteit, Ronan Sauleau, B. Philippe, Philippe Coquet, J.P. Daniel
International Journal of High Speed Computing, 1999, 10 (2), 209-234 - 25 p. ⟨hal-00557655⟩