Publications

• Article dans une revue

Load-Pull Setup Development at 185 GHz for On-Wafer Characterization of SiGe HBT in BiCMOS 55 nm Technology

Caroline Maye, Sylvie Lepilliet, Etienne Okada, Marc Margalef-Rovira, Issa Alaji, Daniel Gloria, Guillaume Ducournau, Christophe Gaquière

This article aims to discuss challenges and performances of a passive load-pull test bench dedicated to the G-band frequencies. The first task of this work is the development of the setup to perform high power generation, impedance generation, and high-power dynamic of measurement. The solution…

IEEE Transactions on Microwave Theory and Techniques, 2022, 70 (1), pp 444-452. ⟨10.1109/TMTT.2021.3111170⟩. ⟨hal-03507882⟩

• Article dans une revue

Towards Outdoor Electromagnetic Field Exposure Mapping Generation Using Conditional GANs

Mohammed Mallik, Angesom Ataklity Tesfay, Benjamin Allaert, Rédha Kassi, Esteban Egea-Lopez, Jose-Maria Molina-Garcia-Pardo, Joe Wiart, Davy Gaillot, Laurent Clavier

With the ongoing fifth-generation cellular network (5G) deployment, electromagnetic field exposure has become a critical concern. However, measurements are scarce, and accurate electromagnetic field reconstruction in a geographic region remains challenging. This work proposes a conditional…

Sensors, 2022, 22 (24), pp.9643. ⟨10.3390/s22249643⟩. ⟨hal-03919067⟩

• Article dans une revue

Unstationary dynamics of drops subjected to MHz-surface acoustic waves modulated at low frequency

Philippe Brunet, Michael Baudoin

In the present work, we investigate the unstationary dynamics of sessile droplets subjected to high-frequency surface acoustic waves modulated at a lower frequency close to the first inertio-capillary resonance mode of the drop. Under the action of both acoustic streaming and radiation pressure,…

Experiments in Fluids, 2022, 63 (1), pp.34. ⟨10.1007/s00348-021-03365-7⟩. ⟨hal-03596906⟩

• Communication dans un congrès

High Breakdown Field and Low Trapping Effects up to 1400 V in Normally Off GaN‐on‐Silicon Heterostructures

Idriss Abid, Youssef Hamdaoui, Jash Mehta, F Medjdoub

In this study, we report on the development of a fully normally-off high electron mobility transistor (HEMT) gallium nitride on silicon (GaN-on-Si) heterostructures designed for high voltage operation. The normally-off configuration was achieved by means of a p-gallium nitride (p-GaN) cap layer…

• Article dans une revue

De la théorie à la pratique dans l’enseignement du traitement du signal : initiation à la recherche

Lynda Chehami, Nikolay Smagin, Jamal Assaad, Pierre Campistron, Frédéric Jenot, Emmanuel Moulin

Le débat entre la théorie et la pratique dans l'enseignement sur l'importance de chacun comme base de la formation en Master existe depuis plusieurs années. Ce lien est souvent sous-évaluée et on a tendance à oublier que de la théorie naît la pratique et que la pratique est basée sur la…

Journal sur l'enseignement des sciences et technologies de l'information et des systèmes, 2022, 21, pp.2042. ⟨10.1051/j3ea/20222042⟩. ⟨hal-04167135⟩

• Communication dans un congrès

Des bulles éternelles?

Aymeric Roux, Alexis Duchesne, Michael Baudoin

25emes Rencontres du non-linéaire 2022, Mar 2022, Paris, France. ⟨hal-03607814⟩

• Article dans une revue

Unidirectional Coherent Phonon Emission in an Optomechanic Nanobeam Containing Coupled Cavities

Alexander Korovin, Yan Pennec, Bahram Djafari-Rouhani

Nonreciprocal phonon emission is predicted theoretically from the coherent excitation of two coupled optomechanical cavities arranged along a phoxonic crystal nanobeam. The latter consists of a periodic array of holes and stubs and exhibits simultaneous photonic and phononic bandgaps. It is shown…

Photonics, 2022, 9 (9), 610, 14 p. ⟨10.3390/photonics9090610⟩. ⟨hal-03769698⟩

• Communication dans un congrès

Optimized ohmic contacts for InAlGaN/GaN HEMTs

Pierre Ruterana, Marie Pierre Chauvat, Magali Morales, Farid Medjdoub, Piero Gamarra, Christian Dua, Sylvain Delage

In this work, we have carried out a detailed transmission electron microscopy investigation on ohmic contacts in InAl GaN/GaN high electron mobility transistors consisting of Ti/Al/Ni/Au deposited by evaporation electron beam followed by a rapid thermal annealing at 875°C for 30s under N2…

ASDAM 2022 - 14th International Conference on Advanced Semiconductor Devices and Microsystems, Oct 2022, Smolenice, Slovakia. pp.1-8, ⟨10.1109/ASDAM55965.2022.9966781⟩. ⟨hal-03930667⟩

• Article dans une revue

Pairing cells of different sizes in a microfluidic device for immunological synapse monitoring

Faruk Azam Shaik, Clara Lewuillon, Aurélie Guillemette, Bahram Ahmadian, Carine Brinster, Bruno Quesnel, Dominique Collard, Yasmine Touil, Loïc Lemonnier, Mehmet Tarhan

Analyzing cell–cell interaction is essential to investigate how immune cells function. Elegant designs have been demonstrated to study lymphocytes and their interaction partners. However, these devices have been targeting cells of similar dimensions. T lymphocytes are smaller, more deformable, and…

Lab on a Chip, 2022, 22 (5), pp.908-920. ⟨10.1039/d1lc01156a⟩. ⟨hal-03565627⟩

• Chapitre d'ouvrage

10. Incremental learning of convolutional neural networks in bioinformatics

Wafa Mousser, Salima Ouadfel, Abdelmalik Taleb-Ahmed

In recent years, convolutional neural networks (CNNs) have been widely used in various computer visual recognition tasks and then extensively applied for medical images, particularly for computer-aided diagnosis. Despite this success, CNNs suffer from a catastrophic forgetting issue, making it…

Artificial Neural Networks for Renewable Energy Systems and Real-World Applications, Elsevier, pp.223-238, 2022, ⟨10.1016/B978-0-12-820793-2.00001-X⟩. ⟨hal-03882910⟩