Publications

Affichage de 5341 à 5350 sur 16434


  • Communication dans un congrès

CupCarbon-Lab: An IoT Emulator

Ahcène Bounceur, Olivier Marc Marc, Massinissa Lounis, Julien Soler, Laurent Clavier, Pierre Combeau, Rodolphe Vauzelle, Loïc Lagadec, Reinhardt Euler, Madani Bezoui, Pietro Manzoni

In the new generation of networks, not only computers are connected but also objects like cars, streets, buildings, or just, everything. In general, these things communicate by means of internet using gateways. Simulating these systems can help to validate specific algorithms and concepts. However…

IEEE Consumer Communications & Networking Conference, Jan 2018, Las Vegas, United States. ⟨10.1109/CCNC.2018.8319313⟩. ⟨hal-01704422⟩

  • Autre publication scientifique

Demain un ordinateur inspiré de notre cerveau ?

Hugo Leroux, Ilias Sourikopoulos, Sara Hedayat, Christophe Loyez, Francois Danneville, Virginie Hoel, Eric Mercier, A. Cappy

CNRS Le Journal, 12 janvier, 2018. ⟨hal-03341316⟩

  • Communication dans un congrès

Highly Sensitive Surface Acoustic Wave Magnetic Field Sensor Using Multilayered TbCo2/FeCo Thin Film

Aurelien Mazzamurro, Abdelkrim Talbi, Yannick Dusch, Omar Elmazria, Philippe Pernod, Olivier Bou Matar, Nicolas Tiercelin

Over the last decades, the use of Surface Acoustic Waves (SAW) has emerged as a promising technology in many applications such as filters, signal processing but also sensors. We report the fabrication and the characterization of a SAW delay line magnetic field sensor using uniaxial multi-layered…

32nd Eurosensors Conference, EUROSENSORS 2018, Sep 2018, Graz, Austria. pp.902, ⟨10.3390/proceedings2130902⟩. ⟨hal-02318300⟩

  • Article dans une revue

Graphene FETs Based on High Resolution Nanoribbons for HF Low Power Applications

David Mele, Sarah Mehdhbi, Dalal Fadil, Wei Wei, Abdelkarim Ouerghi, Sylvie Lepilliet, Henri Happy, Emiliano Pallecchi

In this paper we present high frequency field effect transistors based on graphene nanoribbons arrays (GNRFETs). The nanoribbons serve as a channel for the transistors and are fabricated with a process based on e-beam lithography and dry etching of high mobility hydrogen intercalated epitaxial…

Electronic Materials Letters, 2018, 14 (2), pp.133-138. ⟨10.1007/s13391-018-0038-x⟩. ⟨hal-03183508⟩