Publications

• Communication dans un congrès

Near-field microscopy : from MIR to THz

Gabriel Moreno, Antoine Pagies, Damien Ducatteau, Nicolas Clément, Tahsin Akalin, Mathias Vanwolleghem, Jean-Francois Lampin

joint 25th Conference of the Condensed Matter Division of the European Physical Society, and 14èmes Journées de la Matière Condensée, CMD25-JMC14, 2014, Paris, France. 2 p. ⟨hal-01015277⟩

• Article dans une revue

Thermal management of electronic devices by composite materials integrated in silicon

Emmanuel Ollier, U. Soupremanien, V. Remondiere, J. Dijon, H. Le Poche, A.L. Seiler, F. Lefevre, S. Lips, Christophe Kinkelin, Nathalie Rolland, Paul-Alain Rolland, Malek Zegaoui, S. Lhostis, P. Ancey, B. Descouts, Y. Kaplan

As the power of electronic systems is increasing, thermal fluxes are getting higher, up to more than 100 W/cm2 in the more critical cases. They result in hot spots with various consequences, especially performance reduction and reliability issues. Most of the prior research has been focused on…

Microelectronic Engineering, 2014, 127, pp.28-33. ⟨10.1016/j.mee.2014.03.016⟩. ⟨hal-01005617⟩

• Article dans une revue

Effect of passivation on microwave power performances of AlGaN/GaN/Si HEMTs

H. Mosbahi, M. Charfeddine, M. Gassoumi, H. Mejri, Christophe Gaquière, Bertrand Grimbert, M.A. Zaidi, H. Maaref

This paper reports on the use of plasma assisted molecular beam epitaxy of AlGaN/GaN high electron mobility transistors (HEMTs) grown on silicon substrate. Surface passivation effects on AlGaN/GaN HEMTs were studied using SiO2/SiN dielectric layers grown by plasma enhanced chemical vapor deposition…

Sensors & Transducers., 2014, 27, pp.277-279. ⟨hal-01005128⟩

• Communication dans un congrès

Ferroelectric thin films working at microwave frequency for reconfigurable devices on silicon substrate: performances comparison between BST, PST

Freddy Ponchel, Denis Remiens, Areski Ghalem, Tuami Lasri

4th International Meeting on Dielectric Materials, May 2013, Marrakech, Morocco. ⟨hal-03659197⟩

• Article dans une revue

Back cover

S. Arscott

Lab on a Chip, 2014, 14 (19), pp.3896. ⟨10.1039/C4LC90090A⟩. ⟨hal-02345645⟩

• Article dans une revue

Elastic properties of tensile nitrogen-plasma-treated multilayer silicon nitride films

M. Braccini, F. Volpi, Arnaud Devos, G. Raymond, D. Benoit, Pascal Morin

Highly stressed silicon nitride thin films are used in gate first complementary metal oxide semiconductors to improve mobility in the silicon channel. Compressive stresses improve hole mobility in p-type MOS transistors while tensile stresses increase electron mobility in n-type MOS devices. High…

Thin Solid Films, 2014, 551, pp.120-126. ⟨10.1016/j.tsf.2013.11.012⟩. ⟨hal-00925380⟩

• Article dans une revue

Phononic engineering of silicon using "dots on the fly" e-beam lithography and plasma etching

Valeria Lacatena, Maciej Haras, J.F. Robillard, Stéphane Monfray, Thomas Skotnicki, Emmanuel Dubois

Nowadays, the interest in reducing the lattice thermal conductivity (kL), without affecting the electrical one (ke), represents one of the main objectives for researchers in thermoelectricity. In semiconductors, lattice vibrations contribute about 95% to thermal conductivity. Because phonons and…

Microelectronic Engineering, 2014, 121, pp.131-134. ⟨10.1016/j.mee.2014.04.034⟩. ⟨hal-00994777⟩

• Communication dans un congrès

Design and fabrication of uni-travelling carrier (UTC) photodiode based on InxGa1-xN semiconductors

Bandar Alshehri, Karim Dogheche, P.I. Seetoh, J.H. Teng, S.J. Chua, Didier Decoster, El Hadj Dogheche

This work is focused both on InxGa1-xN single-layer and InxGa1-xN/GaN multilayered structures, with high Indium content (x>35%). In this study, InGaN/GaN films are epitaxially grown on sapphire substrates by metalorganic chemical vapor deposition (MOCVD). The microstructure of GaN and InxGa1-xN…

European Materials Research Society Spring Meeting, E-MRS Spring 2014, Symposium K - Challenges for group III nitride semiconductors for solid state lighting and beyond, 2014, Lille, France. ⟨hal-00961396⟩

• Communication dans un congrès

Polarization properties of specular and dense multipath components in a large industrial hall

Isabelle Vin, Davy Gaillot, Emmeric Tanghe, Wout Joseph, Pierre Laly, M. Lienard, Luc Martens

This paper presents a comprehensive analysis of the polarization characteristics of specular and dense multipath components in a large industrial hall, based on frequency-domain channel sounding experiments at 1.3 GHz. The RiMAX maximum-likelihood estimator is used to extract the full-polarimetric…

9th COST IC1004 Management Committee and Scientific Meeting, 2014, Ferrara, Italy. ⟨hal-00961432⟩

• Communication dans un congrès

Bande interdite de Bragg d'origine électrique dans les cristaux phononiques piezoelectriques à une dimension

Bertrand Dubus, Sébastien Degraeve, Christian Granger, Jerome O. Vasseur, M. Pham Thi, Anne-Christine Hladky

12ème Congrès Français d'Acoustique, CFA 2014, 2014, Poitiers, France. pp.Session APUS1 : Acoustique Ultrasonore, CFA2014/334, 1250-1253. ⟨hal-00978384⟩