Publications

Affichage de 7171 à 7180 sur 16279


  • Communication dans un congrès

Acoustic analogue of electromagnetic induced transparency in solid-fluid layered materials

El Houssaine El Boudouti, Ilyasse Quotane, Bahram Djafari-Rouhani

Joint 25th Conference of the Condensed Matter Division of the European Physical Society, and 14èmes Journées de la Matière Condensée, CMD25-JMC14, 2014, Paris, France. ⟨hal-01015260⟩

  • Communication dans un congrès

Optical properties of HgTe nanocrystals

Guy Allan, Christophe Delerue, Ali Al-Otaify, David J. Binks, Stephen V. Kershaw, Shuchi Gupta, Andrey L. Rogach

HgTe nanocrystals presently receive growing interest because the negative band gap in bulk HgTe enables tunability of the gap from the infrared to the near infrared in quantum dots thanks to the quantum confinement. Therefore we propose a tight-binding model of HgTe which gives an accurate band…

European Materials Research Society Spring Meeting, E-MRS Spring 2014, Symposium F - Established and emerging nanocolloids : from synthesis & characterization to applications, 2014, Lille, France. ⟨hal-01015327⟩

  • Article dans une revue

Magneto-transport subband spectroscopy in InAs nanowires

Florian Vigneau, Vladimir Prudkovskiy, Ivan Duchemin, Walter Escoffier, Philippe Caroff, Yann-Michel Niquet, Renaud Leturcq, Michel Goiran, Bertrand Raquet

We report on magnetotransport measurements in InAs nanowires under a large magnetic field (up to 55 T), providing a spectroscopy of the one-dimensional electronic band structure. Large modulations of the conductance mediated by a control of the Fermi energy reveal the Landau fragmentation, carrying…

Physical Review Letters, 2014, 112, 076801, 5 p. ⟨10.1103/PhysRevLett.112.076801⟩. ⟨hal-00959896⟩

  • Communication dans un congrès

InAs/AlGaSb Esaki tunnel diodes grown by selective area epitaxy on GaSb (001) substrate

L. Desplanque, Xianglei Han, Maria Fahed, Vinay K. Chinni, David Troadec, M.-P. Chauvat, Pierre Ruterana, Xavier Wallart

We report on the realization of AlGaSb/InAs Esaki tunnel diodes on GaSb (001) substrate. Selective area molecular beam epitaxy of InAs is used to define the area of the diodes down to submicron dimensions. A peak current density up to 1.3 MA/cm2 is achieved.

26th International Conference on Indium Phosphide and Related Materials, IPRM 2014, Compound Semiconductor Week, CSW 2014, 2014, Montpellier, France. paper Mo-C1-6, 2 p., ⟨10.1109/ICIPRM.2014.6880530⟩. ⟨hal-01059835⟩