Publications

• Autre publication scientifique

Advances in Historical Studies [Editor in Chief 2/2]

Raffaele Pisano

2013. ⟨hal-04511055⟩

• Article dans une revue

Germanium growth orientation on SrTiO3 (001) 2 × 1 surface : role of surface reduction

J.J. Wang, I. Lefebvre

Journal of Physical Chemistry C, 2013, 117, pp.9887-9894. ⟨10.1021/jp4013976⟩. ⟨hal-00824530⟩

• Autre publication scientifique

Etude de films minces de CuInS2, CuIn1-xGaxS2, et Cu2ZnSnS4, élaborés par voie sol-gel, destinés aux applications photovoltaïques

Yoan Bourlier

2013. ⟨hal-00825116⟩

• Communication dans un congrès

Nanostructured silicon based superomniphobic surfaces

T.P.N. Nguyen, Rabah Boukherroub, V. Thomy, Yannick Coffinier

5ème Assemblée Générale du GdR Nanofils Semiconducteurs, 2013, Saint-Martin-de-Londres, France. ⟨hal-00823984⟩

• Communication dans un congrès

Numerical investigation of the functionally graded materials by the interaction of the plate guided waves with discontinuities and cracks

Farouk Benmeddour, Emmanuel Moulin, Jamal Assaad

This work intends to give a better comprehension of the guided wave interactions with damage in a functionally graded material (FGM). For this purpose, a two dimensional finite element (FE) method is used to analyse the near field surrounding the damage. Then, the expansion of the solution into…

21st International Congress on Acoustics, ICA 2013, 165th Meeting of the Acoustical Society of America, 52nd Meeting of the Canadian Acoustical Association, 2013, Montréal, Canada. ⟨10.1121/1.4799189⟩. ⟨hal-00823439⟩

• Autre publication scientifique

Caractérisation de couches minces par ondes de surface générées et détectées par sources lasers

Sabrina Fourez

2013. ⟨hal-00823438⟩

• Article dans une revue

[Invited] Assessment of transistors based on GaN on silicon substrate in view of integration with silicon technology

A. Soltani, Y. Cordier, J.C. Gerbedoen, S. Joblot, Etienne Okada, M. Chmielowska, M.R. Ramdani, Jean-Claude de Jaeger

In this work, AlGaN/GaN high electron mobility transistors on (1 0 0) and (1 1 0) oriented silicon substrates are investigated in view of monolithic integration with silicon MOSFETs for making more compact microwave power electronics. Epilayers are grown by molecular beam epitaxy on highly…

Semiconductor Science and Technology, 2013, 28, pp.094003-1-6. ⟨10.1088/0268-1242/28/9/094003⟩. ⟨hal-00872010⟩

• Article dans une revue

Investigation of the anti-biofouling properties of graphene oxide aqueous solutions by electrowetting characterization

G. Perry, Yannick Coffinier, Rabah Boukherroub, V. Thomy

Journal of Materials Chemistry A, 2013, 1, pp.12355-12360. ⟨10.1039/C3TA12576A⟩. ⟨hal-00872093⟩

• Article dans une revue

Doped semiconductor nanocrystal junctions

Lukasz Borowik, Thuat Nguyen-Tran, Pere Roca I Cabarrocas, Thierry Melin

Semiconductor junctions are the basis of electronic and photovoltaic devices. Here, we investigate junctions formed from highly doped (ND 1020 1021cm 3) silicon nanocrystals (NCs) in the 2-50 nm size range, using Kelvin probe force microscopy experiments with single charge sensitivity. We show that…

Journal of Applied Physics, 2013, 114, 204305, 5 p. ⟨10.1063/1.4834516⟩. ⟨hal-00941624⟩

• Article dans une revue

Electronic structure and transport properties of Si nanotubes

J. Li, T. Gu, C. Delerue, Y.M. Niquet

The electronic structure and the transport properties of Si nanotubes with outer diameter between 2 and 20 nm are investigated using fully atomistic simulations. A formula is given for the energy of the band edges versus diameter and thickness. The phonon-limited mobility of electrons and holes is…

Journal of Applied Physics, 2013, 114 (5), pp.053706. ⟨10.1063/1.4817527⟩. ⟨hal-00871969⟩