Publications

• Article dans une revue

Polymer-based zero-level packaging technology for high frequency RF applications by wafer bonding/debonding technique using an anti-adhesion layer

J.G. Kim, S. Seok, N. Rolland, P.A. Rolland

International Journal of Precision Engineering and Manufacturing, 2012, 13, pp.1861-1867. ⟨10.1007/s12541-012-0244-7⟩. ⟨hal-00786960⟩

• Article dans une revue

Receiver-aided predistortion of power amplifier non-linearities in cellular networks

J. Zeleny, C. Dehos, P. Rosson, A. Kaiser

IET Science Measurement and Technology, 2012, 6, pp.168-175. ⟨10.1049/iet-smt.2011.0016⟩. ⟨hal-00787384⟩

• Article dans une revue

Plasmonic nanoparticles array for high-sensitivity sensing : a theoretical investigation

O. Saison Francioso, Gaëtan Lévêque, Abdellatif Akjouj, Yan Pennec, Bahram Djafari-Rouhani, Sabine Szunerits, Rabah Boukherroub

Journal of Physical Chemistry C, 2012, 116, pp.17819-17827. ⟨10.1021/jp305310v⟩. ⟨hal-00787842⟩

• Article dans une revue

Size-dependence of the exciton transitions in colloidal CdTe quantum dots

Esther Groeneveld, Christophe Delerue, Guy Allan, Yann-Michel Niquet, Celso de Mello Donega

In this paper, we present a detailed investigation of the size dependence of the optical transitions of colloidal CdTe QDs ranging in diameter from 2.9 to 14.8 nm. The energy integrated absorption cross section per CdTe unit is investigated in detail for the lowest two exciton transitions (1S3/2(h…

Journal of Physical Chemistry C, 2012, 116, pp.23160-23167. ⟨10.1021/jp3080942⟩. ⟨hal-00787845⟩

• Article dans une revue

Planar InAs/AlSb HEMTs with ion-implanted isolation

G. Moschetti, P.A. Nilsson, A. Hallen, L. Desplanque, X. Wallart, J. Grahn

IEEE Electron Device Letters, 2012, 33, pp.510-512. ⟨10.1109/LED.2012.2185480⟩. ⟨hal-00787019⟩

• Article dans une revue

Low-frequency noise in Schottky-barrier-based nanoscale field-effect transistors

N. Clement, G. Larrieu, Emmanuel Dubois

Investigation of low-frequency noise in nanoscale Schottky-barrier (SB)-based field-effect transistors (SB-FETs) is of prime importance due to its large amplitude in emerging bottom-up devices. In addition, noise can give additional information on charge transport mechanisms. In this paper, we…

IEEE Transactions on Electron Devices, 2012, 59 (1), pp.180-187. ⟨10.1109/TED.2011.2169676⟩. ⟨hal-00787365⟩

• Article dans une revue

Réalisation de transistors fibreux électroniques et de circuits électroniques textiles

X. Tao, V. Koncar, C. Dufour

L'Actualité Chimique, 2012, 360-361, pp.65-68. ⟨hal-00806590⟩

• Communication dans un congrès

C-SVM versus CRF classifier for human activity recognition

M.B. Abidine, B. Fergani, Laurent Clavier

1st International Conference on Electrical Engineering and Control Applications, ICEECA 2012, 2012, Khenchela, Algeria. paper CS-254, 1-4. ⟨hal-00806592⟩

• Article dans une revue

Experimental evidence of zero-angle refraction and acoustic wave-phase control in a two-dimensional solid/solid phononic crystal

Jerome O. Vasseur, B. Morvan, A. Tinel, N. Swinteck, Anne-Christine Hladky, P.A. Deymier

The square symmetry of the equifrequency contour of longitudinal waves in a solid/solid two-dimensional phononic crystal (PC) is shown through numerical calculations and experiments to lead to peculiar propagation phenomena. A slab of steel/epoxy PC immersed in water refracts incident longitudinal…

Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2012, 86 (13), pp.134305. ⟨10.1103/PhysRevB.86.134305⟩. ⟨hal-00786894⟩

• Article dans une revue

Investigation of optical and chemical bond properties of hydrogenated amorphous silicon nitride for optoelectronics applications

Etienne Herth, H Desré, Emmanuelle Algré, Christiane I. Legrand, Tuami Lasri

The aim of this work is to determine optimal deposition parameters of silicon nitride for optical applications. The authors present the investigation of hydrogenated amorphous silicon nitride SiNx:H deposited by the low temperature PECVD method in high frequency reactors. The study of hydrogen…

Microelectronics Reliability, 2012, 52 (1), pp.141-146. ⟨10.1016/j.microrel.2011.09.004⟩. ⟨hal-02300326⟩