Publications

• Communication dans un congrès

Fabrication and characterization of half-Kerfed LiNbO3-based high-frequency (>100MHz) ultrasonic array transducers

Jin-Ying Zhang, Wei-Jiang Xu, Julien Carlier, X.M. Ji, Bertrand Nongaillard, S. Queste, J. Zhou, Y.P. Huang

The effect of kerf depth is investigated on the performances of array transducers. A finite element tool, COMSOL, is employed to simulate the properties of acoustic field and to calculate the electrical properties of the arrays, including crosstalk effect and electrical impedance. Furthermore,…

IEEE International Ultrasonics Symposium, IUS 2011, 2011, Orlando, FL, United States. pp.1727-1730, ⟨10.1109/ULTSYM.2011.0431⟩. ⟨hal-00800467⟩

• Article dans une revue

Fabrication of AD/DA microfluidic converter using deep reactive ion etching of silicon and low temperature wafer bonding

C. Wu, F. Bendriaa, F. Brunelle, V. Senez

Microelectronic Engineering, 2011, 88, pp.1878-1883. ⟨10.1016/j.mee.2010.12.001⟩. ⟨hal-00795913⟩

• Article dans une revue

Influence of a localized defect on acoustic field correlation in a reverberant medium

Najib Abou Leyla, Emmanuel Moulin, Jamal Assaad

Journal of Applied Physics, 2011, 110, pp.084906-1-8. ⟨10.1063/1.3652907⟩. ⟨hal-00639940⟩

• Article dans une revue

Initial stages of graphitization on SiC(000-1), as studied by phase atomic force microscopy

F.J. Ferrer, E. Moreau, D. Vignaud, D. Deresmes, S. Godey, X. Wallart

The initial stages of graphitization on 4H- and 6H-SiC (000-1) under ultrahigh vacuum at temperatures of 1125–1175°C have been studied by atomic force microscopy (AFM), X-ray photoemission spectroscopy and reflected high energy electron diffraction. A progressive coverage of the surface by graphene…

Journal of Applied Physics, 2011, 109 (5), pp.054307-1-6. ⟨10.1063/1.3560896⟩. ⟨hal-00577059⟩

• Article dans une revue

TEM studies of PtSi low Schottky-barrier contacts for source/drain in MOS transistors

A. Laszcz, J. Ratajczak, A. Czerwinski, J. Katcki, N. Breil, G. Larrieu, Emmanuel Dubois

Transmission electron microscopy methods were used to determine the impact of two different implantation processes on the morphology of platinum silicide layers constituting low Schottky barrier contacts intended as the source/drain in MOS transistors. These processes are very promising candidates…

Central European Journal of Physics, 2011, 9, pp.423-427. ⟨10.2478/s11534-010-0135-4⟩. ⟨hal-00574499⟩

• Article dans une revue

Investigation of the anisotropic strain relaxation in GaSb islands on GaP

Y. Wang, P. Ruterana, H.P. Lei, Jie Chen, S. Kret, S. El Kazzi, L. Desplanque, X. Wallart

Journal of Applied Physics, 2011, 110, pp.043509-1-8. ⟨10.1063/1.3622321⟩. ⟨hal-00639828⟩

• Article dans une revue

Phase-control in two-dimensional phononic crystals

N. Swinteck, S. Bringuier, J.F. Robillard, Jerome O. Vasseur, Anne-Christine Hladky, K. Runge, P.A. Deymier

A theoretical model is developed to ascertain the necessary band structure and equi-frequency contour (EFC) features of two-dimensional phononic crystals (PCs) for the realization of phase control between propagating acoustic waves. Two different PCs, a square array of cylindrical polyvinylchloride…

Journal of Applied Physics, 2011, 110 (7), pp.074507. ⟨10.1063/1.3641634⟩. ⟨hal-00639810⟩

• Article dans une revue

Patterned L10-FePt for polarization of magnetic films

Yannick Dusch, Nicolas Tiercelin, A. Klimov, V. Rudenko, Y. Ignatov, S. Hage-Ali, Philippe Pernod, Vladimir Preobrazhensky

In various micro and nanosystems applications comprising magnetic films, the polarizing field still needs to be integrated. We hereby present a solution for the self biasing of magnetic films using micropatterned permanent magnets. Micromagnetic simulations were used as a designing and optimization…

Journal of Applied Physics, 2011, 109, pp.07A720-1-3. ⟨10.1063/1.3561172⟩. ⟨hal-00591347⟩

• Autre publication scientifique

Cristaux phononiques et métamatériaux acoustiques. Applications aux phénomènes de guidage, filtrage et de l'isolation phonique

Hocine Larabi

2011. ⟨hal-00799434⟩

• Autre publication scientifique

Transistor bipolaire Si/SiGe:C en noeud CMOS avancé pour applications (sub)-millimétriques

Thomas Lacave

2011. ⟨hal-00799453⟩