Publications

Affichage de 9071 à 9080 sur 16279


  • Communication dans un congrès

Accuracy of specular path estimates with ESPRIT and RiMAX in the presence of measurement-based diffuse multipath components

D.P. Gaillot, E. Tanghe, P. Stefanut, W. Joseph, M. Lienard, Pierre Degauque, L. Martens

5th European Conference on Antennas and Propagation, EuCAP 2011, 2011, Italy. pp.3619-3622. ⟨hal-00603111⟩

  • Article dans une revue

Design, realization, and test of a 2.1-GHz low-phase-noise oscillator based on BAW resonator

M.D. Li, S. Seok, N. Rolland, P.A. Rolland

Microwave and Optical Technology Letters, 2011, 53, pp.405-409. ⟨10.1002/mop.25690⟩. ⟨hal-00572638⟩

  • Article dans une revue

A 45° silicon mirror for acoustic propagation parallel to the plane of the substrate

S. Wang, Julien Carlier, Pierre Campistron, Wei-Jiang Xu, Dorothée Debavelaere-Callens, Bertrand Nongaillard, Assane Ndieguene, X. Zhao

The interest of a thin silicon oxide layer on a {110} silicon crystal planes used as 45° acoustical mirrors for reflection has been demonstrated. Passive mirror-like planes (groove depth ∼ 150 μm) were fabricated by wet chemical etching of (100) silicon. High frequency acoustical longitudinal waves…

Journal of Physics: Conference Series, 2011, 269, pp.012009-1-10. ⟨10.1088/1742-6596/269/1/012009⟩. ⟨hal-00572671⟩

  • Article dans une revue

Erbium silicide growth in the presence of residual oxygen

N. Reckinger, Xing Tang, S. Godey, Emmanuel Dubois, A. Laszcz, J. Ratajczak, Adriana Vlad, C.A. Dutu, J.P. Raskin

The chemical changes of Ti/Er/n-Si(100) stacks evaporated in high vacuum and grown ex situ by rapid thermal annealing were scrutinized. The emphasis was laid on the evolution with the annealing temperature of (i) the Er-Si solid-state reaction and (ii) the penetration of oxygen into Ti and its…

Journal of The Electrochemical Society, 2011, 158, pp.H715-H723. ⟨10.1149/1.3585777⟩. ⟨hal-00597075v2⟩

  • Article dans une revue

Characterization of AlGaN/GaN high electron mobility transistor grown on silicon carbide devices with a gate length Lg = 0.15 µm

M. Gassoumi, M.M. Ben Salem, S. Saadaoui, W. Chikhaoui, Christophe Gaquière, H. Maaref

Sensor letters, 2011, 9, pp.2178-2181. ⟨10.1166/sl.2011.1788⟩. ⟨hal-00795894⟩

  • Article dans une revue

Identification and localization of electronic traps in AlGaN/GaN HEMTs on Al2O3 substrates using CDLTS

O. Fathallah, M. Gassoumi, Christophe Gaquière, H. Maaref

Sensor letters, 2011, 9, pp.2380-2383. ⟨10.1166/sl.2011.1786⟩. ⟨hal-00795919⟩

  • Article dans une revue

Coplanar liquid crystal reconfigurable phase-shifters

Fehim Sahbani, Nicolas Tentillier, Christian Legrand, Karine Blary, A. Gharsallah, A. Gharbi

A coplanar liquid crystal phase-shifter is presented and characterized in the frequency range of 5–40 GHz. The interest of this structure lies in the technological realization which is very simple. The phase-shift variation is of 0.2°/cm/GHz for an attenuation of 2.5 dB/cm at 40 GHz. These…

Molecular Crystals and Liquid Crystals, 2011, Issue 1: Proceedings of the 23rd International Liquid Crystal Conference (ILCC 2010) Part III of VIII Submit an article, 542, pp.204-212. ⟨10.1080/15421406.2011.570587⟩. ⟨hal-00795916⟩