Publications

• Communication dans un congrès

Étude par ultrasons-laser de l'influence d'un défaut débouchant sur la propagation des ondes acoustiques

Frédéric Faëse, Frédéric Jenot, Mohammadi Ouaftouh, Marc Duquennoy

XIIèmes Journées d'Acoustique Physique Sous-Marine et Ultrasonore, JAPSUS 2011, 2011, Lille, France. ⟨hal-00807691⟩

• Article dans une revue

Highly coherent terahertz wave generation with a dual-frequency Brillouin fiber laser and a 1.55 μm photomixer

Guillaume Ducournau, P. Szriftgiser, Tahsin Akalin, Alexandre Beck, Denis Bacquet, Emilien Peytavit, Jean-Francois Lampin

Thanks to a portable dual-frequency Brillouin fiber laser and a 1.55 μm photomixer, we report the generation of a highly coherent kilohertz level submillimeter wave emission. Low-cost telecommunications components are used to achieve very simple source architecture. The photomixer is composed of a…

Optics Letters, 2011, 36, pp.2044-2046. ⟨10.1364/OL.36.002044⟩. ⟨hal-00597082⟩

• Article dans une revue

Opposition control with arrayed actuators in the near-wall region of a spatially-developing turbulent boundary layer

M. Pamies, E. Garnier, A. Merlen, P. Sagaut

International Journal of Heat and Fluid Flow, 2011, 32, pp.621-630. ⟨10.1016/j.ijheatfluidflow.2011.03.005⟩. ⟨hal-00597083⟩

• Article dans une revue

Simultaneous fabrication of superhydrophobic and superhydrophilic polyimide surfaces with low hysteresis

G. Scheen, K. Ziouche, Z. Bougrioua, P. Godts, D. Leclercq, T. Lasri

Langmuir, 2011, 27, pp.6490-6495. ⟨10.1021/la1050805⟩. ⟨hal-00597097⟩

• Article dans une revue

Co-integrated microfluidic and THz functions for biochip devices

Simon Laurette, A. Treizebre, Bertrand Bocquet

TeraHertz (THz) spectroscopy is becoming an alternative way to probe biological interactions in real-time conditions. However, accurate and reproducible THz measurements of aqueous solutions, largely represented in life sciences, remain difficult. A THz microsystem which couples both…

Journal of Micromechanics and Microengineering, 2011, 21, pp.065029-1-8. ⟨10.1088/0960-1317/21/6/065029⟩. ⟨hal-00597101⟩

• Article dans une revue

Growth rate model and doping metrology by atom probe tomography in silicon nanowire

W.H. Chen, R. Larde, E. Cadel, T. Xu, B. Grandidier, J.P. Nys, D. Stievenard, P. Pareige

Silicon nanowires (SiNWs) with different surface number density are fabricated using Chemical Vapor Deposition (CVD) method by controlling the catalyst droplet number density with in-situ evaporation. For comparison, another type of SiNWs is fabricated by Molecular Beam Epitaxy (MBE) method. To…

Physica Status Solidi C: Current Topics in Solid State Physics, 2011, 8, pp.771-774. ⟨10.1002/pssc.201000233⟩. ⟨hal-00597124⟩

• Article dans une revue

Asymmetry of polarization reversal and current-voltage characteristics of Pt/PZT-Film/Pt:Ti/SiO2/Si-substrate structures

S.L. Bravina, N.V. Morozovsky, J. Costecalde, Caroline Soyer, Denis Remiens, D. Deresmes

The characterization of the asymmetries of bipolar charge-voltage and current-voltage loops of polarization reversal and unipolar current-voltage curves for Pt/PZT-film/Pt:Ti/SiO2/Si-substrate systems was performed in the dynamic mode. The asymmetry of local deformation-voltage loops was observed…

Smart Materials Research, 2011, 2011, pp.374915. ⟨10.1155/2011/374915⟩. ⟨hal-00783492⟩

• Communication dans un congrès

Coulomb energy determination of a single Si dangling bond

T.H. Nguyen, G. Mahieu, Maxime Berthe, B. Grandidier, C. Delerue, D. Stievenard, P. Ebert

Herodot Summer School, 2011, Cargese, France. ⟨hal-00807579⟩

• Communication dans un congrès

Accurate multibias equivalent-circuit extraction for AlGaN/GaN/Si HEMTs passivated SiO2/Si3N4

H. Mosbahi, M. Gassoumi, M.A. Zaidi, Christophe Gaquière, B. Grimbert, H. Maaref

European Materials Research Society Fall Meeting, E-MRS Fall 2011, Symposium H : Novel materials for electronics, optoelectronics, photovoltaics and energy saving applications, 2011, Warsaw, Poland. ⟨hal-00807603⟩

• Communication dans un congrès

Impact of gate length on pulsed IV characteristics of passivated InAlN/GaN HFETs

M. Heuken, A. Vescan, F. Lecourt, H. Behmenburg, N. Defrance, Virginie Hoel, Jean-Claude de Jaeger, H. Kalisch, N. Ketteniss

9th International Conference on Nitride Semiconductors, ICNS-9, 2011, Glasgow, United Kingdom. ⟨hal-00807610⟩