Publications
Affichage de 10071 à 10080 sur 16545
A novel wafer level bonding/debonding technique using an anti-adhesion layer for polymer-based zero-level packaging of RF device
J.G. Kim, S. Seok, N. Rolland, P.A. Rolland
60th Electronic Components and Technology Conference, ECTC 2010, 2010, Las Vegas, NV, United States. pp.323-328, ⟨10.1109/ECTC.2010.5490954⟩. ⟨hal-00800848⟩
Nonequilibrium fluctuation relations in a quantum coherent conductor
S. Nakamura, Y. Yamauchi, M. Hashisaka, K. Chida, K. Kobayashi, T. Ono, R. Leturcq, K. Ensslin, K. Saito, Y. Utsumi, A.C. Gossard
30th International Conference on the Physics of Semiconductors, ICPS-30, 2010, Seoul, South Korea. pp.329-330, ⟨10.1063/1.3666387⟩. ⟨hal-00800869⟩
Hexagonal boron nitride nanowalls synthesized by unbalanced RF magnetron sputtering
B. Ben Moussa, J. d'Haen, C. Borschel, M. Saitner, A. Soltani, V. Mortet, C. Ronning, M. d'Olieslaeger, H.G. Boyen, K. Haenen
Materials Research Society Fall Meeting, MRS Fall 2010, Symposium CC : Boron and boron compounds - From fundamentals to applications, 2010, Boston, MA, United States. pp.mrsf10-1307-cc06-09, 1-6, ⟨10.1557/opl.2011.505⟩. ⟨hal-00800885⟩
A theoretical and experimental study of the BCB thin-film cap zero-level package based on FEM simulations
S. Seok, N. Rolland, P.A. Rolland
Journal of Micromechanics and Microengineering, 2010, 20, pp.095010-1-7. ⟨10.1088/0960-1317/20/9/095010⟩. ⟨hal-00548602⟩
Low microwave noise of AlGaN/GaN HEMTs fabricated on SiCopSiC substrates
Virginie Hoel, N. Defrance, Y. Douvry, Jean-Claude de Jaeger, N. Vellas, Christophe Gaquière, M.A. Di Forte-Poisson, J. Thorpe, R. Langer
Electronics Letters, 2010, 46, pp.84-85. ⟨10.1049/el.2010.2576⟩. ⟨hal-00549457⟩
High frequency modelling of power transformer : application to railway substation in scale model
H. Ouaddi, S. Baranowski, N. Idir
Przeglad Elektrotechniczny , 2010, 86, pp.165-169. ⟨hal-00549475⟩
AlInN/AlN/GaN HEMT technology on SiC with 10-W/mm and 50% PAE at 10 GHz
N. Sarazin, E. Morvan, M.A. Di Forte Poisson, M. Oualli, Christophe Gaquière, O. Jardel, O. Drisse, M. Tordjman, M. Magis, S.L. Delage
IEEE Electron Device Letters, 2010, 31, pp.11-13. ⟨10.1109/LED.2009.2035145⟩. ⟨hal-00549451⟩
Thermal resistance of AlGaN/GaN HEMTs on SopSiC composite substrate
N. Defrance, Y. Douvry, Virginie Hoel, J.C. Gerbedoen, A. Soltani, Michel Rousseau, Jean-Claude de Jaeger, R. Langer, H. Lahreche
Electronics Letters, 2010, 46, pp.949-950. ⟨10.1049/el.2010.0431⟩. ⟨hal-00549463⟩
Statistical channel model based on alpha-stable random processes and application to the 60 GHz ultra wide band channel
N. Azzaoui, Laurent Clavier
IEEE Transactions on Communications, 2010, 58, pp.1457-1467. ⟨10.1109/TCOMM.2010.05.090069⟩. ⟨hal-00548612⟩
Development of a functional model for the nanoparticle-organic memory transistor
O. Bichler, W. Zhao, G. Gamrat, F. Alibart, S. Pleutin, D. Vuillaume
IEEE International Symposium on Circuits and Systems, ISCAS 2010, 2010, France. pp.1663-1666, ⟨10.1109/ISCAS.2010.5537487⟩. ⟨hal-00549960⟩