Publications

• Article dans une revue

Convolutional perfectly matched layer for elastic second-order wave equation

Y.F. Li, Olivier Bou Matar

Journal of the Acoustical Society of America, 2010, 127, pp.1318-1327. ⟨10.1121/1.3290999⟩. ⟨hal-00548954⟩

• Article dans une revue

Fracture toughness, hardness, and Young's modulus of tantalum nanocrystalline films

G. Guisbiers, E. Herth, L. Buchaillot, T. Pardoen

Applied Physics Letters, 2010, 97, pp.143115-1-3. ⟨10.1063/1.3496000⟩. ⟨hal-00548997⟩

• Article dans une revue

Wavelength selection in the crown splash

Li V. Zhang, Philippe Brunet, Jens Eggers, Robert D. Deegan

The impact of a drop onto a liquid layer produces a splash that results from the ejection and dissolution of one or more liquid sheets, which expand radially from the point of impact. In the crown splash parameter regime, secondary droplets appear at fairly regularly spaced intervals along the rim…

Physics of Fluids, 2010, 22, pp.122105-1-9. ⟨10.1063/1.3526743⟩. ⟨hal-00800825⟩

• Communication dans un congrès

Paths complex gain tracking algorithms for OFDM receiver in slowly-varying channels

L. Ros, H. Hijazi, E.P. Simon

4th International Symposium on Communications, Control and Signal Processing, ISCCSP 2010, 2010, Cyprus. pp.1-6, ⟨10.1109/ISCCSP.2010.5463490⟩. ⟨hal-00568955⟩

• Communication dans un congrès

Baseband Fading Channel Simulator for Inter-Vehicle Communication using SystemC-AMS

Abdelbasset Massouri, Antoine Lévêque, Laurent Clavier, Michel Vasilevski, Andreas Kaiser, Marie-Minerve Louerat

System level modeling and simulation have become a key issue in analyzing, optimizing and designing wireless systems. In this paper, modeling RF front end devices and radio propaga- tion channel especially fading time-variant channel for Inter- Vehicle Communication using SystemC-AMS are…

2010 IEEE International Behavioral Modeling and Simulation Conference (BMAS 2010), Sep 2010, San Jose, CA, United States. pp.36-41. ⟨hal-00632156⟩

• Article dans une revue

Fully relaxed low-mismatched InAlAs layer on an InP substrate by using a two step buffer

S.R. Plissard, Christophe Coinon, Ydir Androussi, X. Wallart

The strain relaxation in low mismatched InxAl1−xAs layers has been studied by triple axis x-ray diffraction, transmission electron microscopy, and photoluminescence. Using a two step buffer, a fully relaxed top layer has been grown by adapting the composition and thickness of a first “strained…

Journal of Applied Physics, 2010, 107 (1), pp.0161021. ⟨10.1063/1.3275872⟩. ⟨hal-00548708⟩

• Communication dans un congrès

Tunable room temperature THz emission from AlGaN/GaN high electron mobility transistors

Nina Diakonova, A. El Fatimy, Y. Meziani, T. Otsuji, Dominique Coquillat, Wojciech Knap, Frederic Teppe, S. Vandenbrouk, K. Madjour, Didier Theron, Christophe Gaquière, M. A. Poisson, S. Delage

We present experimental results on the Terahertz radiation from high electron mobility transistors at room temperature, which clearly show the tunability of the emission frequency by the gate voltage.

35th International Conference on Infrared, Millimeter and Terahertz Waves, Sep 2010, Rome, Italy. pp.1. ⟨hal-00636136⟩

• Communication dans un congrès

Surface microscopy with laserless MEMS based AFM probes

Emmanuelle Algre, Bernard Legrand, Marc Faucher, Benjamin Walter, Lionel Buchaillot

We report here on results of AFM microscopy using laserless MEMS based probes. This new concept of atomic force microscope (AFM) probes using bulk-mode silicon resonators was previously presented [1]. They consist on silicon ring resonators with capacitive transducers and integrated sensing nanotip…

23rd IEEE International Conference on Micro Electro Mechanical Systems, MEMS 2010, Jan 2010, Hong Kong, China. pp.292-295, ⟨10.1109/MEMSYS.2010.5442509⟩. ⟨hal-00549972⟩

• Communication dans un congrès

AlGaN/GaN HEMT on Si (111) substrate for millimeter microwave power applications

S. Bouzid, Virginie Hoel, N. Defrance, H. Maher, F. Lecourt, M. Renvoise, D. Smith, Jean-Claude de Jaeger

8th International Conference on Advanced Semiconductor Devices and Microsystems, ASDAM 2010, 2010, Slovakia. pp.111-114, ⟨10.1109/ASDAM.2010.5666316⟩. ⟨hal-00549981⟩

• Communication dans un congrès

AlGaN/GaN HEMTs reported on flexible polyimide substrate

Marie Lesecq, Virginie Hoel, A. Lecavelier, E. Pichonat, Jean-Claude de Jaeger, Y. Douvry, F. Lecourt, A. Ebongue, Y. Cordier

5th Space Agency-MOD Round Table Workshop on GaN Component Technologies, 2010, Netherlands. pp.9-12. ⟨hal-00549997⟩