Publications

• Article dans une revue

Current conduction and saturation mechanism in AlGaN/GaN ungated structures

J. Kuzmik, S. Bychikhin, D. Pogany, Christophe Gaquière, E. Morvan

Current conduction and saturation mechanisms in ungated AlGaN/GaN/SiC transfer length method test structures with contact-to-contact distance L varying from 2to32µm are investigated. Current-voltage (I-V) characteristics are measured in the pulsed and in the direct current (dc) regimes. The pulsed…

Journal of Applied Physics, 2006, 99, pp.123720-1-7. ⟨10.1063/1.2207572⟩. ⟨hal-00154930⟩

• Communication dans un congrès

Analyse de la propagation des ondes dans des chaînes de billes

Anne-Christine Hladky, M. de Billy

Journées ‘Etude de la propagation ultrasonore en milieux non homogènes en vue du contrôle non destructif' du GDR US 2501, 2006, France. pp.34-38. ⟨hal-00369949⟩

• Communication dans un congrès

Development and characterization of piezofiber based 1-3 ultrasonic composites

A.J. Schonecker, T. Rödig, Anne-Christine Hladky, T. Daue

2006 US Navy Workshop on Acoustic Transduction Materials and Devices, 2006, State College, PA, United States. ⟨hal-00369955⟩

• Communication dans un congrès

Design of a distributed oscillator in 130 nm SOI MOS technology

M. Si Moussa, C. Pavageau, L. Picheta, Francois Danneville, J. Russat, N. Fel, J.P. Raskin, D. Vanhoenacker-Janvier

2006, 4 pp. ⟨hal-00147510⟩

• Communication dans un congrès

A fully InP monolithic integrated millimeter-wave reflectometer

Kamel Haddadi, H. El Aabbaoui, B. Gorisse, D. Glay, N. Rolland, T. Lasri

2006, pp.703-706. ⟨hal-00147515⟩

• Article dans une revue

Study of the effects of signal filtering on acousto-optic correlator performance

O. Bazzi, Marc G. Gazalet, Y. Mohanna, A. Alaeddine, A. Hafiz

Optical Engineering, 2006, 45, pp.128201-1-7. ⟨hal-00147741⟩

• Communication dans un congrès

Evaluation of a tunnel ground to train UWB communication

H. Saghir, M. Heddebaut, F. Elbahhar, Jean-Michel Rouvaen

2006, pp.1-5. ⟨hal-00147735⟩

• Article dans une revue

Interfaces between gamma-Al2O3 and silicon

Pierre Boulenc, Isabelle Devos

As the epitaxy of crystalline LaAlO3 has not been realized yet, we investigated the use of a g-Al2O3 buffer layer between the high-k and the substrate. We firstly studied the structural matching of g-Al2O3(0 0 1) with a Si(0 0 1)-pð2 1Þ reconstructed surface. According to experimental data and…

Materials Science in Semiconductor Processing, 2006, 9 (6), pp.949-953. ⟨10.1016/j.mssp.2006.10.043⟩. ⟨hal-00152970⟩

• Article dans une revue

Spectral characterisation of monolithic modelocked lasers for mm-wave generation and signal processing

P. Acedo, H. Lamela, S. Garidel, C. Roda, Jean-Pierre Vilcot, G. Carpintero, I.H. White, K.A. Williams, M. Thompson, W. Li, M. Pessa, M. Dumitrescu, S. Hansmann

Electronics Letters, 2006, 42, pp.928-929. ⟨hal-00154943⟩

• Article dans une revue

TEM characterisation of the erbium silicide formation process using a Pt/Er stack on the silicon-on-insulator substrate

A. Łaszcz, J. Katcki, J. Ratajczak, Xing Tang, Emmanuel Dubois

Very thin erbium silicide layers have been used as source and drain contacts to n-type Si in low Schottky barrier MOSFETs on silicon-on-insulator substrates. Erbium silicide is formed by a solid-state reaction between the metal and silicon during annealing. The influence of annealing temperature (…

Journal of Microscopy, 2006, 224 (1), pp.38-41. ⟨10.1111/j.1365-2818.2006.01653.x⟩. ⟨hal-00138660⟩