Publications

• Communication dans un congrès

High power performances of AlGaN/GaN HEMTs on sapphire substrate at F=4 GHz

N. Vellas, Christophe Gaquière, Y. Guhel, M. Werquin, D. Ducatteau, B. Boudart, Jean-Claude de Jaeger, Z. Bougrioua, Marie Germain, M. Leys, I. Moervan, S. Borghs

2002, 4 pp. ⟨hal-00149700⟩

• Article dans une revue

High linearity performance of gallium nitride HEMT devices on silicon substrate at 4 GHz

Nicolas Vellas, Christophe Gaquière, Yannick Guhel, Matthieu Werquin, Frédéric Bue-Erkmen, Sylvain Laurent Delage, B. Boudart, Fabrice Semond, Jean-Claude de Jaeger

In this letter, we demonstrate that, for high linearity application, GaN devices benefit from their high drain-source bias voltages. An improvement up to 20 dB in intermodulation ratio can be observed at high power levels compared to usual GaAs PHEMT devices. This study demonstrates that the high…

IEEE Electron Device Letters, 2002, 23 (8), pp.461-463. ⟨10.1109/LED.2002.801328⟩. ⟨hal-00149698⟩

• Communication dans un congrès

32-QAM radio transmission over multimode fibre beyond the fiber bandwidth

D. Wake, Samuel Dupont, Jean-Pierre Vilcot, A.J. Seeds

2002, 4 pp. ⟨hal-00149639⟩

• Article dans une revue

Low Schottky barrier source/drain for advanced MOS architecture : device design and material consideration

Emmanuel Dubois, G. Larrieu

An alternative MOSFET architecture based on the use of low barrier Schottky source/drain (S/D) contacts coupled to a thin silicon-on-insulator (SOI) film is described. Two-dimensional device simulations are used to demonstrate the advantage of low Schottky barrier S/D over conventional implanted…

Solid-State Electronics, 2002, 46 (7), pp.997-1004. ⟨10.1016/S0038-1101(02)00033-3⟩. ⟨hal-00148735⟩

• Article dans une revue

Ferroelectric (116) SrBi2Nb2O9 thin films epitaxially grown by pulsed laser deposition on epitaxial (110) Pt/(110) SrTiO3 electrode

Jean-René Duclere, Maryline Guilloux-Viry, A. Perrin, Eric Cattan, Caroline Soyer, Denis Remiens

Epitaxial SrBi2Nb2O9 thin films have been grown by pulsed-laser deposition on (110)Pt bottom electrode epitaxially grown on (110) SrTiO3 by dc sputtering. X-ray φ-scans and electron channeling patterns reveal the epitaxial growth of the (116) SrBi2Nb2O9/(110)Pt bilayers. The hysteresis loop,…

Applied Physics Letters, 2002, 81 (11), pp.2067-2069. ⟨10.1063/1.1504179⟩. ⟨hal-00149629⟩

• Article dans une revue

Characterization method of film-shaped materials. Pressure effect measurement on the electromagnetic properties into an absorbent material of compressed powder

J. Hinojosa, K. Lmimouni

AEÜ - International Journal of Electronics and Communications = Archiv für Elektronik und Übertragungstechnik, 2002, 56, pp.211-214. ⟨hal-00148716⟩

• Communication dans un congrès

Modulateur acousto-optique à puits quantiques

F. Sainte-Rose, Joseph Gazalet, Jean-Etienne Lefebvre, Tadeusz Gryba

6ème Congrès Français d'Acoustique, CFA 2002, 2002, France. pp.289-291. ⟨hal-00250197⟩

• Communication dans un congrès

Mesure de l'atténuation des ondes ultrasonores dans un milieu fortement absorbant

M. Goueygou, Bogdan Piwakowski, S. Ould Naffa, F. Buyle-Bodin

Actes du 6ème Congrès Français d'Acoustique, CFA 2002, 2002, Lille, France. ⟨hal-00250222⟩

• Communication dans un congrès

Size effects in capped ceramic underwater sound projectors

R.E. Newnham, A. Dogan, D.C. Markley, J.F. Tressler, J. Zhang, E. Uzgur, R.J. Meyer, Anne-Christine Hladky, W.J. Hughes

2002, pp.2315-2321. ⟨hal-00147772⟩

• Communication dans un congrès

Numerical homogenization of piezocomposites - Application to 1-3 piezocomposite

E. Lenglet, Anne-Christine Hladky, J.C. Debus

2002 US Navy Workshop on Acoustic Transduction Materials and Devices, 2002, Baltimore, MD, United States. ⟨hal-00147785⟩