Publications

Affichage de 7271 à 7280 sur 16545


  • Proceedings/Recueil des communications

Note sulle Fortificazioni nei Quesiti di Tartaglia. Libro Sesto e sua Gionta (Notes on Fortifications in the Tartaglia Questions. Book Sixth and his Gionta)

Raffaele Pisano

Proceedings of the 5th History of Engineering Conference, II, Cuzzolin, pp.815-825, 2014, 978-88-87479-11-9. ⟨hal-04517933⟩

  • Article dans une revue

Sub-THz characterisation of multi-walled carbon nanotube thin films using vector network analyser

S. Puthukodan, E. Dadrasnia, V.K.T. Vinod, H.K. Nguendon, H. Lamela, Guillaume Ducournau, Jean-Francois Lampin, F. Garet, J.L. Coutaz, D.M. Lee, S. Baik

A vector network analyser is used to study the electrical properties of multi-walled carbon nanotube (MWCNT) thin films deposited on a fused quartz substrate in the sub-terahertz (THz) frequency ranges of 220-325 GHz (WR3.4) and 325-500 GHz (WR2.2). The experiment is performed in free space. The…

Electronics Letters, 2014, 50, pp.297-299. ⟨10.1049/el.2013.4136⟩. ⟨hal-00954474⟩

  • Communication dans un congrès

Effects of deposition parameters on the composition of Cu(In,Ga)Se2 thin films deposited by magnetron pulse DC sputtering from a single quaternary target

Thomas Aviles, Jean-Pierre Vilcot

5th Photovoltaic Technical Conference 'Thin Film and Advanced Silicon Solutions', PVTC 2014, 2014, Aix-en-Provence, France. ⟨hal-00989529⟩

  • Article dans une revue

On the equivalence of thermodynamics ensembles for flexible polymer chains

F. Manca, Stefano Giordano, Pier Luca Palla, F. Cleri

Physica A: Statistical Mechanics and its Applications, 2014, 395, pp.154-170. ⟨10.1016/j.physa.2013.10.042⟩. ⟨hal-00913580⟩

  • Communication dans un congrès

Interfacial strength of InP/Si substructure

Éric Le Bourhis, Konstantinos Pantzas, Gilles Patriarche, Isabelle Sagnes, David Troadec, Anne Talneau

16th International Conference on Experimental Mechanics, ICEM16, 2014, Cambridge, United Kingdom. 2 p. ⟨hal-00992686⟩

  • Communication dans un congrès

Influence of an interfacial AlxIn1-xSb layer on the strain relaxation and surface morphology of thin GaSb layers epitaxially grown on GaAs(001)

Mathieu Danoy, Pierre-François Angry, Julien Gavrel, Charlène Brillard, L. Desplanque, Y. Wang, P. Ruterana, Xavier Wallart

This work focuses on the strain relaxation and surface morphology of 10 ML thick GaSb layers on GaAs. It is shown that full relaxation is never reached for this thickness. The use of an AlSb interfacial layer only slightly improves strain relaxation but greatly reduces surface roughness. Finally,…

26th International Conference on Indium Phosphide and Related Materials, IPRM 2014, Compound Semiconductor Week, CSW 2014, 2014, Montpellier, France. ⟨hal-00992670⟩