Publications

Affichage de 7291 à 7300 sur 16545


  • Article dans une revue

1900 V, 1.6 mΩ cm2 AlN/GaN-on-Si power devices realized by local substrate removal

Nicolas Herbecq, Isabelle Roch-Jeune, Nathalie Rolland, Domenica Visalli, Joff Derluyn, Stefan Degroote, Marianne Germain, F Medjdoub

We demonstrate a high-voltage low on-resistance AlN/GaN/AlGaN double heterostructure grown by metal-organic chemical vapor deposition on a silicon (111) substrate using a total buffer thickness of less than 2 μm. A fully scalable local substrate removal technique was developed to dramatically…

Japanese Journal of Applied Physics, part 2 : Letters, 2014, 7 (3), 034103, 3 p. ⟨10.7567/APEX.7.034103⟩. ⟨hal-00950148⟩

  • Communication dans un congrès

From semiconductor nanocrystals to artificial graphene and topological insulator

Efterpi Kalesaki, Christophe Delerue, Cristiane Morais Smith, Wouter Beugeling, Guy Allan, Daniel Vanmaekelbergh

Recent advancements in colloidal chemistry indicate that two-dimensional single-crystalline sheets of semiconductors forming a honeycomb lattice can be synthesized from semiconductor nanocrystals [1]. We perform atomistic tight-binding calculations of the band structure of CdSe sheets with such a…

European Materials Research Society Spring Meeting, E-MRS Spring 2014, Symposium F - Established and emerging nanocolloids : from synthesis & characterization to applications, 2014, Lille, France. ⟨hal-00966143⟩

  • Article dans une revue

Inkjet coplanar square monopole on flexible substrate for 60-GHz applications

Aimeric Bisognin, Julien Thielleux, Wei Wei, Diane Titz, Fabien Ferrero, Patrice Brachat, Gilles Jacquemod, Henri Happy, Cyril Luxey

In this letter, the design, fabrication, and measurement of a 60-GHz printed antenna with inkjet technology over a flexible substrate is presented. The antenna is a coplanar square monopole with omnidirectional radiation characteristics. We especially measured a 68% total efficiency and a maximum…

IEEE Antennas and Wireless Propagation Letters, 2014, 13, pp.435-438. ⟨10.1109/LAWP.2014.2309603⟩. ⟨hal-00978298⟩

  • Communication dans un congrès

Graphene field effect transistors on SiC with T-shaped gate : homogeneity and RF performance

Mohamed Salah Khenissa, D. Mele, Mohamed Moez Belhaj, Ivy Colambo, Emiliano Pallecchi, Dominique Vignaud, Henri Happy

4th Graphene Conference, Graphene 2014, May 2014, Toulouse, France. 2 p. ⟨hal-00962375⟩

  • Communication dans un congrès

Simulation and comparative study of graphene field effect transistor using ISE TCAD

B. Hafsi, A. Boubaker, N. Ismail, A. Kalboussi, Dominique Vuillaume, Kamal Lmimouni

7th International Conference on Molecular Electronics, ElecMol14, 2014, Strasbourg, France. ⟨hal-01055036⟩

  • Communication dans un congrès

CIGSe absorber layers deposition by single target magnetron sputtering

R. Meunier, S. Fabert, M. Ricci, P.Y. Thoulon, Thomas Aviles, Jean-Pierre Vilcot, Alain Lafond, Michèle Carette, Pierre-Yves Jouan, Marie-Paule Besland

In the last decades, the deposition of CIGSe thin films by sputtering has seldom been investigated. Besides, the sputtering of a single quaternary CIGSe target would be a real advantage for industrial development. Indeed, sputtering technique exhibits a good compatibility with industrial up-scaling…

European Materials Research Society Spring Meeting, E-MRS Spring 2014, Symposium A - Thin film chalcogenide photovoltaic materials, 2014, Lille, France. ⟨hal-00964175⟩