Publications

• Communication dans un congrès

Electrical characterization of semiconductor nanowires by scanning tunneling microscopy

Corentin Durand, Pierre Capiod, Maxime Berthe, Tao Xu, Jean-Philippe Nys, Renaud Leturcq, Philippe Caroff, B. Grandidier

In order to understand the structural and electronic properties of semiconductor nanowires, scanning tunneling microscopy is an appealing technique that can supplement transmission electron microscopies and conventional electrical characterization techniques. It is able to probe the surface of…

SPIE Photonics West, OPTO, Conference 8996 - Quantum Dots and Nanostructures : Synthesis, Characterization, and Modeling XI, 2014, San Francisco, CA, United States. 89960E, 10 p., ⟨10.1117/12.2042767⟩. ⟨hal-00974539⟩

• Communication dans un congrès

Experimental demonstration of anomalous nonreciprocal optical response of 1D periodic magnetoplasmonic nanostructures

L. Halagacka, Mathias Vanwolleghem, Francois Vaurette, Jamal Ben Youssef, Philippe Gogol, N. Yam, K. Postava, B. Dagens, J. Pistora

In this paper we analyze the optical and transversal magnetooptical (MO) response of magnetoplasmonic (MP) nanostructures. The MP structure is a 1D periodic gold grating fabricated by lift-off technique on the MO dielectric substrate (Bi-substituted yttrium iron garnet BixY3−xFe5O12). Following our…

SPIE Photonics West, OPTO 2014, Conference 8988 - Integrated Optics : Devices, Materials, and Technologies XVIII, 2014, San Francisco, CA, United States. 89880E, 6 p., ⟨10.1117/12.2039450⟩. ⟨hal-00962382⟩

• Communication dans un congrès

Back-gated microwave field-effect transistors based on transferred CVD-grown graphene

Wei Wei, Mohamed Moez Belhaj, Geetanjali Deokar, D. Mele, Emiliano Pallecchi, Emmanuelle Pichonat, Dominique Vignaud, Henri Happy

Graphene based transistors have drawn growing interest from both industries and Laboratories [1-3]. In this work, we present both fabrication process and characterization of graphene field-effect transistors. Large scale monolayer graphene was grown by chemical vapor deposition (CVD) on Cu foils…

4th Graphene Conference, Graphene 2014, May 2014, Toulouse, France. 2 p. ⟨hal-00962381⟩

• Communication dans un congrès

Redox-coated nanoelectrode array : when molecular electronics meets electrochemistry

Jorge Trasobares, R. Sivakumarasamy, C. Whal, Francois Vaurette, T. Martin, Jean-Philippe Nys, Dominique Vuillaume, Didier Theron, Nicolas Clément

7th International Conference on Molecular Electronics, ElecMol14, 2014, Strasbourg, France. ⟨hal-01055038⟩

• Communication dans un congrès

Ion-beam effect on functional properties of La2Ti2O7 piezoelectric thin films and nanoislands

A. Ferri, S. Saitzek, Z. Shao, A. Bayart, G. Declercq, Jean Costecalde, Denis Remiens, D. Deresmes, David Troadec, Rachel Desfeux

Low-dimensional material can display unique physical phenomena allowing an interesting way for the development of new technologies. In addition, owing the environmental requirements about electronic devices (ferroelectric memories, M/NEMS...), new lead-free piezoelectrics need to be created. In…

European Materials Research Society Spring Meeting, E-MRS Spring 2014, Symposium I - Solution processing and properties of functional oxide thin films and nanostructures, 2014, Lille, France. ⟨hal-00964120⟩

• Communication dans un congrès

Electrical and chemical studies on Al2O3 passivation activation process

Matthieu Pawlik, Jean-Pierre Vilcot, Mathieu Halbwax, D. Aureau, A. Etcheberry, A. Slaoui, T. Schutz-Kuchly, R. Cabal

Passivation process is a key feature to improve the efficiency of silicon solar cells. So far, a 20nm-thick layer of Al2O3 grown by Plasma Enhanced Atomic Layer Deposition (PE-ALD) followed by a 450°C anneal during 15 to 30 min gives the best results in surface carrier recombination velocities on p…

European Materials Research Society Spring Meeting, E-MRS Spring 2014, Symposium Y - Advanced materials and characterization techniques for solar cells II, 2014, Lille, France. ⟨hal-00964247⟩

• Communication dans un congrès

High polarization high breakdown voltage AlN/GaN-on-silicon transistors

Nicolas Herbecq, Isabelle Roch-Jeune, F Medjdoub

We have developed a back-side process on AlN/GaN-on-Si DHFETs in order to drastically enhance their electrical performances. With a buffer thickness of 1.8 μm, the Si substrate has been locally etched up to the buffer layers between the drain and the gate. After local silicon removal, the three-…

38th Workshop on Compound Semiconductor Devices and Integrated Circuits in Europe, WOCSDICE 2014, 2014, Delphi, Greece. 2 p. ⟨hal-01006455⟩

• Article dans une revue

Longitudinal and transversal polarization switching in strained ferroelectrics

Laurent Baudry, Igor A. Luk'Yanchuk, A. Razumnaya

Using the multicomponent Landau-Devonshire functional we study the field-induced polarization switching in c-oriented ferroelectric phase of epitaxial perovskite film and found that two different regimes are possible: (i) longitudinal switching with change of the polarization modulus and (ii)…

Ferroelectrics, 2014, 13th International Meeting on Ferroelectricity, 461 (1), pp.22-28. ⟨10.1080/00150193.2014.889528⟩. ⟨hal-01044688⟩

• Communication dans un congrès

Etude de réseaux diffuseurs pour l'acoustique sous-marine

Y. Renou, P. Constant, C. Audoly, Christian Granger

12ème Congrès Français d'Acoustique, CFA 2014, 2014, Poitiers, France. ⟨hal-00978404⟩

• Communication dans un congrès

Développement de capteurs interdigités souples pour le contrôle de structures

Rafatou Takpara, Dame Fall, Marc Duquennoy, Christian Courtois, Mohamed Rguiti, Laurent Seronveaux, D. Monnoye, Gregory Martic, Véronique Lardot, M. Gonon, N. Maury, Christine Pelegris, M. Guessasma, N. Ferguen, E. Bellenger

12ème Congrès Français d'Acoustique, CFA 2014, 2014, Poitiers, France. Session APUS2-2 : Contrôles et essais non-destructifs II, papier CFA2014/327, 536-539. ⟨hal-00978411⟩