Publications

Affichage de 7351 à 7360 sur 16545


  • Communication dans un congrès

Synthesis, characterization, and computer simulation of self-assembled Au nanoparticles with memristive behavior

F. Cleri, S. Carrillo, Christophe Krzeminski, Yannick Viero, S. Lenfant, David Guérin, D. Vuillaume

XXVIII International Winterschool on Electronic Properties of Novel Materials, IWEPNM 2014, 2014, Kirchberg, Austria. ⟨hal-00957805⟩

  • Communication dans un congrès

[Invited] 3D substrates for improved performance of Li-ion microbatteries

Etienne Eustache, Olivier Crosnier, Pascal Tilmant, Laurence Morgenroth, Pascal Roussel, Nathalie Rolland, Christophe Lethien, Thierry Brousse

10th Japan-France Joint Seminar on Battery, 2014, Hakone, Japan. ⟨hal-01044691⟩

  • Article dans une revue

Enhancing LSPR sensitivity of Au gratings through graphene coupling to Au film

Thomas Maurer, Rana Nicolas, Gaëtan Lévêque, P. Subramanian, Julien Proust, Jérémie Béal, Silvere Schuermans, Jean-Pierre Vilcot, Z. Herro, M. Kazan, Jerome Plain, Rabah Boukherroub, Abdellatif Akjouj, Bahram Djafari-Rouhani, Pierre-Michel Adam, Sabine Szunerits

A particular interesting plasmonic system is that of metallic nanostructures interacting with metal films. As the localized surface plasmon resonance (LSPR) behavior of gold nanostructures (Au NPs) on the top of a gold thin film is exquisitely sensitive to the spacer distance of the film-Au NPs, we…

Plasmonics, 2014, 9, pp.507-512. ⟨10.1007/s11468-013-9649-0⟩. ⟨hal-00994804⟩

  • Communication dans un congrès

Phosphorus-hyperdoped Si nanocrystals : a model for localized surface plasmon resonance

X. Pi, Christophe Delerue

It has been recently realized that semiconductor nanocrystals can be doped with point defects or impurities up to a very high level, sometimes above the bulk solubility limit. In parallel, hyperdoping has also emerged as a promising means to change the electrical and optical properties of Si. In…

European Materials Research Society Spring Meeting, E-MRS Spring 2014, Symposium X - Materials research for group IV semiconductors : growth, characterization and technological developments, 2014, Lille, France. ⟨hal-00961394⟩

  • Communication dans un congrès

Croissance localisée d'InAs par épitaxie par jets moléculaires

Maria Fahed, L. Desplanque, Xavier Wallart

Ce travail porte sur l'étude de la croissance localisée d'InAs sur InAs déposé par épitaxie par jets moléculaires (EJM). Nous présentons la caractérisation de la morphologie des surfaces par microscopie électronique à balayage (MEB).

17èmes Journées Nationales du Réseau Doctoral en Micro-Nanoélectronique, JNRDM 2014, 2014, Villeneuve d'Ascq, France. 3 p. ⟨hal-01018426⟩

  • Communication dans un congrès

InAs based Esaki tunnel diodes

Vinay Kumar Chinni, L. Desplanque, Mohamed Zaknoune, Xavier Wallart

We present simulation results of InAs based Esaki tunnel diodes. InAs homojunction and InAs/AlGaSb heterojunction are considered and we investigate the role of source and drain doping levels as well as band energy discontinuities on the tunneling current of the device. The results are very…

17èmes Journées Nationales du Réseau Doctoral en Micro-Nanoélectronique, JNRDM 2014, 2014, Villeneuve d'Ascq, France. 3 p. ⟨hal-01018430⟩