Publications

• Communication dans un congrès

Dual phononic and photonic strip waveguides

Yan Pennec

SPIE 2012 Photonics West, Photonic and Phononic Properties of Engineered Nanostructures II, 2012, San Francisco, CA, United States. ⟨hal-00798098⟩

• Communication dans un congrès

Phononic and phoxonic crystal slabs sensors

Bahram Djafari-Rouhani, Yan Pennec, R. Lucklum

SPIE Photonics Europe, Photonic Crystal Materials and Devices, 2012, Brussels, Belgium. ⟨hal-00798094⟩

• Communication dans un congrès

Growth kinetic studies of graphene on Cu foils

E. Pichonat, R. Fleurier, D. Vignaud, H. Happy

IEEE Topical Symposium on RF Nanotechnology, Asia-Pacific EMC Week, APEMC 2012, 2012, Sentosa Island, Singapore. ⟨hal-00815030⟩

• Autre publication scientifique

Advances in Historical Studies [Editor in Chief 1/1]

Raffaele Pisano

2012. ⟨hal-04511057⟩

• Article dans une revue

Elastic behaviour of inhomogeneities with size and shape different from their hosting cavities

S. Giordano, Pier Luca Palla, E. Cadelano, M. Brun

Mechanics of Materials, 2012, 44, pp.4-22. ⟨10.1016/j.mechmat.2011.07.015⟩. ⟨hal-00639826⟩

• Proceedings/Recueil des communications

LT GaAs nanophotoswitches for microwave sampling

Didier Decoster, Antoine Pagies, Jean-Francois Lampin, X. Wallart, Vincent Magnin, Joseph Harari, Charlotte Tripon-Canseliet, S. Faci, Stéphane Formont, Loic Ménager, Jean Chazelas, Guy Jestin

SPIE 2012 Photonics West, Quantum Sensing and Nanophotonic Devices IX, 8268-83, 2012. ⟨hal-04444977⟩

• Article dans une revue

Dual-purpose BGaN layers on performance of nitride-based high electron mobility transistors

Vinod Ravindran, Mohamed Boucherit, Ali Soltani, Simon Gautier, Tarik Moudakir, Jeramy Dickerson, Paul L. Voss, Marie-Antoinette Di Forte-Poisson, Jean-Claude de Jaeger, Abdallah Ougazzaden

A GaN/ultrathin BGaN/GaN heterojunction is used in AlGaN/GaN high electron mobility transistors (HEMTs) to provide an electrostatic barrier to electrons and to improve the confinement of the 2-dimensional electron gas. BGaN back-barrier layers limit leakage in the GaN buffer thanks to two effects:…

Applied Physics Letters, 2012, 100, pp.243503-1-4. ⟨10.1063/1.4729154⟩. ⟨hal-00787871⟩

• Communication dans un congrès

Magnetostatic micro-actuator based on ultrasoft elastomeric membrane and copper-permalloy electrodeposited structures

Jérémy Streque, Abdelkrim Talbi, Clément Bonnerot, Philippe Pernod, Vladimir Preobrazhensky

This paper presents different designs of magnetostatic micro-actuators, based on both conventional and integrated micro-coils. A 3-dimensional magnetic circuit made of Permalloy is proposed in order to improve their efficiency. The mobile parts of the micro-actuators are made of ultrasoft…

25th IEEE Conference on Micro Electro Mechanical Systems, MEMS 2012, 2012, Paris, France. pp.1157-1160, ⟨10.1109/MEMSYS.2012.6170368⟩. ⟨hal-00801090⟩

• Article dans une revue

Demonstration of defect-free and composition tunable GaxIn1-xSb nanowires

S. Gorji Ghalamestani, M. Ek, B. Ganjipour, C. Thelander, J. Johansson, P. Caroff, K.A. Dick

Nano Letters, 2012, 12, pp.4914-4919. ⟨10.1021/nl302497r⟩. ⟨hal-00786991⟩

• Article dans une revue

A 7-bit 18th order 9.6 GS/s FIR up-sampling filter for high data rate 60-GHz wireless transmitters

J. Muller, B. Stefanelli, A. Frappe, L. Ye, A. Cathelin, A. Niknejad, A. Kaiser

IEEE Journal of Solid-State Circuits, 2012, 47, pp.1743-1756. ⟨10.1109/JSSC.2012.2191677⟩. ⟨hal-00787386⟩