Publications

• Communication dans un congrès

Impact of chromatic and modal dispersion on frequency response of optical multimode fibers

H. Mrabet, Iyad Dayoub, R. Attia, N. Al-Holou, C. Tatkeu

IEEE Symposium on Computers and Communications, ISCC'09, 2009, Tunisia. pp.188-194, ⟨10.1109/ISCC.2009.5202360⟩. ⟨hal-00474132⟩

• Article dans une revue

Turning carbon nanotubes from exceptional heat conductors into insulators

R.S. Prasher, X.J. Hu, Yann Chalopin, N. Mingo, K. Lofgreen, S. Volz, F. Cleri, P. Keblinski

Physical Review Letters, 2009, 102, pp.105901-1-4. ⟨10.1103/PhysRevLett.102.105901⟩. ⟨hal-00473378⟩

• Article dans une revue

The collagen assisted self-assembly of silicon nanowires

B. Salhi, Francois Vaurette, B. Grandidier, D. Stievenard, O. Melnyk, Yannick Coffinier, Rabah Boukherroub

Nanotechnology, 2009, 20, pp.235601-1-6. ⟨10.1088/0957-4484/20/23/235601⟩. ⟨hal-00473380⟩

• Article dans une revue

Issues associated to rare earth silicide integration in ultra thin FD SOI Schottky barrier nMOSFETs

G. Larrieu, Dmitri Yarekha, Emmanuel Dubois, D. Deresmes, N. Breil, N. Reckinger, Xing Tang, A. Halimaoui

The paper focuses on specific issues associated to rare earth silicide integration on UTB-SOI substrate with a particular attention to erbium and ytterbium silicides. Due to the limited Si source, defects generation on SOI is prevented compared to bulk substrate. Reaction of RE with dielectric…

ECS Transactions, 2009, 19 (4), pp.201-207. ⟨10.1149/1.3117410⟩. ⟨hal-00471998⟩

• Article dans une revue

Low sensitivity to temperature compressive-strained structure quantum well laser Ga1-xInxAs1-yNy/GaAs

Abdelkader Aissat, Said Nacer, Messaoud Bensebti, Jean-Pierre Vilcot

The objective is to exploit the properties of the GaInNAs/GaAs alloy compressive strain structure to design a laser diode likely to meet the needs of optical communications. Modelling concerns mainly the study of the potentialities of thermal stability and dynamic response offered by these new…

Microelectronics Journal, 2009, 40, pp.10-14. ⟨10.1016/j.mejo.2008.09.005⟩. ⟨hal-00473042⟩

• Article dans une revue

Assessment of carrier-multiplication efficiency in bulk PbSe and PbS

Joep J. H. Pijpers, Ronald Ulbricht, Klaas-Jan Tielrooij, A. Osherov, Y. Golan, Christophe Delerue, Guy Allan, Mischa Bonn

One of the important factors limiting solar-cell efficiency is that incident photons generate one electron–hole pair, irrespective of the photon energy. Any excess photon energy is lost as heat. The possible generation of multiple charge carriers per photon (carrier multiplication) is therefore of…

Nature Physics, 2009, 5, pp.811-814. ⟨10.1038/nphys1393⟩. ⟨hal-00473076⟩

• Article dans une revue

Tunable room temperature terahertz sources based on two dimensional plasma instability in GaN HEMTs

A. El Fatimy, T. Suemitsu, T. Otsuji, N. Dyakonova, W. Knap, Y.M. Meziani, S. Vandenbrouk, K. Madjour, D. Theron, Christophe Gaquière, P. Prystawko, C. Skierbiszewski

Journal of Physics: Conference Series, 2009, 193, pp.012072-1-4. ⟨10.1088/1742-6596/193/1/012072⟩. ⟨hal-00473645⟩

• Article dans une revue

InAlN/GaN MOSHEMT with self-aligned thermally generated oxide recess

M. Alomari, F Medjdoub, J.F. Carlin, E. Feltin, N. Grandjean, A. Chuvilin, U. Kaiser, Christophe Gaquière, E. Kohn

IEEE Electron Device Letters, 2009, 30, pp.1131-1133. ⟨10.1109/LED.2009.2031659⟩. ⟨hal-00473634⟩

• Article dans une revue

Ultrathin InAlN/AlN barrier HEMT with high performance in normally off operation

C. Ostermaier, G. Pozzovivo, J.F. Carlin, B. Basnar, W. Schrenk, Y. Douvry, Christophe Gaquière, J.C. Dejaeger, K. Cico, K. Frohlich, M. Gonschorek, N. Grandjean, G. Strasser, D. Pogany, J. Kuzmik

IEEE Electron Device Letters, 2009, 30, pp.1030-1032. ⟨10.1109/LED.2009.2029532⟩. ⟨hal-00473635⟩

• Article dans une revue

Physical analysis of thermal effects on the optimization of GaN Gunn diodes

Xing Tang, Michel Rousseau, Christophe Dalle, Jean-Claude de Jaeger

Applied Physics Letters, 2009, 95, pp.142102-1-3. ⟨10.1063/1.3240873⟩. ⟨hal-00473636⟩