Publications

• Article dans une revue

Experimental and theoretical investigation of terahertz optical-beating detection by plasma waves in high electron mobility transistors

H. Marinchio, J. Torres, G. Sabatini, P. Nouvel, C. Palermo, Laurent Chusseau, L. Varani, F. Teppe, P. Shiktorov, E. Starikov, V. Gruzinskis, A. Shchepetov, S. Bollaert, Yannick Roelens

A photomixed laser beam of two 1.55 μm lasers is used to obtain interband photoexcitation at the difference frequency and at room temperature in suvmicron gate length INAIA/InGaAs transistors. Results show the clear excitation of plasma oscillation modes in the transistors channel Fundamental…

Physica Status Solidi C: Current Topics in Solid State Physics, 2008, 5 (1), pp.257-260. ⟨10.1002/pssc.200776572⟩. ⟨hal-00327410⟩

• Communication dans un congrès

Molecular dynamics simulation of the recrystallization of disordered Si layers

E. Lampin, Christophe Krzeminski

Workshop SiMaDes-II, Atomic scale simulations and experimental studies of disordered systems, 2008, Grenoble, France. ⟨hal-00361542⟩

• Ouvrages

Scienze e Religioni. Il ruolo delle scienze naturali, ipotesi di studio e prospettive (Sciences and Religions. The role of natural sciences, study hypotheses and perspectives)

Rafel Pascual, Raffaele Pisano

• Article dans une revue

Comparative Sb and As segregation at the InP on GaAsSb interface

X. Wallart, S. Godey, Y. Douvry, L. Desplanque

Applied Physics Letters, 2008, 93, pp.123119-1-3. ⟨10.1063/1.2991299⟩. ⟨hal-00356947⟩

• Article dans une revue

Molecular-scale electronics

D. Vuillaume

Comptes Rendus. Physique, 2008, 9, pp.78-94. ⟨10.1016/j.crhy.2007.10.014⟩. ⟨hal-00357286⟩

• Article dans une revue

Passive photonic components using InP optical wire technology

Marie Lesecq, Sophie Maricot, Jean-Pierre Vilcot, Maxime Beaugeois

The authors present the design, fabrication and characterisation of passive photonic components using InP optical wire technology. These components are straight and curved waveguides as well as Y-junctions. Their ultimate use is to be integrated within active nanophotonic functions and this is…

IET Optoelectronics, 2008, 2, pp.69-75. ⟨10.1049/iet-opt:20060104⟩. ⟨hal-00357302⟩

• Article dans une revue

Self-assembly of the 3-aminopropyltrimethoxysilane multilayers on Si and hysteretic current-voltage characteristics

A.K. Chauhan, D.K. Aswal, S.P. Koiry, S.K. Gupta, J.V. Yakhmi, C. Sürgers, David Guérin, S. Lenfant, D. Vuillaume

Applied physics. A, Materials science & processing, 2008, 90, pp.581-589. ⟨10.1007/s00339-007-4336-7⟩. ⟨hal-00357287⟩

• Article dans une revue

Band-edge photoluminescence and reflectivity of nonpolar (11-20) and semipolar (11-22) GaN formed by epitaxial lateral overgrowth on sapphire

T. Gühne, Z. Bougrioua, S. Laügt, M. Nemoz, P. Vennegues, B. Vinter, M. Leroux

Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2008, 77, pp.075308-1-10. ⟨10.1103/PhysRevB.77.075308⟩. ⟨hal-00356987⟩

• Article dans une revue

Symmetrical frequency response in a split ring resonator based transmission line

Alejandro Borja, Jorge Carbonell, Vicente Boria, Didier Lippens

A coplanar waveguide line based on a split ring resonator technology and loaded with metallic strips and capacitances is proposed. The addition of series capacitances to previous unit cell implementations dramatically improves the upper band rejection levels and provides a transmission response…

Applied Physics Letters, 2008, 93 (20), pp.203505-1-3. ⟨10.1063/1.3025625⟩. ⟨hal-00356934⟩

• Article dans une revue

Resistivity and surface states density of n and p type silicon nanowires

Francois Vaurette, J.P. Nys, D. Deresmes, B. Grandidier, D. Stiévenard

Journal of Vacuum Science and Technology, 2008, 26, pp.945-948. ⟨10.1116/1.2908438⟩. ⟨hal-00357381⟩