Publications

• Article dans une revue

Combined annealing temperature and thickness effects on properties of PbZr0.53Ti0.47O3 films on LaNiO3/Si substrate by sol-gel process

Gang Wang, Denis Remiens, Caroline Soyer

Journal of Crystal Growth, 2006, 293, pp.370-375. ⟨hal-00138712⟩

• Communication dans un congrès

Wafer bonding process for III-V nanowires in BCB high index contrast waveguides

Michel Carette, D. Lauvernier, Jean-Pierre Vilcot, D. Bernard, Didier Decoster

WAPITI/PICMOS Workshop on III/V photonic components 3 dimensional integration, 2006, Halle, Germany. ⟨hal-00138907⟩

• Communication dans un congrès

Fabrication de nanofils optiques à fort contraste d'indice en semiconducteur III-V (GaAs ou InP)/Benzocycobutène(BCB)

Michèle Carette, D. Lauvernier

9èmes Journées Nationales du Réseau Doctoral en Microélectronique, 2006, Rennes, France. ⟨hal-00138905⟩

• Communication dans un congrès

Study of Lamb modes behaviour with a simplified damage

Farouk Benmeddour, Faysal El Youbi, Emmanuel Moulin, Jamal Assaad

Anglo-French Physical Acoustics Conference, AFPAC'06, 2006, Wye, United Kingdom. ⟨hal-00138734⟩

• Communication dans un congrès

Finite element and experimental analysis to characterize and minimize the influence of surface bonded transducers on the Lamb wave propagation

Faysal El Youbi, Jamal Assaad, Farouk Benmeddour, Sébastien Grondel

Anglo-French Physical Acoustics Conference, AFPAC'06, 2006, Wye, United Kingdom. ⟨hal-00138728⟩

• Communication dans un congrès

Growth of molecular nanostructures on Si using SAMs of long-chain alkytrichlorosilanes

L. Patrone, S. Desbief, D. Goguenheim, D. Vuillaume

Trends in NanoTechnologies, TNT2006, 2006, Grenoble, France. ⟨hal-00127136⟩

• Thèse

Utilisation des technologies CMOS SOI 130 nm pour des applications en gamme de fréquences millimétriques, 130 nm SOI CMOS technology for microwaves applications

Christophe Pavageau

La technologie CMOS SOI (« Silicon On Insulator ») a déjà montré son intérêt pour les circuits numériques par rapport à la technologie CMOS sur substrat massif (« bulk »). Avec l'entrée des technologies CMOS dans l'ère des dimensions nanométriques, les transistors atteignent des…, Silicon On Insulator (SOI) CMOS technology has already shown good performances for digital applications compared to bulk CMOS technology. At nanometer-scale, SOI CMOS transistors exhibit very high cut-off frequencies, enabling the design of millimeter-wave integrated circuits and therefore the…

Micro et nanotechnologies/Microélectronique. Université des Sciences et Technologie de Lille - Lille I, 2005. Français. ⟨NNT : ⟩. ⟨tel-00011744v2⟩

• Communication dans un congrès

About the role played by the principles in the physics and mathematics by J.H. Poincaré

Raffaele Pisano

AIF Workshop Science & Teaching, 6th Dec., AIF Latina & GB Grassi Latina, Dec 2005, Latina, Italy. ⟨hal-04518908⟩

• Article dans une revue

Optimisation of the parameters of an extended defect model applied to non-amorphizing implants

E. Lampin, Fuccio Cristiano, Youness Lamrani, Damien Connétable

In this paper, we present the optimisation of the parameters of a physical model of the kinetics of extended defects and applied the model with the optimised parameters to non-amorphizing implants. The model describes the small clusters, the {113} defects and the dislocation loops. In the first…

Materials Science and Engineering: B, 2005, 124-125, pp.397-400. ⟨10.1016/j.mseb.2005.08.032⟩. ⟨hal-03599806⟩

• Article dans une revue

Planar excitation of Goubau transmission lines for THz BioMEMS

A. Treizebre, Tahsin Akalin, Bertrand Bocquet

We propose and demonstrate an original planar excitation of a single wire transmission line also known as Goubau-Line (G-Line). The excitation is based on an electromagnetic transition between a coplanar waveguide and the desired G-line in a planar configuration. We present some characteristics for…

IEEE Microwave and Wireless Components Letters, 2005, 15 (12), pp.886-888. ⟨10.1109/LMWC.2005.859976⟩. ⟨hal-00147496⟩