Publications

Affichage de 14851 à 14860 sur 16261


  • Article dans une revue

Dielectric, ferroelectric and piezoelectric properties of sputtered PZT thin films on Si substrates : influence of film thickness and orientation

T. Haccart, Eric Cattan, Denis Remiens

Semiconductor Physics, Quantum Electronics & Optoelectronics, 2002, 5, pp.78-88. ⟨hal-00250395⟩

  • Article dans une revue

Electrical and optical characterizations by prism-coupling method of PZT deposited in-situ by sputtering

El Hadj Dogheche, Denis Remiens, G. Velu

Vacuum, 2002, 66, pp.1-8. ⟨hal-00250392⟩

  • Communication dans un congrès

The linearisation of an electrostrictive device for MEMS applications

D. Jenkins, E. Fribourg-Blanc, Eric Cattan, Denis Remiens

13th IEEE International Symposium on Applications of Ferroelectrics, ISAF 2002, 2002, Japan. pp.479-482. ⟨hal-00250396⟩

  • Communication dans un congrès

Luminescence properties of InAs dots grown by molecular beam epitaxy on metamorphic InxAl1-xAs (0.33 < x < 0.52) buffer layers

D. Vignaud, Y. Cordier, P. Miska, D. Ferré

28th International Symposium on Compound Semiconductors, 2002, Japan. pp.537-542. ⟨hal-00250216⟩

  • Communication dans un congrès

Caractérisation de transistors à effet de champ à base de GaN

Christophe Gaquière, Raphaël Aubry, Yannick Guhel, A. Minko, Nicolas Vellas, Matthieu Werquin, B. Boudart, Simone Cassette, Yvon Cordier, Sylvain Laurent Delage, E. Delos, Jean-Claude de Jaeger, Damien Ducatteau, H. Gerard

3ème Ecole Thématique CNRS : Matériaux Nitrures d'Eléments III, 2002, La Plagne, France. ⟨hal-00149714⟩

  • Article dans une revue

Electron-beam-induced reactivation of Si dopants in hydrogenated and deuterated 2D AlGaAs heterostructures. Application to the fabrication of nanostructures

L. Kurowski, S. Silvestre, D. Loridant-Bernard, E. Constant, M. Barbe, Jérome Chevalier, M. Constant

Materials Research Society Symposia Proceedings, 2002, 719, pp.275-281. ⟨hal-00278932⟩

  • Communication dans un congrès

Monte Carlo study of electron transport in AlSb/InAs HEMTS structures

Jean-Luc Thobel, Olivier Bonno, Hervé Boutry, François Dessenne

A Monte Carlo model of in-plane electron transport in InAs/AlSb heterostructures is presented. Special attention has been paid to the effects of nonparabolicity, which are crucial for such a narrow gap system. Electron states are obtained from a Ben Daniel-Duke equation with energy-dependent…

14th Indium Phosphide and Related Materials Conference, May 2002, Stockholm, Sweden. pp.185-188, ⟨10.1109/ICIPRM.2002.1014301⟩. ⟨hal-00148647⟩

  • Communication dans un congrès

Etude de la réactivité des surfaces d'alliages GaInAs (100) à un flux de phosphore

X. Wallart, C. Priester, D. Deresmes, F. Mollot

9èmes Journées Nationales Microélectronique et Optoélectronique, JNMO 2002, 2002, Saint Aygulf, France. ⟨hal-00148676⟩

  • Communication dans un congrès

Organic thin film transistors made on high-k gate insulators

K. Lmimouni, C. Dufour, Denis Remiens, D. Vuillaume

European Materials Research Society Spring Meeting, E-MRS Spring 2002, 2002, Strasbourg, France. ⟨hal-00148715⟩

  • Communication dans un congrès

Supercritical parametric phase conjugation of ultrasound waves. Application in nonlinear acoustic imaging

Philippe Pernod, Vladimir Preobrazhensky, Fedor V. Bunkin, Andrey Brysev, Leonid Krutyansky

International Symposium on Nonlinear Acoustics, Aug 2002, Moscow, Russia. pp.206. ⟨hal-00148685⟩