Publications
Affichage de 14911 à 14920 sur 16261
Fast electromagnetic characterization method of film-shaped materials using coplanar up to V-band
J. Hinojosa, K. Lmimouni, Gilles Dambrine
Electronics Letters, 2002, 38, pp.373-374. ⟨hal-00147838⟩
Modélisation numérique et caractérisation expérimentale du champ de cavitation ultrasonore
P. Mosbah, Bertrand Dubus, O. Ledez, C. Campos-Pozuelo, C. Granger
2002, pp.747-750. ⟨hal-00147777⟩
Design production and testing of PMN-PT electrostrictive transducers
J. Coutte, Bertrand Dubus, J.C. Debus, C. Granger, D. Jones
Ultrasonics, 2002, 40, pp.883-888. ⟨hal-00147756⟩
Design and simulation of a two-section Fabry-Perot sampled grating distributed bragg reflector laser for dense wavelength-division multiplexing applications
M.H. Mourad, D. Marcenac, Jean-Pierre Vilcot, Didier Decoster
Optical Engineering, 2002, 41, pp.479-483. ⟨hal-00149622⟩
MIMO propagation channel models in underground environment
J.F. Pardonche, M. Berbineau, C. Seguinot, M. Lienard
2002, pp.Session SunPmOR1, 1-6. ⟨hal-00149644⟩
Interpretation and theory of tunneling experiments on single nanostructures
Yann-Michel Niquet, Christophe Delerue, Guy Allan, Michel Lannoo
Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2002, 65, pp.165334/1-14. ⟨10.1103/PhysRevB.65.165334⟩. ⟨hal-00149663⟩
Emission basse fréquence par interaction non-linéaire d'ondes ultrasonores
Philippe Pernod, Y. Pylnov, Vladimir Preobrazhensky
Actes du 6ème Congrès Français d'Acoustique, CFA 2002, 2002, Lille, France. ⟨hal-00148704⟩
Measurement of the elastic and viscoelastic properties of dielectric films used in microelectronics
G. Carlotti, P. Colpani, D. Piccolo, S. Santucci, V. Senez, G. Socino, L. Verdini
Thin Solid Films, 2002, 414, pp.99-104. ⟨hal-00148744⟩
Charge transport in some molecular devices : self-assembled molecular rectifiers and DNA molecules
D. Vuillaume
6th Conference on Molecular-Scale Electronics, 2002, Key West, FL, United States. ⟨hal-00148708⟩
Characterization of phosphorus and boron heavily doped LPCVD polysilicon films in the temperature range 293-373K
Mohamed Boutchich, Katir Ziouche, Pascale Godts, Didier Leclercq
IEEE Electron Device Letters, 2002, 23 (3), pp.139-141. ⟨10.1109/55.988817⟩. ⟨hal-00148729⟩