Publications
Affichage de 15111 à 15120 sur 16261
High-speed evanescently coupled PIN photodiodes for hybridisation on silicon platform optimised with genetic algorithm
L. Giraudet, Joseph Harari, V. Magnin, P. Pagnod, E. Boucherez, J. Decobert, J. Bonnet-Gamerd, D. Carpentier, C. Jany, F. Blache, Didier Decoster
Electronics Letters, 2001, 37, pp.973-975. ⟨hal-00152492⟩
60 GHz 420 mW/mm low gate current GaInAs/InP composite channel HEMT on InP substrate
Mustafa Boudrissa, Elisabet Delos, X. Wallart, Didier Theron, Jean-Claude de Jaeger
XXV Workshop on Compound Semiconductor Devices and Integrated Circuits held in Europe, WOCSDICE 2001, May 2001, Cagliari, Sardinia, Italy. ⟨hal-00152631⟩
Du matériau au composant : le modulateur électro-optique à ondes progressives
Didier Decoster, J.F. Larchanche, B. Bellini
Réunion finale CTI Polymères, 2001, Cachan, France. ⟨hal-00152541⟩
High performance AlGaN/GaN HEMTs on a resistive silicon substrate
Virginie Hoel, Y. Guhel, N. Vellas, Christophe Gaquière, Jean-Claude de Jaeger, Y. Cordier, F. Semond, F. Natali, J. Massies
11th European Heterostrucrure Technology Workshop, HETECH 01, 2001, Padova, Italy. ⟨hal-00152670⟩
ECR-silicon nitride passivation of III-V transistors
S. Shapoval, V. Gurtovoi, A. Kovalchuk, Christophe Gaquière
XXV Workshop on Compound Semiconductor Devices and Integrated Circuits held in Europe, WOCSDICE 2001, 2001, Cagliari, Sardinia, Italy. ⟨hal-00152674⟩
Detection of picosecond electrical pulses using the intrinsic Franz-Keldysh effect
Jean-Francois Lampin, L. Desplanque, F. Mollot
Applied Physics Letters, 2001, 78 (26), pp.4103-4105. ⟨10.1063/1.1381030⟩. ⟨hal-00018479⟩
Design and realization of sub-100nm gate length HEMTs
T. Parenty, S. Bollaert, J. Mateos, X. Wallart, A. Cappy
2001, pp.626-629. ⟨hal-00151761⟩
HEMTs capability for millimeter wave applications
S. Bollaert, Y. Cordier, M. Zaknoune, T. Parenty, H. Happy, A. Cappy
Annals of Telecommunications - annales des télécommunications, 2001, 56, pp.15-26. ⟨hal-00151764⟩
Low frequency noise conversion in FETs under nonlinear operation
Francois Danneville, B. Tamen, A. Cappy, J.B. Juraver, Olivier Llopis, Jacques Graffeuil
Fluctuation and Noise Letters, 2001, 1, pp.L189-L195. ⟨hal-00151766⟩