Publications
Affichage de 15471 à 15480 sur 16261
Investigation of FET's avalanche breakdown phenomenon by means of a 2 D hydrodynamic energy model
Michel Rousseau, M. El Khou, Jean-Claude de Jaeger
12th III-V Semiconductor Device Simulation Workshop, 2000, Duisburg, Germany. ⟨hal-00159028⟩
Time frequency analysis of impact-echo signals : numerical modelling and experimental validation
O. Abraham, C. Leonard, P. Cote, Bogdan Piwakowski
Materials Journal, 2000, 97, pp.645-657. ⟨hal-00250444⟩
Defect assisted tunneling current : a revised interpretation of scanning tunneling spectroscopy measurements
B. Grandidier, X. de La Broïse, D. Stievenard, C. Delerue, M. Lannoo, M. Stellmacher, J. Bourgoin
Applied Physics Letters, 2000, 76, pp.3142-3144. ⟨hal-00158642⟩
Surface roughness, strain and alloy segregation in lattice matched heteroepitaxy
C. Priester, G. Grenet
Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2000, 61, pp.16029-16032. ⟨hal-00158658⟩
Comparison between TiAl and TiAlNiAu ohmic contacts to n-type GaN
B. Boudart, S. Trassaert, X. Wallart, J.C. Pesant, O. Yaradou, D. Theron, Y. Crosnier, H. Lahreche, F. Omnes
Journal of Electronic Materials, 2000, 29, pp.603-606. ⟨hal-00158984⟩
Diagnosis of trapping phenomena in GaN MESFET's
G. Meneghesso, A. Chini, E. Zanoni, M. Manfredi, M. Pavesi, B. Boudart, Christophe Gaquière
2000, pp.389-392. ⟨hal-00159002⟩
Enhancement-mode metamorphic Al0.67In0.33As/Ga0.66In0.34 HEMT on GaAs substrate
Mustafa Boudrissa, Elisabet Delos, Yvon Cordier, Didier Theron, Jean-Claude de Jaeger
The Fourth International Conference of the Learning Sciences, Jun 2000, Ann Arbor, MI, United States. pp.IV-7, IV-8. ⟨hal-00159007⟩
Organisation et propriétés électroniques de monocouches d'alkylsiloxanes fonctionnalisées par des groupements conjugués
S. Lenfant, J. Collet, D. Vuillaume, A. Bouloussa, F. Rondelez, J. Gay, K. Kham, C. Chevrot
7èmes Journées de la Matière Condensée, 2000, Poitiers, France. ⟨hal-00158947⟩
Théorie du transport électronique d'une diode moléculaire à base de quinolinium tricyanoquinodimethanide
Christophe Krzeminski, Christophe Delerue, Dominique Vuillaume, Guy Allan
7èmes Journées de la Matière Condensée, 2000, Poitiers, France. ⟨hal-00158948⟩
Gate ionization current of an enhancement-mode metamorphic Al0.67In0.33As/Ga0.66In0.34As HEMT on GaAs substrate
Mustafa Boudrissa, Elisabet Delos, Yvon Cordier, Didier Theron, Jean-Claude de Jaeger
30th European Microwave Conferences, 2000, Paris, France. pp.90-93. ⟨hal-00159006⟩