Publications

Affichage de 15751 à 15760 sur 16261


  • Communication dans un congrès

RF power MISFET's using thin LT GaAs as a passivator

D. Theron, B. Boudart, Christophe Gaquière, Jean-Claude de Jaeger

Workshop on Compound Semiconductor Materials and Devices, WOCSEMMAD 2000, 2000, San Diego, CA, United States. ⟨hal-00159031⟩

  • Communication dans un congrès

Ohmic contacts studies on AlGaN/GaN HEMTs

Y. Guhel, B. Boudart, T. Heim, N. Grandjean, F. Omnes, Jean-Claude de Jaeger

10th European Workshop on Heterostructure Technology, HeTech 2000, 2000, Ulm, Germany. ⟨hal-00159035⟩

  • Communication dans un congrès

Acoustic wave phase conjugation in active media - Numerical simulations

A. Merlen, S. Ben-Khelil, Vladimir Preobrazhensky, Philippe Pernod

IUTAM Symposium on Diffraction and Scattering in Fluid Mechanics and Elasticity, 2000, United Kingdom. pp.133-140. ⟨hal-00250440⟩

  • Communication dans un congrès

Alloys effects in skutterudites compounds : theoretical calculations and experimental validations for CoSb3 and Fe0.5Ni0.5Sb3

M. Lassalle, I. Lefebvre-Devos, X. Wallart, J. Olivier-Fourcade, L. Monconduit

2000, pp.B-4. ⟨hal-00158949⟩

  • Article dans une revue

The electron beam induced reactivation of Si dopants in hydrogenated GaAs : a minority carrier generation effect or an energetic excitation effect ?

S. Silvestre, D. Bernard-Loridant, E. Constant, M. Constant, Jacques Chevallier

Applied Physics Letters, 2000, 20, pp.3206-3208. ⟨hal-00158582⟩

  • Communication dans un congrès

Systèmes moléculaires organisés, application aux nano-composants électroniques

Laurent Breuil, Dominique Vuillaume

7èmes Journées de la Matière Condensée, Aug 2000, Poitiers, France. ⟨hal-00158946⟩

  • Article dans une revue

Raman characterization of GaN synthetised by N implantation in GaAs substrate

B. Boudart, J.C. Pesant, Jean-Claude de Jaeger, P.A. Dhamelincourt

Journal of Raman Spectroscopy, 2000, 31, pp.615-618. ⟨hal-00158978⟩