Publications

• Communication dans un congrès

Ballistic emitter for InP heterojunction bipolar transistors

D. Sicault, S. Demichel, R. Teissier, C. Dupuis, F. Pardo, F. Mollot, J.L. Pelouard

25th International Conference on the Physics of Semiconductors, ICPS-25, 2000, Japan. pp.1781-1782. ⟨hal-00250435⟩

• Article dans une revue

Spatial mapping of electroluminescence due to impact ionization effect in high electron mobility transistors

Christophe Gaquière, B. Boudart, P.A. Dhamlincourt

Applied Spectroscopy, 2000, 54, pp.1423-1428. ⟨hal-00158981⟩

• Communication dans un congrès

Fast photodetection

Jean-Pierre Vilcot, Joseph Harari, M. Fendler, V. Magnin, Samuel Dupont, Didier Decoster

3rd European Microwave Week, Workshop on Microwave Optoelectronics, 2000, Paris, France. ⟨hal-00158617⟩

• Communication dans un congrès

Signal to noise ratio enhancement using heterojunction bipolar phototransistor by base current compensation

Samuel Dupont, M. Fendler, F. Jorge, Sophie Maricot, Jean-Pierre Vilcot, Didier Decoster

2000, pp.59-61. ⟨hal-00158601⟩

• Autre publication scientifique

Contribution à l'étude et à la réalisation d'une liaison mixte fibre radio bidirectionnelle haut débit intra-bâtiment à 60 GHz

Samuel Dupont

2000. ⟨hal-00158551⟩

• Autre publication scientifique

Contribution à la conception et à la réalisation de liaisons radio haut débit intra-bâtiment à 60 GHz

Christophe Loyez

2000. ⟨hal-00157903⟩

• Autre publication scientifique

Nouvelles architectures de sources stables programmables en gamme millimétrique et centimétrique

G. Lewandowski

2000. ⟨hal-00158127⟩

• Article dans une revue

Measurement of residual phase noise of frequency divider using a single divider technique

V. Brugidou, Paul-Alain Rolland

A new technique for measuring the residual phase noise of a frequency divider is proposed. The new technique enables one divider to be characterised whereas the traditional technique necessitates two dividers. Experimentation demonstrates the validity of the technique, which is quicker and more…

Electronics Letters, 2000, 36 (16), pp.1391-1393. ⟨10.1049/el:20000983⟩. ⟨hal-00158126⟩

• Article dans une revue

Dependence of the carrier lifetime on acceptor concentration in GaAs grown at low-temperature under different growth and annealing conditions

M. Stellmacher, J. Nagle, Jean-Francois Lampin, P. Santoro, J. Vaneecloo, Antigoni Alexandrou

Journal of Applied Physics, 2000, 88, pp.6026-6031. ⟨hal-00158228⟩

• Communication dans un congrès

Acoustic scattering in time domain using the boundary element method

A. Lavie, Bertrand Dubus, A. El Ghaouty

2000, pp.129-133. ⟨hal-00157820⟩