Publications

Affichage de 2881 à 2890 sur 16428


  • Article dans une revue

Molecular beam epitaxial growth of multilayer 2D-boron nitride on Ni substrates from borazine and plasma-activated nitrogen

Jawad Hadid, Ivy Colambo, Jose Avila, Aexandre Plaud, Christophe Boyaval, D. Deresmes, Nicolas Nuns, Pavel Dudin, Annick Loiseau, Julien Barjon, Xavier Wallart, Dominique Vignaud

2D boron nitride (2D-BN) was synthesized by gas-source molecular beam epitaxy on polycrystalline and monocrystalline Ni substrates using gaseous borazine and active nitrogen generated by a remote plasma source. The excess of nitrogen atoms allows to overcome the thickness self-limitation active on…

Nanotechnology, 2022, 34 (3), pp.035601. ⟨10.1088/1361-6528/ac99e5⟩. ⟨hal-03818640⟩

  • Article dans une revue

Temperature and Gate-Length Dependence of Subthreshold RF Detection in GaN HEMTs

Gaudencio Paz-Martínez, Ignacio Íñiguez-De-La-Torre, Héctor Sánchez-Martín, José Antonio Novoa-López, Virginie Hoel, Yvon Cordier, Javier Mateos, Tomás González

The responsivity of AlGaN/GaN high-electron mobility transistors (HEMTs) when operating as zero-bias RF detectors in the subthreshold regime exhibits different behaviors depending on the operating temperature and gate length of the transistors. We have characterized in temperature (8–400 K) the…

Sensors, 2022, 22 (4), pp.1515. ⟨10.3390/s22041515⟩. ⟨hal-03582713⟩