Publications

• Communication dans un congrès

Non-contact air-coupled velocity measurements in planar samples

Qiang Liu, Bogdan Piwakowski, Zoubeir Lafhaj

Non-contact air-coupled technique has been applied to measure ultrasonic velocities in two planar samples, Plexiglas and mortar. Longitudinal waves and mode-converted shear velocities were obtained by three approaches. The obtained velocities were compared with that measured by contact method. The…

13th International Symposium on Nondestructive Characterization of Materials, NDCM-XIII, 2013, Le Mans, France. paper 15527, 7 p. ⟨hal-00971601⟩

• Communication dans un congrès

Effect of electric bias field and pressure on PMN-PT piezoelectric single crystals in Tonpilz transducers

C. Granger, Anne-Christine Hladky, J.C. Debus, T. Pastureaud, M. Doisy, M. Pham Thi

3rd Joint IEEE International Symposium on the Applications of Ferroelectrics, ISAF 2013, Piezoresponse Force Microscopy and Nanoscale Phenomena in Polar Materials Workshop, PFM 2013, 2013, Prague, Czech Republic. ⟨hal-00934422⟩

• Article dans une revue

Multiple exciton generation and ultrafast exciton dynamics in HgTe colloidal quantum dots

Ali Al-Otaify, Stephen V. Kershaw, Shuchi Gupta, Andrey L. Rogach, Guy Allan, Christophe Delerue, David J. Binks

The investigation of sub-nanosecond exciton dynamics in HgTe colloidal quantum dots using ultrafast transient absorption spectroscopy is reported. The transmittance change spectrum acquired immediately after pumping is dominated by a bleach blue-shifted by ∼200–300 nm from the photoluminescent…

Physical Chemistry Chemical Physics, 2013, 15, pp.16864-16873. ⟨10.1039/C3CP52574K⟩. ⟨hal-00871970⟩

• Article dans une revue

Power performance at 40 GHz on quaternary barrier InAlGaN/GaN HEMT

François Lecourt, Alain Agboton, Nico Ketteniss, Hannes Behmenburg, N. Defrance, Virginie Hoel, Holger Kalisch, Andrei Vescan, Michael Heuken, Jean-Claude de Jaeger

Depletion-mode high-electron mobility transistors (HEMTs) based on a quaternary barrier In 0.11 Al 0.72 Ga 0.17 N/GaN heterostructure on sapphire substrate are fabricated and characterized. This structure shows a very high Hall electron mobility of 2200 cm 2 /V·s, which is the highest value ever…

IEEE Electron Device Letters, 2013, 34, pp.978-980. ⟨10.1109/LED.2013.2266123⟩. ⟨hal-00872022⟩

• Article dans une revue

Improvement of the oxidation interface in an AlGaAs/AlxOy waveguide structure by using a GaAs/AlAs superlattice

J.Y. Song, S. Bouchoule, G. Patriarche, E. Galopin, A.M. Yacomotti, E. Cambril, Q.G. Kou, David Troadec, J.J. He, J.C. Harmand

The wet oxidation from the mesa sidewalls of AlGaAs/GaAs epitaxial structures is investigated in details. In addition to the intended lateral oxidation of the Al-rich buried layer, we observe a parasitic vertical oxidation of the adjacent layers of lower Al content. This vertical oxidation produces…

Physica Status Solidi A (applications and materials science), 2013, 210, pp.1171-1177. ⟨10.1002/pssa.201228770⟩. ⟨hal-00872060⟩

• Article dans une revue

Revisited RF compact model of gate resistance suitable for high-K/metal gate technology

B. Dormieu, P. Scheer, C. Charbuillet, H. Jaouen, Francois Danneville

IEEE Transactions on Electron Devices, 2013, 60, pp.13-19. ⟨10.1109/TED.2012.2225146⟩. ⟨hal-00795950⟩

• Article dans une revue

Numerical and experimental assessment of charge control in III-V nano-metal-oxide-semiconductor field-effect transistor

Minghua Shi, J. Saint-Martin, A. Bournel, D. Querlioz, P. Dollfus, J.J. Mo, Nicolas Wichmann, L. Desplanque, X. Wallart, Francois Danneville, S. Bollaert

Journal of Nanoscience and Nanotechnology, 2013, 13, pp.771-775. ⟨10.1166/jnn.2013.6115⟩. ⟨hal-00795954⟩

• Communication dans un congrès

Modeling of surface acoustic wave scattering from the system of topographic irregularities comparable with the wavelength

Sergey Yankin

16èmes Journées Nationales du Réseau Doctoral en Micro-Nanoélectronique, JNRDM 2013, 2013, Grenoble, France. papier 196, 4 p. ⟨hal-00957777⟩

• Article dans une revue

Effect of antimony on structure strained quantum well laser

Abdelkader Aissat, Farid Ykhlef, Said Nacer, Jean-Pierre Vilcot

This work consists of highly strained quantum well GaxIn1-xNyAs1-y-zSbz quaternary structure modeling. We have studied the effect nitrogen and antimony incorporation into ternary semiconductor III-V alloys. We found that incorporating nitrogen in the structure leads to a splitting of the conduction…

Journal of Optoelectronics and Advanced Materials, 2013, 15, pp.1185-1187. ⟨hal-00922579⟩

• Communication dans un congrès

94-GHz load pull measurements of SiGe HBT by extracting output power density in W-band

Issam Hasnaoui, Elodie Canderle, Pascal Chevalier, Daniel Gloria, Christophe Gaquière

In this paper, we present a W-Band load pull test bench used to improve a characterization of Silicon Germanium Heterojunction Bipolar Transistor (SiGe HBT). High accuracy is obtained in Load-pull measurements at 94 GHz on lastgeneration SiGe HBTs by extracting the input reflection hot Sparameter (…

8th European Microwave Integrated Circuits Conference, EuMIC 2013, and 43rd European Microwave Conference, EuMC 2013, European Microwave Week 2013, 2013, Nuremberg, Germany. paper EuMC/EuMIC04-4, 400-403. ⟨hal-00922493⟩