Publications

• Communication dans un congrès

Ultrasound tests in a stirred vessel to evaluate the ability of dairy powders to reconstitute

Bruno Richard, Malika Toubal, Jean-Francois Le Page, Georges Nassar, Edouard Radziszewski, Bertrand Nongaillard, Pascal Debreyne, Pierre Schuck, Romain Jeantet, Guillaume Delaplace

This study demonstrated the feasibility of applying an ultrasound test to evaluate the ability of a powder to interact with a solvent and thus to predict the reconstitution behavior of powders. The ultrasound test consisted of using a probe immersed in a stirring tank to monitor the ultrasound…

5. International Symposium on Spray Dried Dairy Products, Jun 2012, Saint Malo, France. ⟨hal-01209386⟩

• Communication dans un congrès

Electro-elastic moduli and frequency dependence of KN single crystal

R Rouffaud, F. Levassort, M. Pham-Thi, E. Leveugle, Anne-Christine Hladky

— Functional properties of KNbO 3 single crystal are characterized. Large polydomain plates cutted from an as-grown KNbO 3 crystal (oriented along [001] c (45°-cut) direction) are used. At the fundamental resonance (10 MHz), thickness coupling factor is 65% and frequency dependence is measured with…

2012 Joint 21st IEEE ISAF / 11th IEEE ECAPD / IEEE PFM (ISAF/ECAPD/PFM), Jul 2012, Aveiro, Portugal. pp.1-4, ⟨10.1109/ISAF.2012.6297785⟩. ⟨hal-01705153⟩

• Article dans une revue

Tight-binding calculations of the optical properties of HgTe nanocrystals

Guy Allan, Christophe Delerue

We propose a tight-binding model of HgTe which gives an accurate band structure in a wide energy range compared to recent ab initio calculations. The inverted band structure near the Fermi level and its temperature dependence are also very well described. Using this parametrization, we study the…

Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2012, 86 (16), pp.165437. ⟨10.1103/PhysRevB.86.165437⟩. ⟨hal-00787874⟩

• Article dans une revue

Experimental evidence of zero-angle refraction and acoustic wave-phase control in a two-dimensional solid/solid phononic crystal

Jerome O. Vasseur, B. Morvan, A. Tinel, N. Swinteck, Anne-Christine Hladky, P.A. Deymier

The square symmetry of the equifrequency contour of longitudinal waves in a solid/solid two-dimensional phononic crystal (PC) is shown through numerical calculations and experiments to lead to peculiar propagation phenomena. A slab of steel/epoxy PC immersed in water refracts incident longitudinal…

Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2012, 86 (13), pp.134305. ⟨10.1103/PhysRevB.86.134305⟩. ⟨hal-00786894⟩

• Article dans une revue

Low-frequency noise in Schottky-barrier-based nanoscale field-effect transistors

N. Clement, G. Larrieu, Emmanuel Dubois

Investigation of low-frequency noise in nanoscale Schottky-barrier (SB)-based field-effect transistors (SB-FETs) is of prime importance due to its large amplitude in emerging bottom-up devices. In addition, noise can give additional information on charge transport mechanisms. In this paper, we…

IEEE Transactions on Electron Devices, 2012, 59 (1), pp.180-187. ⟨10.1109/TED.2011.2169676⟩. ⟨hal-00787365⟩

• Article dans une revue

Receiver-aided predistortion of power amplifier non-linearities in cellular networks

J. Zeleny, C. Dehos, P. Rosson, A. Kaiser

IET Science Measurement and Technology, 2012, 6, pp.168-175. ⟨10.1049/iet-smt.2011.0016⟩. ⟨hal-00787384⟩

• Article dans une revue

Supercritical dynamics of magnetoelastic wave triad in a solid

Vladimir Preobrazhensky, O. Yevstafyev, Philippe Pernod, Olivier Bou Matar, V. Berzhansky

Physics of Wave Phenomena, 2012, 20, pp.256-263. ⟨10.3103/S1541308X12040036⟩. ⟨hal-00787360⟩

• Article dans une revue

Polymer-based zero-level packaging technology for high frequency RF applications by wafer bonding/debonding technique using an anti-adhesion layer

J.G. Kim, S. Seok, N. Rolland, P.A. Rolland

International Journal of Precision Engineering and Manufacturing, 2012, 13, pp.1861-1867. ⟨10.1007/s12541-012-0244-7⟩. ⟨hal-00786960⟩

• Article dans une revue

The effect of gate length variation on InAlGaN/GaN HFET device characteristics

N. Ketteniss, H. Behmenburg, F. Lecourt, N. Defrance, Virginie Hoel, Jean-Claude de Jaeger, M. Heuken, H. Kalisch, A. Vescan

Semiconductor Science and Technology, 2012, 27, pp.035009-1-4. ⟨10.1088/0268-1242/27/3/035009⟩. ⟨hal-00788167⟩

• Article dans une revue

High power density performances of SiGe HBT from BiCMOS technology at W-band

A. Pottrain, T. Lacave, D. Ducatteau, D. Gloria, P. Chevalier, Christophe Gaquière

IEEE Electron Device Letters, 2012, 33, pp.182-184. ⟨10.1109/LED.2011.2177631⟩. ⟨hal-00788168⟩