Publications

• Article dans une revue

Magnetic and electric coupling effects of dielectric metamaterial

F. Zhang, L. Kang, Q. Zhao, J. Zhou, D. Lippens

New Journal of Physics, 2012, 14, pp.033031-1-15. ⟨10.1088/1367-2630/14/3/033031⟩. ⟨hal-00786984⟩

• Article dans une revue

Strain relief and growth optimization of GaSb on GaP by molecular beam epitaxy

Y. Wang, P. Ruterana, Jie Chen, L. Desplanque, S. El Kazzi, X. Wallart

Journal of Physics: Condensed Matter, 2012, 24, pp.335802-1-7. ⟨10.1088/0953-8984/24/33/335802⟩. ⟨hal-00787023⟩

• Article dans une revue

Growth mode dependence of misfit dislocation configuration at lattice mismatched III-V semiconductor interfaces

Y. Wang, P. Ruterana, L. Desplanque, S. El Kazzi, X. Wallart

EPL - Europhysics Letters, 2012, 97, pp.68011-1-6. ⟨10.1209/0295-5075/97/68011⟩. ⟨hal-00786985⟩

• Article dans une revue

480-GHz fmax in InP/GaAsSb/InP DHBT with new base isolation µ-airbridge design

M. Zaknoune, E. Mairiaux, Yannick Roelens, N. Waldhoff, U. Rouchy, P. Frijlink, M. Rocchi, H. Maher

IEEE Electron Device Letters, 2012, 33, pp.1381-1383. ⟨10.1109/LED.2012.2210187⟩. ⟨hal-00786893⟩

• Article dans une revue

A 10 Gb/s 45 mW adaptive 60 GHz baseband in 65 nm CMOS

C. Thakkar, L. Kong, K. Jung, A. Frappe, E. Alon

IEEE Journal of Solid-State Circuits, 2012, 47, pp.952-968. ⟨10.1109/JSSC.2012.2184651⟩. ⟨hal-00787383⟩

• Article dans une revue

Electromechanical transconductance properties of a GaN MEMS resonator with fully integrated HEMT transducers

M. Faucher, Y. Cordier, M. Werquin, L. Buchaillot, Christophe Gaquière, D. Theron

Journal of Microelectromechanical Systems, 2012, 21, pp.370-378. ⟨10.1109/JMEMS.2011.2179010⟩. ⟨hal-00787408⟩

• Thèse

Contribution au développement de microcomposants pour la caractérisation ultrasonore en canal microfluidique sur silicium : modélisation de la propagation, Development of microcomponents for ultrasonic characterization in silicon based microchannel : propagation modeling

Assane Ndieguene

Les recherches menées pour le développement des microsystèmes ont permis d’améliorer considérablement la miniaturisation de certaines fonctions. Ces travaux, très multidisciplinaires, ont conduit à de nombreuses applications dans les domaines des télécommunications, de la chimie et de la biologie.…, The research activities for the development of microsystems enabled the downsizing of many functions. These multidisciplinary works concerns many applications in the fields of telecommunications, chemistry, and biology. In that context, our work concerned the conception and analyses of acoustical…

Micro et nanotechnologies/Microélectronique. Université de Valenciennes et du Hainaut-Cambrésis, 2011. Français. ⟨NNT : 2011VALE0033⟩. ⟨tel-03416217⟩

• Article dans une revue

Level repulsion and evanescent waves in sonic crystals

V. Romero-Garcia, Jerome O. Vasseur, Anne-Christine Hladky, Lluis Miquel Garcia-Raffi, J.V. Sanchez-Perez

This work theoretically and experimentally reports the evanescent connections between propagating bands in periodic acoustic materials. The complex band structures obtained by solving for the k(ω) problem reveal a complete interpretation of the propagation properties of these systems. The…

Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2011, 84, pp.212302-1-4. ⟨10.1103/PhysRevB.84.212302⟩. ⟨hal-00783380⟩

• Communication dans un congrès

The transverse electromagnetic horn antenna as an efficient THz pulse emitter

Jean-Francois Lampin, Emilien Peytavit, Tahsin Akalin, Guillaume Ducournau, Jens Klier, Sabine Wohnsiedler, Joachim Jonuscheit, René Beigang

We have fabricated a new photoconductive antenna based on a transverse electromagnetic horn and low temperature grown GaAs. It has been tested with a time-domain terahertz setup. The horn was used as the emitter and a standard dipole photoconductive antenna was used as the receiver. The spectrum…

International Conference on Infrared, Millimeter and THz Waves, IRMMW-THz 2011, Oct 2011, Houston, TX, United States. paper Tu3D.2, 1-2, ⟨10.1109/irmmw-THz.2011.6105067⟩. ⟨hal-00800486⟩

• Communication dans un congrès

A 300 GHz InP/GaAsSb/InP HBT for high data rate applications

Maher, Hassan, Vincent Delmouly, U. Rouchy, Michel Renvoisé, Peter Frijlink, Derek Smith, M. Zaknoune, Damien Ducatteau, Vanessa Avramovic, André Scavennec, Jean Godin, Muriel Riet, Cristell Maneux, Bertrand Ardouin

In this paper, a fully passivated InP/GaAsSb/InP DHBT on InP substrate with excellent DC and RF performance is developed. The epi-layers are grown by the MOCVD technique, with a base layer of 25nm and a collector layer of 130nm. The emitter width of the transistor is 0.35μm and the base contact is…

Conference Proceedings - International Conference on Indium Phosphide and Related Materials, Dec 2011, Berlin, Germany. pp.Art n°68. ⟨hal-00671674⟩