Publications

• Article dans une revue

Compliance at the GaSb/GaP interface by misfit dislocations array

S. El Kazzi, L. Desplanque, Christophe Coinon, Y. Wang, P. Ruterana, X. Wallart

Advanced Materials Research, 2011, 324, pp.85-88. ⟨10.4028/www.scientific.net/AMR.324.85⟩. ⟨hal-00795909⟩

• Article dans une revue

Thermal characterization of MBE-grown GaN/AlGaN/GaN device on single crystalline diamond

J. Kuzmik, S. Bychikhin, D. Pogany, E. Pichonat, O. Lancry, Christophe Gaquière, G. Tsiakatouras, G. Deligeorgis, A. Georgakilas

Self-heating effects in a molecular beam epitaxy-grown GaN/AlGaN/GaN structure on a single crystalline diamond is investigated. A transient interferometric method, in combination with a three dimensional model, is used to describe a pulsed operation of a transistor-like heater, and a micro-Raman…

Journal of Applied Physics, 2011, 109 (8), pp.086106. ⟨10.1063/1.3581032⟩. ⟨hal-00591315⟩

• Article dans une revue

Dielectric dispersion of BaSrTiO3 thin film from centimeter to submillimeter wavelengths

Grégory Houzet, Karine Blary, Sylvie Lepilliet, Didier Lippens, Ludovic Burgnies, Gabriel Vélu, Jean-Claude Carru, Edwin Nguema Agnandji, Patrick Mounaix

The dielectric dispersion of ferroelectric BaxSr1-xTiO3 (BST) thin film in a paraelectric phase was characterized from centimeter to submillimeter wavelengths. To this aim, interdigitated capacitors were patterned on a micrometer scale onto a BST layer with a barium concentration of 0.5 and were…

Journal of Applied Physics, 2011, 109 (1), pp.014116. ⟨10.1063/1.3531534⟩. ⟨hal-00572636⟩

• Article dans une revue

Electrical characterization of (Ni/Au)/Al0.25Ga0.75N/GaN/SiC Schottky barrier diode

S. Saadaoui, M.M. Ben Salem, M. Gassoumi, H. Maaref, Christophe Gaquière

In this work we report on the characteristics of a (Ni/Au)/AlGaN/GaN/SiC Schottky barrier diode (SBD). A variety of electrical techniques, such as gate current-voltage (I-V), capacitance-voltage (C-V), and deep level transient spectroscopy (DLTS) measurements have been used to characterize the…

Journal of Applied Physics, 2011, 110 (1), pp.013701-1-6. ⟨10.1063/1.3600229⟩. ⟨hal-00639910⟩

• Article dans une revue

Negative refraction of elastic waves in 2D phononic crystals : contribution of resonant transmissions to the construction of the image of a point source

Anne-Christine Hladky, Charles Croënne, Bertrand Dubus, Jerome O. Vasseur, L. Haumesser, D. Manga, B. Morvan

Negative refraction properties of a two-dimensional phononic crystal (PC), made of a triangular lattice of steel rods embedded in epoxy are investigated both experimentally and numerically. First, experiments have been carried out on a prism shaped PC immersed in water. Then, for focusing purposes…

AIP Advances, 2011, 1 (4), pp.0414054. ⟨10.1063/1.3676177⟩. ⟨hal-00783381⟩

• Article dans une revue

Microwave performance of 100 nm-gate In0.53Ga0.47As/In0.52Al0.48As high electron mobility transistors on plastic flexible substrate

J. Shi, Nicolas Wichmann, Yannick Roelens, S. Bollaert

Applied Physics Letters, 2011, 99, pp.203505-1-3. ⟨10.1063/1.3663533⟩. ⟨hal-00783377⟩

• Article dans une revue

Demonstration of low leakage current and high polarization in ultrathin AlN/GaN high electron mobility transistors grown on silicon substrate

F Medjdoub, Malek Zegaoui, N. Rolland, Paul-Alain Rolland

High quality AlN/GaN heterostructures grown on silicon substrate are demonstrated. It is found that high carrier concentration can be achieved whereas circular diodes showed a low leakage current up to 200 V reverse bias. 200 nm gate length AlN/GaN transistors exhibited a drain current density of 1…

Applied Physics Letters, 2011, 98 (22), pp.223502-1-3. ⟨10.1063/1.3595943⟩. ⟨hal-00603008⟩

• Communication dans un congrès

High RF performance of AlGaN/GaN HEMT on (110)-oriented silicon substrate

J.C. Gerbedoen, A. Soltani, Y. Cordier, Jean-Claude de Jaeger

20th European Workshop on Heterostructure Technology, HeTech 2011, 2011, Villeneuve d'Ascq, France. pp.1-2. ⟨hal-00800113⟩

• Communication dans un congrès

Silicon high frequency test structures improvement for millimeter wave varactors characterization, optimization and modeling

F. Sonnerat, R. Debroucke, Y. Morandini, D. Gloria, Jean-Daniel Arnould, Christophe Gaquière

24th IEEE International Conference on Microelectronic Test Structures, ICMTS 2011, 2011, Amsterdam, Netherlands. pp.101-104, ⟨10.1109/ICMTS.2011.5976868⟩. ⟨hal-00800125⟩

• Communication dans un congrès

Three-dimension localization method based on time difference of arrival for ultra wide band

Kobenan Ignace Kossonou, Yassin El Hillali, Michael Bocquet, Jamal Assaad, Atika Rivenq, I. Doumbia

2nd International Conference on Indoor Positioning and Indoor Navigation, IPIN 2011, 2011, Guimarães, Portugal. pp.1-4. ⟨hal-00800228⟩